Nitride crystal substrate and method for manufacturing the same
View Patent ↗There is provided a nitride crystal substrate constituted by group-III nitride crystal, containing n-type impurities, with an absorption coefficient α being approximately expressed by equation (1) by a least squares method in a wavelength range of at least 1 μm or more and 3.3 μm or less. α= N e Kλ a (1) (where 1.5×10 −19 ≤K≤6.0×10 −19 , a=3), here, a wavelength is λ (μm), an absorption coefficient of the nitride crystal substrate at 27° C. is α (cm −1 ), a carrier concentration in the nitride crystal substrate is N e (cm −3 ), and K and a are constants, wherein an error of an actually measured absorption coefficient with respect to the absorption coefficient α obtained from equation (1) at a wavelength of 2 μm is within ±0.1α, and in a reflection spectrum measured by irradiating the nitride crystal substrate with infrared light, there is no peak with a peak top within a wavenumber range of 1,200 cm −1 or more and 1,500 cm −1 or less.
1. A nitride crystal substrate constituted by group-III nitride single crystal, containing n-type impurities, with an absorption coefficient α being approximated by equation (1) by a method of least squares in a wavelength range of at least 1 μm or more and 3.3 μm or less:
α= N e Kλ a equation (1),
where 1.5×10 −19 ≤K≤6.0×10 −19 , a=3,
a wavelength being λ (μm), an absorption coefficient of the nitride crystal substrate at 27° C. being α (cm −1 ), a carrier concentration in the nitride crystal substrate being Ne (cm −3 ), and K and a being constants,
wherein an error of an actually measured absorption coefficient with respect to the absorption coefficient α obtained from equation (1) at a wavelength of 2 μm is within ±0.1 α, in a reflection spectrum measured by irradiating the nitride crystal substrate with infrared light, there is no peak within a wavenumber range of 1,200 cm −1 or more and 1,500 cm or less, and
a maximum concentration of oxygen in the nitride crystal substrate is less than 1×10 17 at ·cm 3 .
2. The nitride crystal substrate according to claim 1 , wherein Δα satisfies equation (3) in a wavelength range of 1 μm or more and 3.3 μm or less,
Δα≤1.0 equation (3)
a difference between a maximum value and a minimum value of the absorption coefficient α in a main surface of the nitride crystal substrate is Δα.
3. The nitride crystal substrate according to claim 1 , wherein the nitride crystal substrate is a GaN free-standing substrate.