Manufacturing of a power semiconductor module

1. A semi-manufactured power semiconductor module, comprising:

a substrate for bonding at least one power semiconductor chip;

a first leadframe bonded to the substrate and providing power terminals, the power terminals of the first leadframe having a first thickness; and

a second leadframe bonded to the substrate and providing auxiliary terminals, the auxiliary terminals of the second leadframe having a second thickness that is different than the first thickness;

wherein the first leadframe and/or the second leadframe comprise means for aligning the first leadframe and the second leadframe with respect to each other and/or with respect to a mold for molding an encapsulation around the substrate, the first leadframe and the second leadframe.

2. The semi-manufactured power semiconductor module of claim 1 , wherein the means for aligning comprises a first interlocking element of the first leadframe and a second interlocking element of the second leadframe, the second interlocking element form fitting into the first interlocking element.

3. The semi-manufactured power semiconductor module of claim 2 , wherein one of the first and second interlocking elements has a broadened tip and the other one of the first and second interlocking elements has a correspondingly shaped opening.

4. The semi-manufactured power semiconductor module of claim 2 , wherein the first leadframe comprises a holding element surrounding the second leadframe and an interlocking element is provided by the holding element.

5. The semi-manufactured power semiconductor module of claim 1 , wherein the means for aligning comprises:

an interlocking element of the first leadframe that is adapted for being arranged in a corresponding interlocking part of the mold; and/or

an interlocking element of the second leadframe that is adapted for being arranged in a corresponding interlocking part of the mold.

6. The semi-manufactured power semiconductor module of claim 1 , wherein the means for aligning is provided on a side of a power terminal and/or an auxiliary terminal.

7. The semi-manufactured power semiconductor module claim 2 , wherein interlocking elements of the first leadframe and the second leadframe are arranged on a line to be covered by a border of the mold.

8. The semi-manufactured power semiconductor module of claim 2 , wherein the first leadframe comprises a dam element interconnecting the power terminals, the dam element to be covered by a border of the mold; and/or

wherein the second leadframe comprises a dam element interconnecting the auxiliary terminals, the dam element to be covered by the border of the mold.

9. The semi-manufactured power semiconductor module of claim 8 , wherein interlocking elements of the first leadframe and the second leadframe are provided on a line with the dam element and/or are parts of the dam element.

10. The semi-manufactured power semiconductor module of claim 1 , wherein the first leadframe and the second leadframe are made of a different material.

11. The semi-manufactured power semiconductor module of claim 1 , wherein the first leadframe is made from one metal sheet and/or wherein the second leadframe is made from one metal sheet.

12. The semi-manufactured power semiconductor module of claim 1 , wherein at least some of the auxiliary terminals have a press-fit tip.

13. The semi-manufactured power semiconductor module according to claim 2 , wherein the means for aligning comprises a plurality of interlocking element pairs, each interlocking element pair including a single first interlocking element of the first leadframe and a single second interlocking element of the second leadframe, the second interlocking element form fitting into the first interlocking element.

14. The semi-manufactured power semiconductor module of claim 2 , wherein the means for aligning comprises a plurality of interlocking element pairs, each interlocking element pair including a plurality of first interlocking elements of the first leadframe and a plurality of second interlocking elements of the second leadframe, each second interlocking element form fitting into an associated one of the first interlocking elements.

15. The semi-manufactured power semiconductor module of claim 1 , wherein the first leadframe is made from one metal sheet and wherein the second leadframe is made from a plurality of metal sheets.

16. The semi-manufactured power semiconductor module of claim 1 , wherein the means for aligning comprises a sealing element, a first fork element of the first leadframe and a second fork element of the second leadframe.

17. The semi-manufactured power semiconductor module of claim 16 , wherein the first fork element pointing toward the second fork element such that an opening is formed between the first fork element and the second fork element, the sealing element disposed in the opening.

18. A semi-manufactured power semiconductor module, comprising:

a substrate that includes a pad portion to which a power semiconductor is to be bonded;

a first leadframe bonded to the substrate and having power terminals of a first thickness, the first leadframe having a first interlocking element; and

a second leadframe bonded to the substrate and having auxiliary terminals of a second thickness that is different than the first thickness, the second leadframe having a second interlocking element, the first interlocking and the second interlocking element forming a means for aligning the first leadframe and the second leadframe with respect to each other.

19. The semi-manufactured power semiconductor module of claim 18 , wherein one of the first and second interlocking elements has a broadened tip and the other one of the first and second interlocking elements has an correspondingly shaped opening.

20. The semi-manufactured power semiconductor module of claim 19 , wherein the power terminals and the auxiliary terminals extend in a first direction and wherein the module further comprises further power terminals extending in a second direction that is opposite the first direction.

21. The semi-manufactured power semiconductor module of claim 20 , wherein each of the power terminals and further power terminals has a proximate end adjacent the pad portion and a distal end opposite the proximate end, the semi-manufactured power semiconductor module further comprising a holding element attached at the distal end of each of the power terminals.

22. The semi-manufactured power semiconductor module of claim 21 , wherein the holding element extends around the substrate and is attached at the distal end of each of the further power terminals.

23. The semi-manufactured power semiconductor module of claim 21 , the holding element is not attached to any of the further power terminals.

24. The semi-manufactured power semiconductor module of claim 19 , further comprising a power semiconductor chip bonded to the pad portion of the substrate.

25. A semi-manufactured power semiconductor module, comprising:

a substrate for bonding at least one power semiconductor chip;

a first leadframe bonded to the substrate and providing power terminals and a first interlocking element, the power terminals of the first leadframe having a first thickness; and

a second leadframe bonded to the substrate and providing auxiliary terminals and a second interlocking element, the auxiliary terminals of the second leadframe having a second thickness that is less than the first thickness, wherein the first interlocking element and the second interlocking element align the first leadframe and the second leadframe with respect to each other.