IP Library Patent Application 16422329
Patent Application
App. No. 16/422,329

INVISIBLE FINGERPRINT COATINGS AND PROCESS FOR FORMING SAME

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Quick Facts
Patent No.
US None
App. No.
16/422,329
Abstract

A process for forming a fingerprint-resistant coating on a substrate comprising activating the substrate by exposure to a plasma, and then depositing on the activated substrate an alkyl silane, a POSS, or a mixture thereof.

Claims (45)

1 . A fingerprint-resistant substrate made by a process comprising,

applying a formulation for a fingerprint-resistant coating onto a surface of a substrate,

wherein the fingerprint-resistant surface has a delta E of less than 2.

2 . The fingerprint-resistant substrate of claim 1 , wherein the fingerprint-resistant surface has an initial oil angle of less than about 40° and an initial water angle of greater than about 65°.

3 . The fingerprint-resistant substrate of claim 2 , wherein the formulation for a fingerprint-resistant coating comprises an alkyl silane of the formula

(R A ) 3 SiR B ,

wherein each R A is independently —OC 1 -C 6 alkyl, —OC 2 -C 6 alkenyl, or —OC 2 -C 6 alkynyl;

R B is C 1 -C 20 alkyl, C 2 -C 20 alkenyl, or C 2 -C 20 alkynyl; wherein each hydrogen atom in —OC 1 -C 6 alkyl, —OC 2 -C 6 alkenyl, —OC 2 -C 6 alkynyl, C 1 -C 20 alkyl, C 2 -C 20 alkenyl, or C 2 -C 20 alkynyl is independently optionally substituted with deuterium, halogen, —OH, —CN, —OR 1 , —CO 2 H, C(O)OR 1 , —C(O)OC 1 -C 20 —PO 3 H 2 , —C(O)NH 2 , C(O)NH(C 1 -C 6 alkyl), —C(O)N(C 1 -C 6 alkyl) 2 , SC 1 -C 6 alkyl, S(O)C 1 -C 6 alkyl, —S(O) 2 C 1 -C 6 alkyl, —S(O)NH(C 1 -C 6 alkyl), —S(O) 2 NH(C 1 -C 6 alkyl), S(O)N(C 1 C 6 alkyl) 2 , —S(O) 2 N(C 1 -C 6 alkyl) 2 , —NH 2 , NH(C 1 -C 6 alkyl), —N(H)C 1 -C 6 alkyl-NH 2 , N(H)C 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(R 1 )C 1 -C 6 alkyl-N(R 1 )C 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(H)C 1 -C 6 alkyl-OC 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(H)C 1 -C 6 alkyl-N(H)C 1 -C 6 alkyl-NH 2 , —P(C 1 -C 6 alkyl) 2 , —P(O)(C 1 -C 6 alkyl) 2 , —PO 3 H 2 , or Si(OC 1 -C 6 alkyl) 3 ; and wherein each hydrogen atom in C 1 -C 6 alkyl of —N(H)C 1 -C 6 alkyl-O—C 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 is optionally substituted with hydroxy; and

R 1 is independently deuterium, C 1 -C 6 alkyl, C 2 -C 6 alkenyl, C 2 C 6 alkynyl, C 3 -C 6 cycloalkyl, or —C 1 -C 6 alkyl-O—C 1 -C 6 alkyl, wherein each hydrogen atom in C 1 -C 6 alkyl is optionally substituted with hydroxy.

4 . The fingerprint-resistant substrate of claim 3 , wherein R B is C 6 -C 20 alkyl and each hydrogen atom in C 6 -C 20 alkyl is independently optionally substituted by halogen, —OH, —CN, —OR 1 , —CO 2 H, —NH 2 , NH(C 1 -C 6 alkyl), —N(C 1 -C 6 alkyl) 2 , —P(C 1 -C 6 alkyl) 2 , —P(O)(C 1 -C 6 alkyl) 2 , or —PO 3 H 2 , wherein R 1 is independently deuterium or —C 1 -C 6 alkyl-O—C 1 -C 6 alkyl.

