Nitride crystal
An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of In x Al y Ga 1-x-y N (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.
1. A nitride crystal represented by the composition formula of In x Al y Ga 1-x-y N (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1),
with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.
2. The nitride crystal according to claim 1 , wherein the hardness is 22.5 GPa or more as measured by a nanoindentation method with a maximum load in the range of 1 mN or more and 50 mN or less.
3. The nitride crystal according to claim 1 , wherein the hardness is 23.2 GPa or more as measured by a nanoindentation method with a maximum load in the range of 1 mN or more and 50 mN or less.