VCSEL with elliptical aperture having reduced RIN
A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.
1. A VCSEL comprising:
an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.64 to about 0.75, the VCSEL having a relative intensity noise (RIN) of less than or about −140 dB/Hz; and
one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape.
2. The VCSEL of claim 1 , further comprising an elliptical emission aperture having same dimensions of the elliptical oxide aperture.
3. The VCSEL of claim 2 , further comprising an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture.
4. The VCSEL of claim 3 , wherein the elliptical contact is C-shaped.
5. The VCSEL of claim 1 , wherein the one or more trenches are trapezoidal shaped trenches.
6. The VCSEL of claim 5 , further comprising a mesa having the elliptical oxide aperture, oxidized region, elliptical emission aperture, elliptical contact, and one or more trenches in the elliptical shape.
7. The VCSEL of claim 6 , further comprising a contact pad and an electrical connector that electrically connects the contact pad with the elliptical contact.
8. A VCSEL array, comprising:
a wafer including a plurality of VCSELs arranged in a VCSEL array, each VCSEL comprising:
an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.6 to about 0.8,
wherein the VCSEL array has a normal quantile of at least or about 0.9 (90%) having at least a standard of acceptability.
9. The VCSEL array of claim 8 , each VCSEL having a relative intensity noise (MN) of less than or about −140 dB/Hz.
10. The VCSEL array of claim 8 , each VCSEL having the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.64 and 0.75.
11. The VCSEL array of claim 8 , each VCSEL further comprising one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape.
12. The VCSEL array of claim 11 , wherein the one or more trenches are trapezoidal shaped trenches.
13. The VCSEL array of claim 11 , each VCSEL further comprising a mesa having the elliptical oxide aperture, oxidized region, an elliptical emission aperture, an elliptical contact, and one or more of the trenches in the elliptical shape.
14. The VCSEL of claim 8 , each VCSEL further comprising a contact pad and an electrical connector that electrically connects the contact pad with an elliptical contact that is around an elliptical emission aperture of the emission surface.
15. A method of manufacturing the VCSEL of claim 1 , the method comprising:
obtaining a radius ratio for an elliptical oxide aperture for a VCSEL having a relative intensity noise (MN) of less than −140 dB/Hz;
identifying a short radius dimension and a large radius dimension for the radius ratio;
preparing a VCSEL stack of layers; and
oxidizing at least a portion of the VCSEL stack of layers to form the elliptical oxide aperture within a lateral oxidized region so as to have the radius ratio, short radius, and large radius,
wherein the preparing and oxidizing is performed to produce a plurality of VCSELs having the elliptical oxide aperture within the lateral oxidized region so as to have the radius ratio, short radius, and large radius, the plurality of VCSELs having a normal quantile of at least or about 0.9 (90%) having or above a standard of acceptability.
16. The method of claim 15 , further comprising:
preparing the plurality of VCSELs on a single wafer in a VCSEL array.
17. A plurality of VCSELs, each VCSEL comprising:
an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being from about 0.6 to about 0.8, the VCSEL having a relative intensity noise (RIN) of less than or about −140 dB/Hz,
wherein the plurality of VCSELs has a normal quantile of at least or about 0.9 (90%) having at least a standard of acceptability.
18. The plurality of VCSELs of claim 17 , wherein the plurality of VCSELs are in a single group of single wafers.
19. The VCSEL of claim 1 , wherein the short radius is about 2.8 microns to about 3.1 microns.