5 . The fingerprint-resistant substrate of claim 4 , wherein the alkyl silane is selected from the group consisting of (chloroundecyl)(triethoxy)silane, (chloroundecyl)(trimethoxy)silane, (chlorohexyl)(triethoxy)silane, (chlorohexyl)(trimethoxy)silane, 11-(2-methoxyethoxy)undecyltrimethoxysilane, (aminoundecyl)(triethoxy)silane, (aminoundecyl)(trimethoxy)silane, (hydoxydecyl)(triethoxy)silane, (hydoxydecyl)(trimethoxy)silane, (11-undecylinicacid)(triethoxy)silane, (hydroxyheptyl)(triethoxy) silane, (hydroxyundecyl)(triethoxy)silane, and (11-phosphoundecyl)(triethoxy)silane.

6 . The fingerprint-resistant substrate of claim 1 , wherein the formulation for a fingerprint-resistant coating comprises a POSS of the formula

wherein R is —C 1 -C 6 alkyl, -A E -O—B F -C G -O-D H , or —O-Si(C 1 -C 6 alkyl) 3 , wherein A is C 1 -C 6 alkyl, B is —C 1 -C 6 alkyl-O—, C is C 1 -C 6 alkyl, D is C 1 -C 6 alkyl, O is oxygen, each of E, G, and H is at least 1, and F is an integer from 5 to 12, and wherein each hydrogen atom in C 1 C 6 alkyl is independently optionally substituted with deuterium, halogen, —OH, —CN, —OR 2 , OC 1 -C 6 alkyl, —NH 2 , NH(C 1 -C 6 alkyl), —NH(C 1 -C 6 alkyl), —N(H)C 1 -C 6 alkyl-NH 2 , —N(C 1 -C 6 alkyl) 2 , —P(C 1 -C 6 alkyl) 2 , —P(O)(C 1 -C 6 alkyl) 2 , or —OPO 3 H; and

wherein R 2 is independently deuterium, C 2 -C 6 alkenyl, C 2 -C 6 alkynyl, C 3 -C 6 cycloalkyl, or —CC 1 -C 6 alkyl-O—C 1 -C 6 alkyl.

7 . The fingerprint-resistant substrate of claim 6 , wherein R is -A E -O—B F -C G -O-D H or —O—Si(C 1 -C 6 alkyl) 3 .

8 . The fingerprint-resistant substrate of claim 1 , wherein the fingerprint-resistant substrate has a coefficient of friction less than about 0.2.

9 . The fingerprint-resistant substrate of claim 1 , wherein the substrate is comprises at least one material selected from the group consisting of glass, metal oxide, and acrylic polymer.

10 . The fingerprint-resistant substrate of claim 1 , wherein the fingerprint-resistant substrate has an initial oil angle of at least less than about 40°.

11 . The fingerprint-resistant substrate of claim 10 , wherein the fingerprint-resistant substrate has an initial water angle of about 70° to about 90°.

12 . A formulation for a fingerprint-resistant coating, the formulation comprising

an alkyl silane,

a POSS, and

a solvent,

wherein the alkyl silane is of the formula

(R A ) 3 SiR B ,

wherein each R A is independently —OC 1 -C 6 alkyl, —OC 2 -C 6 alkenyl, or —OC 2 -C 6 alkynyl;

