IP Library Granted Patent US 11,261,375
Granted Patent B2
US 11,261,375 · App. 16/419,206 · Granted Mar 1, 2022

Method to enhance phosphor robustness and dispersability and resulting phosphors

Inventors: Matthew David Butts (Rexford, NY); James Edward Murphy (Niskayuna, NY); Mark Daniel Doherty (Niskayuna, NY)
Assignee: General Electric Company
C09K11/617C09K11/02G02B6/005G02B6/0026H01L33/502H01L33/507
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Quick Facts
Patent No.
US 11,261,375
App. No.
16/419,206
Granted
Mar 1, 2022
Kind
B2
Abstract

Briefly, in one aspect, the present invention relates to processes for producing a stabilized Mn 4+ doped phosphor in solid form and a composition containing such doped phosphor. Such process may include combining a) a solution comprising at least one substance selected from the group consisting of: K 2 HPO 4 , an aluminum phosphate, oxalic acid, phosphoric acid, a surfactant, a chelating agent, or a combination thereof, with b) a Mn 4+ doped phosphor of formula I in solid form, where formula I may be: A x [MF y ]:Mn 4+ . The process can further include isolating the stabilized Mn 4+ doped phosphor in solid form. In formula I, A may be Li, Na, K, Rb, Cs, or a combination thereof. In formula I, M may be Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof. In formula I, x is the absolute value of the charge of the [MF y ] ion and y is 5, 6 or 7.

Claims (50)

1. A process comprising combining a) a solution comprising at least one substance selected from the group consisting of: K 2 HPO 4 , an aluminum phosphate, oxalic acid, or a combination thereof, and optionally, a surfactant or a chelating agent, with b) a Mn 4+ doped phosphor of formula I in solid form;

A x [MF y ]:Mn 4+   I

and isolating a stabilized Mn 4+ doped phosphor in solid form; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF y ] ion; y is 5, 6 or 7.

2. The process according to claim 1 , further comprising, prior to combining with the at least one substance, contacting the Mn 4+ doped phosphor of formula I with a fluorine-containing oxidizing agent in gaseous form at an elevated temperature, to form a product phosphor.

3. The process according to claim 1 , wherein M is Si, Ge, Ti, or a combination thereof; A is Na, K, or a combination thereof.

4. The process according to claim 1 , wherein the phosphor of formula I is K 2 SiF 6 :Mn 4+ .

5. The process according to claim 1 , wherein the at least one substance comprises K 2 HPO 4 .

6. The process according to claim 1 , wherein the at least one substance comprises the surfactant and K 2 HPO 4 .

7. The process according to claim 1 , wherein the solution is aqueous and additionally comprises H 2 O 2 .

8. The process according to claim 1 , wherein the solution additionally comprises at least one solvent selected from the group consisting of: 1-octadecene, isonorbornyl acrylate, water, and propylene glycol monomethyl ether acetate.

9. The process according to claim 6 , wherein the surfactant comprises at least one selected from the group consisting of: polyoxyethylene octyl phenyl ether, potassium oleate, polyoxyethylene-polyoxypropylene block copolymer; polyoxyethylene (20) sorbitan monolaurate, poly(acrylic acid sodium salt), and potassium sorbate.

10. A process comprising combining a) a solution comprising at least one substance selected from the group consisting of: K 2 HPO 4 , an aluminum phosphate, oxalic acid, phosphoric acid, or a combination thereof, and optionally, a surfactant or a chelating agent, with b) a Mn 4+ doped phosphor of formula I in solid form:

A x [MF y ]:Mn 4+   I

and isolating a stabilized Mn 4+ doped phosphor in solid form: wherein A is Li, Na, K, Rb, Cs, or a combination thereof: M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof: x is the absolute value of the charge of the [MF y ] ion: y is 5, 6 or 7,

wherein the Mn 4+ doped phosphor of formula I comprises a core comprising a phosphor of formula I and a manganese-free composite coating disposed on the core, the manganese-free composite coating comprising a compound of formula III and a metal fluoride selected from the group consisting of calcium fluoride, strontium fluoride, magnesium fluoride, yttrium fluoride, scandium fluoride, lanthanum fluoride, and combinations thereof,

A 1 x [M 1 F y ]  (III)

wherein A 1 is H, Li, Na, K, Rb, Cs, or a combination thereof; M 1 is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [M 1 F y ] ion; and y is 5, 6 or 7.

11. A composition comprising a) at least one substance selected from the group consisting of: K 2 HPO 4 , an aluminum phosphate, oxalic acid, or a combination thereof, and b) a Mn 4+ doped phosphor of formula I;

A x [MF y ]:Mn 4+   I

wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF y ] ion; y is 5, 6 or 7.

12. The composition according to claim 11 , wherein M is Si, Ge, Ti, or a combination thereof; A is Na, K, or a combination thereof.

13. The composition according to claim 11 , wherein the phosphor of formula I is K 2 SiF 6 :Mn 4+ .

14. The composition according to claim 11 , wherein the at least one substance comprises K 2 HPO 4 and magnesium fluoride.

