Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
A method for processing a semiconductor substrate includes providing the semiconductor substrate having die formed as part of the semiconductor substrate and separated from each other by singulation lines. The semiconductor substrate has first and second opposing major surfaces and contacts disposed over the first major surface. A layer of material is disposed over the second major surface, and the singulation lines extend inward from the first major surface into the semiconductor substrate without extending through the layer of material so that the layer of material is under the singulation lines. The method includes separating the layer of material proximate to the singulation lines by exposing the layer of material to a reduced temperature below about minus 150 degrees Celsius. In some examples, a cryogenic fluid can be to provide the reduced temperature. The method provides a reliable and efficient way to bulk separate at least the layer of material.
1. A method for processing a semiconductor substrate comprising:
providing the semiconductor substrate having die formed as part of the semiconductor substrate and separated from each other by singulation lines, wherein:
the semiconductor substrate comprises first and second opposing major surfaces, contacts are disposed over the first major surface,
a layer of material is disposed over the second major surface, and
the singulation lines comprise open recesses between adjoining die where portions of the semiconductor substrate have been removed, the singulation lines extending inward from the first major surface into the semiconductor substrate without extending through the layer of material so that the layer of material is under the singulation lines; and
separating the layer of material proximate to the singulation lines by exposing the layer of material to a reduced temperature below about minus 150 degrees Celsius.
2. The method of claim 1 , wherein:
providing the semiconductor substrate comprises providing the semiconductor substrate attached to a carrier substrate.
3. The method of claim 2 , wherein:
providing the semiconductor substrate comprises placing the layer of material adjacent to the carrier substrate.
4. The method of claim 1 , wherein:
exposing comprises exposing while the semiconductor substrate is constrained in a first direction.
5. The method of claim 1 , wherein exposing the layer of material comprises:
providing an apparatus comprising a plate structure and a support structure, the support structure comprising a recess;
in any order:
placing the semiconductor substrate within the recess; and
providing a thermal transfer medium within the recess; and
exposing the thermal transfer medium to the reduced temperature thereby transitioning the thermal transfer medium from a first state to a second state.
6. The method of claim 5 , wherein:
providing the thermal transfer medium within the recess comprises contacting the thermal transfer medium and the layer of material.
7. The method of claim 5 , wherein:
providing the apparatus comprises providing a protective film within the recess.
8. The method of claim 5 , wherein:
providing the apparatus comprises providing an edge structure within the recess configured to deform to provide space for the thermal transfer medium to expand into during the exposing step.
9. The method of claim 5 , wherein:
providing the thermal transfer medium comprises providing a liquid; and
exposing comprises freezing the liquid.
10. The method of claim 1 further comprising heating the semiconductor substrate after the exposing step.
11. The method of claim 1 , wherein providing the semiconductor substrate comprises:
providing the layer of material comprising one or more of a metal, a wafer back coating, or a die attach film.
12. A method of processing a semiconductor substrate, comprising:
providing the semiconductor substrate having die formed as part of the semiconductor substrate and separated from each other by spaces, wherein:
the semiconductor substrate comprises a first major surface and a second major surface opposite to the first major surface,
contacts are disposed adjacent to the first major surface, and
a layer of material is disposed adjacent to the second major surface, placing the semiconductor substrate onto a carrier substrate;
removing portions of the semiconductor substrate through the spaces to form gaps between adjoining die, wherein:
the gaps comprises open recesses extending inward from the first major surface;
the gaps extend at least partially through the semiconductor substrate towards the second major surface, and
the layer of material overlaps the gaps; and
after the removing step, separating the layer of material by exposing the layer of material to a reduced temperature while the semiconductor substrate is constrained in a first direction.
13. The method of claim 12 , wherein exposing comprises:
providing a plate structure and a support structure having a recess;
placing the semiconductor substrate so that at least the contacts are within the recess;
using the plate structure to constrain the semiconductor substrate in the first direction, the first direction being substantially perpendicular to the first major surface;
providing a thermal transfer medium within the recess; and
exposing the thermal transfer medium to the reduced temperature thereby transitioning the thermal transfer medium from a first state to a second state.
14. The method of claim 13 , wherein:
providing the thermal transfer medium comprises providing a liquid; and
exposing comprises freezing the liquid.
15. The method of claim 13 , wherein:
providing the support structure comprises providing an edge structure within the recess configured to deform to provide space for the thermal transfer medium to expand during the exposing step.
16. The method of claim 12 further comprising heating the semiconductor substrate after the exposing step.
17. The method of claim 12 , wherein:
providing the layer of material comprises providing the layer of material comprising one or more of a metal, a wafer back coating, or a die attach film; and
exposing comprises using a cryogenic liquid.
18. A method of processing a semiconductor substrate, comprising:
providing the semiconductor substrate having die formed as part of the semiconductor substrate and separated from each other by spaces, wherein:
the semiconductor substrate comprises a first major surface and a second major surface opposite to the first major surface,
contacts are disposed over the first major surface, and
a layer of material is disposed under the second major surface;
etching at least portions of the semiconductor substrate within the spaces to form gaps between adjoining die; and
after etching, separating at least portions of the layer of material by exposing the layer of material to a reduced temperature while the semiconductor substrate is constrained in a first direction, wherein the exposing step expands the gaps between the adjoining die in a second direction different than the first direction.
19. The method of claim 18 , wherein exposing comprises:
providing a thermal transfer medium;
placing the semiconductor substrate within the thermal transfer medium; and
exposing the thermal transfer medium to the reduced temperature thereby transitioning the thermal transfer medium from a first state to a second state.
20. The method of claim 18 , wherein:
providing the layer of material comprises providing the layer of material comprising one or more of a metal, a wafer back coating, or a die attach film;
the method further comprises providing an apparatus comprising a first structure and a second structure; and
exposing the layer of material to the reduced temperature comprises exposing while the semiconductor substrate is constrained in the first direction between the first structure and the second structure.