Visually undistorted thin film electronic devices

1. A method for producing a thin-film electronic device, the method comprising:

opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, wherein the stack of thin film material layers comprise at least one active semiconductor layer, wherein the active region comprises a non-scribed area of the stack of thin film material layers, wherein the inactive region comprises a region of the stack of thin film material layers where thin film material was removed by the scribe;

depositing at least one scribe fill material into a gap opened by the scribe, wherein the at least one scribe fill material comprises an electrically conducting material and an electrically insulating material, wherein the at least one scribe fill material has embedded therein one or more coloring elements, wherein the one or more coloring elements cause an optical characteristics spectrum of the inactive region to match within a minimum perceptible difference for an industry defined standard observer of an optical characteristics spectrum of the active region;

wherein depositing the at least one scribe fill material comprises fabricating at least a portion of an electrical monolithic interconnect.

2. The method of claim 1 , further comprising:

determining an intensity spectrum for a plurality of coloring element input samples;

determining an intensity spectrum for the thin film material removed from the stack of thin film material layers;

determining ratios of the plurality of coloring element input samples to produce a scribe fill material ink, wherein the ratios provide a best fit estimate of the intensity spectrum for the thin film material removed from the stack of thin film material layers; and

adjusting an overall concentration of the plurality of coloring elements present in the scribe fill material ink based on a target film thickness;

wherein depositing the at least one scribe fill material into the gap comprises depositing the scribe fill material ink.

3. The method of claim 1 , wherein the optical characteristics spectrum of the inactive region obtains the optical characteristics spectrum of the active region within a ΔE2000<3.

4. The method of claim 1 , wherein the substrate is either ransparent or opaque with respect to visible light.

5. The method of claim 1 , further comprising:

applying a post deposition process after depositing the at least one scribe fill material, wherein the post deposition process cause changes to the spectral qualities of the scribe fill material to obtain the minimum perceptible difference for an industry defined standard observer of an optical characteristics spectrum of the active region.

6. The method of claim 1 , further comprising:

determining a baseline optical characteristics spectrum for the stack of thin film material layers in the active region;

determining an optical characteristics spectrum for thin film material remaining in the inactive region prior to depositing the at least one scribe fill material into the gap opened by the scribe;

determining a difference between the baseline optical characteristics spectrum and the optical characteristics spectrum for the thin film material remaining in the inactive region; and

selecting the one or more coloring elements as a function of the difference.

7. The method of claim 6 , wherein the one or more coloring elements are selected in ratios that drive an optical characteristics spectrum of the scribe fill material to obtain an optical characteristics spectrum of the material removed by opening the scribe.

8. The method of claim 1 wherein, the one or more coloring elements comprises a sample of a same semiconductor material as comprised in the at least one active semiconductor layer.

9. The method of claim 1 , wherein the at least one scribe fill eria comprises a ceramic.

10. The method of claim 1 , further comprising:

fabricating at least a portion of an edge isolation seal.

11. The method of claim 1 , wherein the at least one active semiconductor layer comprises an organic photovoltaic semiconductor absorber layer.

12. A method for producing a thin-film electronic device, the method comprising:

opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, wherein the stack of thin film material layers comprise at least one active semiconductor layer, wherein the active region comprises a non-scribed area of the stack of thin film material layers, wherein the inactive region comprises a region of the stack of thin film material layers where thin film material was removed by the scribe;

depositing to a target film thickness at least one scribe fill material that includes a scribe fill material ink into a gap opened by the scribe, wherein the scribe fill material has embedded therein one or more coloring elements, wherein the one or more coloring elements cause an optical characteristics spectrum of the inactive region to match within a minimum perceptible difference for an industry defined standard observer of an optical characteristics spectrum of the active region;

wherein the one or more coloring elements were selected prior to depositing the at least one scribe fill material based on:

determining an intensity spectrum for a plurality of coloring element input samples;

determining an intensity spectrum for the thin film material removed from the stack of thin film material layers;

determining ratios of the plurality of coloring element input samples to produce the scribe fill material ink, wherein the ratios provide a best fit estimate of the intensity spectrum for the thin film material removed from the stack of thin film material layers; and

adjusting an overall concentration of the plurality of coloring elements present in the scribe till material ink based on the target film thickness.

13. A method for producing a thin-film electronic device, the method comprising:

opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, wherein the stack of thin film material layers comprise at least one active semiconductor layer, wherein the active region comprises a non-scribed area of the stack of thin film material layers, wherein the inactive region comprises a region of the stack of thin film material layers where thin film material was removed by the scribe:

depositing at least one scribe fill material into a gap opened by the scribe, wherein the at least one scribe fill material has embedded therein the one or more coloring elements, wherein the one or more coloring elements cause an optical characteristics spectrum of the inactive region to match within a minimum perceptible difference for an industry defined standard observer of an optical characteristics spectrum of the active region;

wherein the one or more coloring elements were selected prior to depositing the at least one scribe till material based on:

determining a baseline optical characteristics spectrum for the stack of thin film material lavers in the active region;

determining an optical characteristics spectrum for thin film material remaining in the inactive region;

determining a difference between the baseline optical characteristics spectrum and the optical characteristics spectrum for the thin film material remaining in the inactive region; and

selecting the one or more coloring elements as a function of the difference.

14. The method of claim 13 , wherein the one or more coloring elements are selected in ratios that drive an optical characteristics spectrum of the scribe fill material to obtain an optical characteristics spectrum of the material removed by opening the scribe.