15. A composition comprising a) at least one substance selected from the group consisting of: K 2 HPO 4 , an aluminum phosphate, oxalic acid, phosphoric acid, or a combination thereof, and b) a Mn 4+ doped phosphor of formula I;

A x [MF y ]:Mn 4+   I

wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF y ] ion; y is 5, 6 or 7,

wherein the Mn 4+ doped phosphor of formula I comprises a core comprising a phosphor of formula I and a manganese-free composite coating disposed on the core, the manganese-free composite coating comprising a compound of formula III and a metal fluoride selected from the group consisting of calcium fluoride, strontium fluoride, magnesium fluoride, yttrium fluoride, scandium fluoride, lanthanum fluoride, and combinations thereof,

A 1 x [M 1 F y ]  (III)

wherein A 1 is H, Li, Na, K, Rb, Cs, or a combination thereof; M 1 is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [M 1 F y ] ion; and y is 5, 6 or 7.

16. A display device comprising a stabilized Mn 4+ doped phosphor produced by the process according to claim 1 .

17. The display device according to claim 16 , wherein the display device comprises a television, a computer monitor, a cellular or conventional phone, a digital photo frame, a tablet, an automotive display, an e-book reader, an electronic dictionary, a digital camera, an electronic keyboard, or a gaming device.

18. A lighting apparatus comprising a stabilized Mn 4+ doped phosphor produced by the process according to claim 1 .

19. A phosphor composition comprising phosphor particles and comprising, on surfaces of the phosphor particles, at least one surface composition selected from the group consisting of: 1) a composition comprising a phosphorus-containing moiety and a carbon-containing moiety; 2) a composition comprising the phosphorus-containing moiety and a metal fluoride; 3) a composition comprising the phosphorus-containing moiety and the carbon-containing moiety and the metal fluoride; and 4) a composition comprising the phosphorus-containing moiety free of an alkyl phosphate compound, wherein the phosphor particles comprise a Mn 4+ doped phosphor of formula I;

A x [MF y ]:Mn 4+   I

wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF y ] ion; y is 5, 6 or 7, and

wherein a D 50 particle size of the phosphor particles before sonication of a suspension containing the particles is no greater than 30 μm and the D 50 particle size of the phosphor particles after sonication is no greater than 20 μm.

20. The phosphor composition according to claim 19 , wherein the metal fluoride comprises magnesium fluoride.

21. The phosphor composition according to claim 19 , wherein the phosphorus-containing moiety comprises a phosphate moiety.

22. The phosphor composition according to claim 19 , wherein the carbon-containing moiety comprises at least one selected from the group consisting of: ethylenediaminetetraacetic acid, polyoxyethylene octyl phenyl ether, potassium oleate, polyoxyethylene-polyoxypropylene block copolymer, polyoxyethylene (20) sorbitan monolaurate, poly(acrylic acid sodium salt), potassium sorbate, and derivatives or salts thereof.

23. The phosphor composition according to claim 19 , wherein the phosphor particles exhibit A) a quantum efficiency after exposure to liquid water for one hour at room temperature that is 50% to 100% of the quantum efficiency exhibited before water exposure or B) a quantum efficiency loss upon exposure to 85% relative humidity at 85 deg C. for 100 hours that is less than 40%.

24. A display device comprising the phosphor composition according to claim 19 .

25. A light emitting diode device being radiationally coupled to and/or comprising the phosphor composition according to claim 19 .

26. The light emitting diode device according to claim 25 , wherein the light emitting diode device is a mini LED or a micro LED.

27. The light emitting diode device according to claim 25 , wherein a) the light emitting diode device comprises an LED chip on which the phosphor composition is deposited and/or b) the composition is in a form of a film.

28. A television comprising the display device of claim 24 .

29. A smartphone comprising the display device of claim 24 .

30. A computer monitor comprising the display device of claim 24 .

31. A tablet comprising the display device of claim 24 .

32. The light emitting diode device according to claim 27 , wherein b) the composition is in a form of a film, the light emitting diode device comprises a semiconductor light source and the film is remote from the semiconductor light source.

33. The light emitting diode device according to claim 27 , wherein b) the composition is in a form of a film and the film further comprises quantum dot material.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2025
From: GENERAL ELECTRIC COMPANY
To: GE INTELLECTUAL PROPERTY LICENSING, LLC
Reel/Frame 070636/0815 →
CHANGE OF NAME Recorded Mar 26, 2025
From: GE INTELLECTUAL PROPERTY LICENSING, LLC
To: DOLBY INTELLECTUAL PROPERTY LICENSING, LLC
Reel/Frame 070643/0907 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2025
From: DOLBY INTELLECTUAL PROPERTY LICENSING, LLC
To: EDISON INNOVATIONS, LLC
Reel/Frame 070293/0273 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2019
From: BUTTS, MATTHEW DAVID; MURPHY, JAMES EDWARD; DOHERTY, MARK DANIEL
To: GENERAL ELECTRIC COMPANY
Reel/Frame 049252/0242 →
Cited By (1)
US 12,312,524