Semiconductor optical device and optical transceiver module
The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 μm or more.
1. A semiconductor optical device in a mesa stripe type, comprising:
a semiconductor substrate with a projection in a stripe shape extending in a first direction,
the projection constituting at least a lower edge portion of a mesa stripe structure;
a quantum well layer in the stripe shape extending in the first direction and on the projection,
the quantum well layer constituting a part of the mesa stripe structure; and
a buried layer, adjacent to both sides of the mesa stripe structure in a second direction perpendicular to the first direction, on an upper surface of the semiconductor substrate,
the buried layer constituting a buried heterostructure,
wherein:
the upper surface of the semiconductor substrate has a first slope descending from the projection in the second direction at an angle of 0-12° respective to a horizontal plane,
the mesa stripe structure has an inclined surface with a second slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° respective to the horizontal plane,
the mesa stripe structure has an upright surface rising from the inclined surface at an angle of 85-95° respective to the horizontal plane,
the buried layer is made from a semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface,
a height of the inclined surface is 80% or less of a height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer,
the height of the inclined surface is 0.3 μm or more, and
an area of the mesa stripe structure defined by a plane of the upper surface of the semiconductor substrate, a plane of the inclined surface, and a plane of the upright surface is recrystallized structure.
2. The semiconductor optical device according to claim 1 , wherein the quantum well layer is a multiple quantum well layer that includes a barrier layer between two adjacent quantum well layers.
3. The semiconductor optical device according to claim 1 , wherein a surface the projection includes an entirety of the inclined surface.
4. The semiconductor optical device according to claim 3 , wherein the surface of the projection further includes an edge portion of the upright surface.
5. The semiconductor optical device according to claim 1 , wherein:
the mesa stripe structure includes a clad layer in the stripe shape extending in the first direction on the quantum well layer, and
the clad layer is made from semiconductor with zinc doped therein.
6. The semiconductor optical device according to claim 1 , wherein the mesa stripe structure is a first mesa stripe structure and the quantum well layer is an active layer for constituting a semiconductor laser,
wherein the semiconductor optical device further comprises:
a second mesa stripe structure comprising a quantum well layer that is an absorption layer for constituting a modulator, and
wherein the semiconductor optical device is configured to be a modulator-integrated laser where the semiconductor laser and the modulator are monolithically integrated.
7. An optical transceiver module, comprising:
a transmitter optical subassembly for outputting optical signals converted from input electric signals; and
a receiver optical subassembly for outputting electric signals converted from input optical signals,
wherein the transmitter optical subassembly comprises a semiconductor optical device comprising:
a semiconductor substrate with a projection in a stripe shape extending in a first direction,
the projection constituting at least a first portion of a mesa stripe structure;
a quantum well layer in the stripe shape extending in the first direction and on the projection,
the quantum well layer constituting a second portion of the mesa stripe structure; and
a buried layer, adjacent to both sides of the mesa stripe structure in a second direction perpendicular to the first direction, on an upper surface of the semiconductor substrate,
wherein:
the upper surface of the semiconductor substrate has a first slope descending from the projection in the second direction at an angle of 0-12° respective to a horizontal plane,
the mesa stripe structure has an inclined surface with a second slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° respective to the horizontal plane,
the mesa stripe structure has an upright surface rising from the inclined surface at an angle of 85-95° respective to the horizontal plane,
the buried layer is made from a semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface,
a height of the inclined surface is 80% or less of a height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer,
the height of the inclined surface is 0.3 μm or more, and
an area of the mesa stripe structure defined by a plane of the upper surface of the semiconductor substrate, a plane of the inclined surface, and a plane of the upright surface is recrystallized structure.
8. The optical transceiver module according to claim 7 , wherein the quantum well layer is a multiple quantum well layer that includes a barrier layer between an adjacent pair of quantum well layers.
9. The optical transceiver module according to claim 7 , wherein a surface of the projection includes an entirety of the inclined surface.
10. The optical transceiver module according to claim 9 , wherein the surface of the projection further includes an edge portion of the upright surface.
11. The optical transceiver module according to claim 7 , wherein the mesa stripe structure includes a clad layer on the quantum well layer.
12. The optical transceiver module according to claim 7 , wherein the mesa stripe structure includes a first mesa stripe structure and the quantum well layer is an active layer for constituting a semiconductor laser,
wherein the semiconductor optical device further comprises:
a second mesa stripe structure comprising an absorption layer for constituting a modulator,
wherein the semiconductor laser and the modulator are monolithically integrated.
13. A method of manufacturing a semiconductor optical device, comprising:
forming a mesa stripe structure, the mesa stripe structure comprising:
a projection extending from a semiconductor substrate in a first direction,
wherein an upper surface of the semiconductor substrate has a first slope descending from the projection at an angle of 0-12° respective to a horizontal plane, and
a quantum well layer extending in the first direction and on the projection,
wherein the mesa stripe structure has an upright surface at an angle of 85-95° respective to the horizontal plane;
forming an inclined surface, of the mesa stripe structure, with a second slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° respective to the horizontal plane,
wherein an area of the mesa stripe structure defined by a plane of the upper surface of the semiconductor substrate, a plane of the inclined surface, and a plane of the upright surface is recrystallized structure; and
forming a buried layer, adjacent to both sides of the mesa stripe structure in a second direction perpendicular to the first direction, on the upper surface of the semiconductor substrate,
wherein the buried layer is in contact with the inclined surface and the upright surface.
14. The method according to claim 13 , wherein forming the inclined surface comprises:
providing a heat treatment until:
a height of the inclined surface is 80% or less of a height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer, and
the height of the inclined surface is 0.3 μm or more.
15. The method according to claim 13 , wherein forming the quantum well layer comprises:
forming a multiple quantum well layer including a barrier layer between an adjacent pair of quantum well layers.
16. The method according to claim 13 , wherein a height of the buried layer is higher than a height of the mesa stripe structure.
17. The method according to claim 13 , further comprising:
forming an isolation trench in the semiconductor optical device to electrically insulate a contact layer of the mesa stripe structure.
18. The method according to claim 17 , further comprising:
forming, based on forming the isolation trench, a passivation film; and
forming an insulating film to reduce parasitic capacitance.
19. The method according to claim 13 , wherein the mesa stripe structure includes a clad layer extending in the first direction on the quantum well layer.
20. The method according to claim 13 , wherein the mesa stripe structure includes a first mesa stripe structure and the quantum well layer is an active layer for constituting a semiconductor laser,
wherein the semiconductor optical device further comprises:
a second mesa stripe structure where the quantum well layer is an absorption layer for constituting a modulator,
wherein the semiconductor laser and the modulator are monolithically integrated.