R B is C 1 -C 20 alkyl, C 2 -C 20 alkenyl, or C 2 -C 20 alkynyl; wherein each hydrogen atom in —OC 1 -C 6 alkyl, —OC 2 -C 6 alkenyl, —OC 2 -C 6 alkynyl, C 1 -C 20 alkyl, C 2 -C 20 alkenyl, or C 2 -C 20 alkynyl is independently optionally substituted with deuterium, halogen, —OH, —CN, —OR 1 , —CO 2 H, C(O)OR 1 , —C(O)OC 1 -C 20 —PO 3 H 2 , —C(O)NH 2 , C(O)NH(C 1 -C 6 alkyl), —C(O)N(C 1 -C 6 alkyl) 2 , SC 1 -C 6 alkyl, S(O)C 1 -C 6 alkyl, —S(O) 2 C 1 -C 6 alkyl, —S(O)NH(C 1 -C 6 alkyl), —S(O) 2 NH(C 1 -C 6 alkyl), S(O)N(C 1 C 6 alkyl) 2 , —S(O) 2 N(C 1 -C 6 alkyl) 2 , —NH 2 , NH(C 1 -C 6 alkyl), —N(H)C 1 -C 6 alkyl-NH 2 , N(H)C 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(R 1 )C 1 -C 6 alkyl-N(R)C 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(H)C 1 -C 6 alkyl-OC 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(H)C 1 -C 6 alkyl-N(H)C 1 -C 6 alkyl-NH 2 , —P(C 1 -C 6 alkyl) 2 , —P(O)(C 1 -C 6 alkyl) 2 , —PO 3 H 2 , or Si(OC 1 -C 6 alkyl) 3 ; and wherein each hydrogen atom in C 1 -C 6 alkyl of —N(H)C 1 -C 6 alkyl-O—C 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 is optionally substituted with hydroxy; and

R 1 is independently deuterium, C 1 -C 6 alkyl, C 2 -C 6 alkenyl, C 2 C 6 alkynyl, C 3 -C 6 cycloalkyl, or —C 1 -C 6 alkyl-O—C 1 -C 6 alkyl, wherein each hydrogen atom in C 1 -C 6 alkyl is optionally substituted with hydroxy.

13 . The formulation of claim 12 , wherein R B is C 6 -C 20 alkyl and each hydrogen atom in C 6 -C 20 alkyl is independently optionally substituted by halogen, —OH, —CN, —OR 1 , —CO 2 H, —NH 2 , NH(C 1 -C 6 alkyl), —N(C 1 -C 6 alkyl) 2 , —P(C 1 -C 6 alkyl) 2 , —P(O)(C 1 -C 6 alkyl) 2 , —PO 3 H 2 , wherein R 1 is independently deuterium or —C 1 -C 6 alkyl-O—C 1 -C 6 alkyl.

14 . The formulation of claim 13 , wherein the alkyl silane is selected from the group consisting of (chloroundecyl)(triethoxy)silane, (chloroundecyl)(trimethoxy)silane, (chlorohexyl)(triethoxy)silane, (chlorohexyl)(trimethoxy) silane, 11-(2-methoxyethoxy)undecyltrimethoxysilane, (aminoundecyl)(triethoxy)silane, (aminoundecyl)(trimethoxy)silane, (hydoxydecyl)(triethoxy)silane, (hydoxydecyl)(trimethoxy)silane, (11undecylinicacid)(triethoxy)silane, (hydroxyheptyl)(triethoxy) silane, (hydroxyundecyl)(triethoxy)silane, and (11-phosphoundecyl)(triethoxy)silane.

15 . The formulation of claim 12 , wherein the POSS is of the formula

wherein R is —C 1 -C 6 alkyl, -A E -O—B F -C G -O-D H , or —O-Si(C 1 -C 6 alkyl) 3 , wherein A is C 1 -C 6 alkyl, B is —C 1 -C 6 alkyl-O—, C is C 1 -C 6 alkyl, D is C 1 -C 6 alkyl, O is oxygen, each of E, G, and H is at least 1, and F is an integer from 5 to 12, and wherein each hydrogen atom in C 1 C 6 alkyl is independently optionally substituted with deuterium, halogen, —OH, —CN, —OR 2 , OC 1 -C 6 alkyl, —NH 2 , NH(C 1 -C 6 alkyl), —NH(C 1 -C 6 alkyl), —N(H)C 1 -C 6 alkyl-NH 2 , —N(C 1 -C 6 alkyl) 2 , P(C 1 -C 6 alkyl) 2 , —P(O)(C 1 -C 6 alkyl) 2 , or —OPO 3 H; and

wherein R 2 is independently deuterium, C 2 -C 6 alkenyl, C 2 -C 6 alkynyl, C 3 -C 6 cycloalkyl, or —CC 1 -C 6 alkyl-O—C 1 -C 6 alkyl.

16 . The formulation of claim 12 , wherein the formulation comprises a PDMS.

17 . The formulation of claim 16 , wherein the PDMS is amino terminated.

