Solid-state imaging device and electronic apparatus including a photoelectric conversion unit disposed between another photoelectric conversion unit and a photoelectric conversion film
A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.
1. An imaging device, comprising:
a photoelectric conversion film;
a light shielding film disposed below the photoelectric conversion film; and
a semiconductor substrate disposed below the light shielding film,
wherein the semiconductor substrate has a first surface and a second surface opposite the first surface,
wherein the first surface is between the light shielding film and the second surface,
wherein the semiconductor substrate comprises:
a floating diffusion unit disposed at the second surface; and
a region overlapping the light shielding film in a plan view, and
wherein a charge photoelectrically converted in the photoelectric conversion film is configured to be transferred to the floating diffusion unit via at least the light shielding film and a part of the region.
2. The imaging device according to claim 1 , wherein the region comprises a charge accumulation unit and wherein the charge photoelectrically converted in the photoelectric conversion film is configured to accumulate in the charge accumulation unit before transfer to the floating diffusion unit.
3. The imaging device according to claim 2 , wherein the charge photoelectrically converted in the photoelectric conversion film is configured to be transferred to the charge accumulation unit via the light shielding film.
4. The imaging device according to claim 1 , wherein the semiconductor substrate further comprises a first photoelectric conversion layer, the first photoelectric conversion layer overlapping the photoelectric conversion film in a plan view.
5. The imaging device according to claim 4 , wherein the photoelectric conversion film photoelectrically converts light with a first spectrum and wherein the first photoelectric conversion layer photoelectrically converts light with a second spectrum which is different from the first spectrum.
6. The imaging device according to claim 4 , wherein the semiconductor substrate further comprises a second photoelectric conversion layer disposed between the first photoelectric conversion layer and one of the first surface and the second surface.
7. The imaging device according to claim 1 , wherein the first surface is a light incident surface of the semiconductor substrate.
8. The imaging device according to claim 1 , further comprising:
a first electrode above the photoelectric conversion film; and
a second electrode disposed below the photoelectric conversion film,
wherein the second electrode is disposed between the photoelectric conversion film and the light shielding film.
9. The imaging device according to claim 1 , wherein the light shielding film is a wiring.
10. The imaging device according to claim 1 , wherein the light shielding film comprises a conductive material.
11. The imaging device according to claim 1 , wherein the light shielding film comprises titanium.
12. The imaging device according to claim 1 , wherein the light shielding film comprises titanium nitride.
13. The imaging device according to claim 1 , wherein the light shielding film comprises tungsten.
14. The imaging device according to claim 1 , wherein the light shielding film is electrically connected to the semiconductor substrate.
15. The imaging device according to claim 1 , further comprising a wiring layer disposed below the semiconductor substrate, wherein the second surface is between the wiring layer and the first surface.
16. The imaging device according to claim 1 , wherein a plane area of the light shielding film is larger than a plane area of the region in a plan view.
17. The imaging device according to claim 1 , wherein the light shielding film is configured to shield the region from incident light.
18. An electronic apparatus, comprising:
an imaging device according to claim 1 ;
an optical system; and
a digital signal processing circuit.