Apparatus for stressing semiconductor substrates
Apparatus for use in preparing heterostructures having a reduced concentration of defects including apparatus for stressing semiconductor substrates to allow them to conform to a crystal having a different crystal lattice constant.
1. An apparatus for stressing a semiconductor substrate, the substrate having a front surface, a back surface and a peripheral edge, the apparatus comprising:
one or more chamber walls that fully enclose a processing chamber,
a heater for heating the chamber,
a substrate holder mounted in the processing chamber fully enclosed by the chamber walls, the holder including:
a front ring,
a back ring,
a clamp for holding the front ring and back ring, and
each ring including an annular support for contacting the substrate adjacent a peripheral edge of the substrate, the front ring adapted to contact the front surface and the back ring adapted to contact the back surface of the substrate, and
a mechanical device for moving the front and back rings radially, the device being driven by pneumatics, hydraulics or a motor.
2. The apparatus as set forth in claim 1 wherein the front ring comprises an annular front support for contacting the substrate at its peripheral edge.
3. The apparatus as set forth in claim 2 wherein the back ring comprises an annular back support for contacting the substrate at its peripheral edge.
4. The apparatus as set forth in claim 1 wherein the back ring comprises an annular back support for contacting the substrate at its peripheral edge.
5. The apparatus as set forth in claim 1 wherein the chamber walls are transparent to allow heating light to pass into the processing chamber.
6. The apparatus as set forth in claim 5 wherein the heater is disposed exterior to the processing chamber.
7. The apparatus as set forth in claim 6 wherein the heater is a first heater, the first heater being disposed above the one or more the chamber walls, the apparatus composing a second heater, the second heater being disposed below the one or more chamber walls.
8. The apparatus as set forth in claim 1 comprising a temperature sensor mounted in the processing chamber configured to monitor the temperature of the substrate holder or semiconductor substrate.
9. An apparatus for stressing a semiconductor substrate, the substrate having a front surface, a back surface and a peripheral edge, the apparatus comprising:
a chamber,
a heater for heating the chamber,
a substrate holder mounted in the chamber, the holder including:
a front ring,
a back ring,
a clamp for holding the front ring and back ring, and
each ring including an annular support for contacting the substrate adjacent a peripheral edge of the substrate, the front ring adapted to contact the front surface and the back ring adapted to contact the back surface of the substrate; a mechanical device for moving the front and back rings radially, the device being driven by pneumatics, hydraulics or a motor; and
a temperature sensor mounted in the chamber configured to monitor the temperature of the substrate holder or semiconductor substrate.
10. The apparatus as set forth in claim 9 wherein the temperature sensor is a pyrometer that receives infrared radiation emitted by the holder or substrate.