18 . A process for forming a fingerprint-resistant coating on a substrate, the process comprising

applying a formulation for a fingerprint-resistant coating to a surface of the substrate, and

curing the formulation for a fingerprint-resistant coating on the surface of the substrate to form the fingerprint-resistant coating,

wherein the initial oil angle of the fingerprint-resistant coating is less than about 40° and the coefficient of friction of the fingerprint-resistant coating is less than about 0.15.

19 . The process of claim 18 , wherein the formulation for a fingerprint-resistant coating comprises an alkyl silane of the formula

(R A ) 3 SiR B ,

wherein each R A is independently —OC 1 -C 6 alkyl, —OC 2 -C 6 alkenyl, or —OC 2 -C 6 alkynyl;

R B is C 1 -C 20 alkyl, C 2 -C 20 alkenyl, or C 2 -C 20 alkynyl; wherein each hydrogen atom in —OC 1 -C 6 alkyl, —OC 2 -C 6 alkenyl, —OC 2 -C 6 alkynyl, C 1 -C 20 alkyl, C 2 -C 20 alkenyl, or C 2 -C 20 alkynyl is independently optionally substituted with deuterium, halogen, —OH, —CN, —OR 1 , —CO 2 H, C(O)OR 1 , —C(O)OC 1 -C 20 —PO 3 H 2 , —C(O)NH 2 , C(O)NH(C 1 -C 6 alkyl), —C(O)N(C 1 -C 6 alkyl) 2 , SC 1 -C 6 alkyl, S(O)C 1 -C 6 alkyl, —S(O) 2 C 1 -C 6 alkyl, —S(O)NH(C 1 -C 6 alkyl), —S(O) 2 NH(C 1 -C 6 alkyl), S(O)N(C 1 C 6 alkyl) 2 , —S(O) 2 N(C 1 -C 6 alkyl) 2 , —NH 2 , NH(C 1 -C 6 alkyl), —N(H)C 1 -C 6 alkyl-NH 2 , N(H)C 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(R 1 )C 1 -C 6 alkyl-N(R)C 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(H)C 1 -C 6 alkyl-OC 1 -C 6 alkyl-Si(˜OC 1 -C 6 alkyl) 3 , —N(H)C 1 -C 6 alkyl-N(H)C 1 -C 6 alkyl-NH 2 , —P(C 1 -C 6 alkyl) 2 , —P(O)(C 1 -C 6 alkyl) 2 , —PO 3 H 2 , or Si(OC 1 -C 6 alkyl) 3 ; and wherein each hydrogen atom in C 1 -C 6 alkyl of —N(H)C 1 -C 6 alkyl-O—C 1 -C 6 alkyl-Si(—OC 1 -C 6 alkyl) 3 is optionally substituted with hydroxy; and

R 1 is independently deuterium, C 1 -C 6 alkyl, C 2 -C 6 alkenyl, C 2 C 6 alkynyl, C 3 -C 6 cycloalkyl, or —C 1 -C 6 alkyl-O—C 1 -C 6 alkyl, wherein each hydrogen atom in C 1 -C 6 alkyl is optionally substituted with hydroxy.

20 . The process of claim 18 , wherein the step of applying is performed by chemical vapor deposition, physical vapor deposition, dipping, wiping, or spraying the formulation for a fingerprint-resistant coating onto the surface of the substrate.

Assignments (3)
CORRECTIVE ASSIGNMENT TO REMOVE U.S. PATENT NOS. 10,525,504 AND U.S. PATENT APPLICATION NO. 14/268,757 PREVIOUSLY RECORDED AT REEL: 065406 FRAME: 0320. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Mar 13, 2025
From: NBD NANOTECHNOLOGIES INC.
To: HENKEL AG & CO. KGAA
Reel/Frame 070510/0967 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2023
From: NBD NANOTECHNOLOGIES INC.
To: HENKEL AG & CO. KGAA
Reel/Frame 065406/0320 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 31, 2019
From: GALVEZ, MIGUEL; ZHANG, BONG JUNE; ALTINOK, ESRA
To: NBD NANOTECHNOLOGIES, INC.
Reel/Frame 049328/0396 →