Echelle grating demux/mux in SiN
In an example, an Echelle grating wavelength division multiplexing (WDM) device includes a first waveguide, a slab waveguide, multiple second waveguides, an Echelle grating, and a metal-filled trench. The first waveguide includes either an input waveguide or an output waveguide. The multiple second waveguides are optically coupled to the first waveguide through the slab waveguide. The multiple second waveguides include multiple output waveguides if the first waveguide includes the input waveguide or multiple input waveguides if the first waveguide includes the output waveguide. The Echelle grating includes multiple grating teeth formed in the slab waveguide. The metal-filled trench forms a mirror at the grating teeth to reflect incident light from the first waveguide toward the multiple second waveguides or from the multiple second waveguides toward the first waveguide.
1. An Echelle grating wavelength division multiplexing (WDM) device, comprising:
a first waveguide comprising an input waveguide or an output waveguide;
a slab waveguide;
multiple second waveguides optically coupled to the first waveguide through the slab waveguide, the multiple second waveguides comprising multiple output waveguides if the first waveguide comprises the input waveguide or multiple input waveguides if the first waveguide comprises the output waveguide;
an Echelle grating that includes multiple grating teeth formed in the slab waveguide; and
a trench that forms a mirror at the grating teeth to reflect incident light from the first waveguide toward the multiple second waveguides or from the multiple second waveguides to the first waveguide;
wherein the Echelle grating and the trench are encapsulated below a top surface of a silicon (Si) photonic integrated circuit (PIC).
2. The Echelle grating WDM device of claim 1 , further comprising a cladding material positioned to an opposite side of the mirror from the slab waveguide, wherein the slab waveguide comprises silicon nitride (SiN) and the cladding material comprises silicon dioxide (SiO 2 ).
3. The Echelle grating WDM device of claim 1 , wherein the trench is filled with tungsten.
4. The Echelle grating WDM device of claim 1 , wherein the mirror has a broadband reflectivity of at least 70%.
5. The Echelle grating WDM device of claim 4 , wherein the mirror has the broadband reflectivity of at least 70% over a wavelength range of at least 70 nanometers.
6. The Echelle grating WDM device of claim 1 , wherein at least the slab waveguide and the trench are formed in a back end of line (BEOL) process of a complementary metal-oxide-semiconductor (CMOS) fabrication process used to form the Echelle grating WDM device.
7. The Echelle grating WDM device of claim 1 , wherein the Echelle grating and the trench are encapsulated at least 240 nanometers (nm) below the top surface of the Si PIC, the Echelle grating and the trench included in the Si PIC.
8. The Echelle grating WDM device of claim 7 , wherein the Echelle grating and the trench are encapsulated 240 nm to 600 nm below the top surface of the Si PIC.
9. The Echelle grating WDM device of claim 7 , wherein the grating teeth have a pitch less than 300 nanometers.
10. An Echelle grating wavelength division multiplexing (WDM) device, comprising:
a first waveguide comprising an input waveguide or an output waveguide;
a slab waveguide comprising silicon nitride (SiN);
multiple second waveguides optically coupled to the first waveguide through the slab waveguide, the multiple second waveguides comprising multiple output waveguides if the first waveguide comprises the input waveguide or multiple input waveguides if the first waveguide comprises the output waveguide;
an Echelle grating; and
a trench that forms a mirror to reflect incident light from the first waveguide toward the multiple second waveguides or from the multiple second waveguides to the first waveguide, the trench defined by a toothed wall formed by a cladding material and spaced apart from a toothed wall formed by the slab waveguide.
11. The Echelle grating WDM device of claim 10 , further comprising a cladding material positioned to an opposite side of the mirror from the slab waveguide, wherein the slab waveguide comprises silicon nitride (SiN) and the cladding material comprises silicon dioxide (SiO 2 ).
12. The Echelle grating WDM device of claim 10 , wherein the mirror has a broadband reflectivity of at least 70%.
13. The Echelle grating WDM device of claim 12 , wherein the mirror has the broadband reflectivity of at least 70% over a wavelength range of at least 70 nanometers.
14. The Echelle grating WDM device of claim 10 , wherein the Echelle grating and the trench are encapsulated at least 240 nanometers (nm) below the top surface of the Si PIC, the Echelle grating and the trench included in the Si PIC.
15. The Echelle grating WDM device of claim 14 , wherein the Echelle grating includes multiple grating teeth formed in the slab waveguide and wherein the grating teeth have a pitch less than 300 nanometers.
16. An Echelle grating multiplexer (mux), comprising:
an output waveguide;
a slab waveguide;
multiple input waveguides optically coupled to the output waveguide through the slab waveguide;
an Echelle grating formed in a silicon nitride (SiN) layer of a silicon (Si) photonic integrated circuit (PIC), the Echelle grating including multiple grating teeth formed in the slab waveguide, the multiple grating teeth having a pitch of less than 300 nanometers (nm); and
a broadband mirror located at the multiple grating teeth and encapsulated below a top surface of the Si PIC.
17. The Echelle grating mux of claim 16 , wherein the broadband mirror comprises a metal-filled trench formed in the SiN layer between a cladding material and the multiple grating teeth of the Echelle grating and the slab waveguide.
18. The Echelle grating mux of claim 16 , wherein the broadband mirror comprises a mirror with a reflectivity of at least 70% over a wavelength range of at least 70 nm.
19. The Echelle grating mux of claim 16 , wherein the Echelle grating and the broadband mirror are encapsulated at least 240 nanometers (nm) below the top surface of the Si PIC.
20. The Echelle grating mux of claim 16 , wherein the Echelle grating and the broadband mirror are encapsulated 240 nm to 600 nm below the top surface of the Si PIC.