Light-emitting device and manufacturing method thereof
The present disclosure provides a light-emitting device comprises a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance; a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance; and a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights; and wherein the second distance is different form the first distance and the third distance.
1. A light-emitting device, comprising:
a substrate with a topmost surface;
a first semiconductor stack arranged on the substrate, and comprising a first light-emitting layer separated from the topmost surface by a first distance;
a first bonding layer arranged between the substrate and the first semiconductor stack;
a second semiconductor stack arranged on the substrate, and comprising a second light-emitting layer separated from the topmost surface by a second distance;
a second bonding layer arranged between the substrate and the second semiconductor stack;
a third semiconductor stack arranged on the substrate, and comprising third light-emitting layer separated from the topmost surface by a third distance; and
a third bonding layer arranged between the substrate and the third semiconductor stack,
wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights;
wherein the second distance is different form the first distance and the third distance,
wherein the third bonding layer and the second bonding layer have different thicknesses.
2. The light-emitting device of claim 1 , wherein the first semiconductor stack, the second semiconductor stack and the third semiconductor stack are configured to emit red light, green light and blue light, respectively.
3. The light-emitting device of claim 1 , wherein the first semiconductor stack and the third semiconductor stack are made of same materials system.
4. The light-emitting device of claim 1 , further comprising a dielectric layer formed on the first semiconductor stack, the second semiconductor stack and the third semiconductor stack.
5. The light-emitting device of claim 1 , wherein the first semiconductor stack, the second semiconductor stack and the third semiconductor stack are electrically connected with one another.
6. The light-emitting device of claim 1 , wherein the first semiconductor stack, the second semiconductor stack and the third semiconductor stack are electrically connected in parallel with one another.
7. The light-emitting device of claim 1 , wherein the first bonding layer and the second bonding layer have different thicknesses.
8. The light-emitting device of claim 1 , wherein the first semiconductor stack and the second semiconductor stack are not coplanar with each other with their uppermost surfaces.
9. The light-emitting device of claim 8 , wherein the first semiconductor and the third semiconductor stack are coplanar with each other with their uppermost surfaces.
10. The light-emitting device of claim 2 , further comprising a fourth semiconductor stack arranged on the substrate, and configured to emit a color light different from that emitted by any of the light emitted from the first semiconductor stack, the second semiconductor stack and the third semiconductor stack.
11. The light-emitting device of claim 10 , wherein the color light emitted from the fourth semiconductor stack is orange light.