Semiconductor device and method of manufacturing the same
A semiconductor device has inner leads ( 2 a ) of leads ( 2 ) which are covered with a first resin-encapsulating body ( 4 ), and has outer leads ( 2 b ) which are exposed from the first resin-encapsulating body ( 4 ), and which are given a shape bending downward and have distal ends having the bending shape extending in a lateral direction. The inner leads ( 2 a ) embedded in the first resin-encapsulating body ( 4 ) extend inward, and are then formed into a shape bending downward. Above end portions ( 3 ) having the bending shape, an element mounting portion ( 11 ) is formed of the first resin-encapsulating body ( 4 ), and a semiconductor element ( 6 ) placed on the element mounting portion ( 11 ) is covered with a second resin-encapsulating body ( 8 ).
1. A semiconductor device, comprising:
a first resin-encapsulating body;
a semiconductor element in contact with and attached to a surface of the first resin-encapsulating body;
inner leads around the semiconductor element, and electrically connected to the semiconductor element;
outer leads extending from the inner leads; and
a second resin-encapsulating body covering an upper surface of the first resin-encapsulating body and the semiconductor element,
wherein the inner leads are covered by the first resin-encapsulating body, and
upper surfaces of end portions of the inner leads are vertically below and spaced apart from the semiconductor element; and
wherein the first resin-encapsulating body includes a convex region and the end portions of the inner leads are covered by the convex region and the semiconductor element is attached to the convex region.
2. The semiconductor device according to claim 1 , wherein the end portions of the inner leads have a bent shape.
3. The semiconductor device according to claim 1 , wherein a portion of the inner leads are partially exposed by the first resin-encapsulating body and the portion is in contact with the second resin-encapsulating body.
4. The semiconductor device according to claim 2 , wherein a portion of the inner leads are partially exposed by the first resin-encapsulating body and the portion is in contact with the second resin-encapsulating body.
5. The semiconductor device according to claim 1 , wherein the inner leads are at two opposing side surfaces of the first resin-encapsulating body, and resin-holding leads reside at side surfaces adjacent to the two opposing side surfaces.
6. The semiconductor device according to claim 2 , wherein the inner leads are at two opposing side surfaces of the first resin-encapsulating body, and resin-holding leads reside at side surfaces adjacent to the two opposing side surfaces.
7. The semiconductor device according to claim 3 , wherein the inner leads are at two opposing side surfaces of the first resin-encapsulating body, and resin-holding leads reside at side surfaces adjacent to the two opposing side surfaces.
8. The semiconductor device according to claim 4 , wherein the inner leads are at two opposing side surfaces of the first resin-encapsulating body, and resin-holding leads reside at side surfaces adjacent to the two opposing side surfaces.
9. The semiconductor device according to claim 5 , wherein end portions of the resin-holding leads have a bent shape.
10. The semiconductor device according to claim 6 , wherein end portions of the resin-holding leads have a bent shape.
11. The semiconductor device according to claim 7 , wherein end portions of the resin-holding leads have a bent shape.
12. The semiconductor device according to claim 8 , wherein end portions of the resin-holding leads have a bent shape.
13. The semiconductor device according to claim 1 , wherein a thickness of the second resin-encapsulating body on the semiconductor element is thinner than a thickness of the first resin-encapsulating body.
14. The semiconductor device according to claim 2 , wherein a thickness of the second resin-encapsulating body on the semiconductor element is thinner than a thickness of the first resin-encapsulating body.
15. The semiconductor device according to claim 3 , wherein a thickness of the second resin-encapsulating body on the semiconductor element is thinner than a thickness of the first resin-encapsulating body.
16. The semiconductor device according to claim 4 , wherein a thickness of the second resin-encapsulating body on the semiconductor element is thinner than a thickness of the first resin-encapsulating body.