IP Library Granted Patent US 11,431,153
Granted Patent B2
US 11,431,153 · App. 16/440,577 · Granted Aug 30, 2022

Semiconductor optical amplifier, light output apparatus, and distance measuring apparatus

Inventors: Junichiro Hayakawa (Ebina, JP); Akemi Murakami (Ebina, JP)
Assignee: FUJIFILM Business Innovation Corp.
H01S5/50H01S5/125H01S5/18311H01S5/423
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Quick Facts
Patent No.
US 11,431,153
App. No.
16/440,577
Granted
Aug 30, 2022
Kind
B2
Abstract

A semiconductor optical amplifier includes: a light source part that is formed on a substrate, the substrate including a substrate surface; and an optical amplification part that amplifies propagation light propagating in a predetermined direction from the light source part and that emits the propagation light amplified in an emission direction intersecting with the substrate surface, the optical amplification part including a conductive region extending in the predetermined direction from the light source part along the substrate surface and a non-conductive region formed on a periphery of the conductive region, the conductive region including a reflection part that reflects the propagation light in a direction intersecting with the predetermined direction when viewed from a direction vertical to the substrate surface.

Claims (25)

1. A semiconductor optical amplifier comprising:

a light source part that is formed on a substrate, the substrate including a substrate surface; and

an optical amplification part that amplifies propagation light propagating in a predetermined direction from the light source part and that emits the propagation light amplified in an emission direction intersecting with the substrate surface, the optical amplification part including a conductive region extending in the predetermined direction from the light source part along the substrate surface and a non-conductive region formed on a periphery of the conductive region, the conductive region including a reflection part that reflects the propagation light in a direction intersecting with the predetermined direction when viewed from a direction vertical to the substrate surface.

2. The semiconductor optical amplifier according to claim 1 , wherein the emission direction is a direction inclined to the predetermined direction.

3. The semiconductor optical amplifier according to claim 2 , wherein the reflection part is an end face of the conductive region inclined at a predetermined angle with respect to the predetermined direction when viewed from the direction vertical to the substrate surface.

4. The semiconductor optical amplifier according to claim 3 , wherein the predetermined angle is an angle equal to or greater than 5° and equal to or smaller than 85°.

5. The semiconductor optical amplifier according to claim 4 , wherein the predetermined angle is an angle other than 45°.

6. The semiconductor optical amplifier according to claim 3 , wherein the predetermined angle is an angle other than 45°.

7. The semiconductor optical amplifier according to claim 1 , wherein the reflection part is an end face of the conductive region inclined at a predetermined angle with respect to the predetermined direction when viewed from the direction vertical to the substrate surface.

8. The semiconductor optical amplifier according to claim 7 , wherein the predetermined angle is an angle equal to or greater than 5° and equal to or smaller than 85°.

9. The semiconductor optical amplifier according to claim 8 , wherein the predetermined angle is an angle other than 45°.

10. The semiconductor optical amplifier according to claim 7 , wherein the predetermined angle is an angle other than 45°.

11. The semiconductor optical amplifier according to claim 1 , further comprising

a first semiconductor multilayer film reflector of a first conductivity type that is formed on the substrate,

an active region on the first semiconductor multilayer film reflector, and

a second semiconductor multilayer film reflector of a second conductivity type on the active region,

wherein the conductive region is configured to include the active region, and

the non-conductive region is an oxidized region or an ion implantation region formed in a part of at least one of the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

12. A light output apparatus comprising:

the semiconductor optical amplifier according to claim 1 ; and

a light collecting part that collects light emitted from the semiconductor optical amplifier.

13. A distance measuring apparatus comprising:

the semiconductor optical amplifier according to claim 1 ;

a light receiving part that receives reflected light, the reflected light being light which is emitted from the semiconductor optical amplifier and is reflected by a measured object; and

a measuring part that measures a distance to the measured object based on the reflected light received by the light receiving part.

Assignments (2)
CHANGE OF NAME Recorded Apr 29, 2021
From: FUJI XEROX CO., LTD.
To: FUJIFILM BUSINESS INNOVATION CORP.
Reel/Frame 056092/0913 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2019
From: HAYAKAWA, JUNICHIRO; MURAKAMI, AKEMI
To: FUJI XEROX CO., LTD.
Reel/Frame 049463/0147 →
Priority Claims (2)
JP JP2018-115845 · Jun 19, 2018 · national
JP JP2019-027828 · Feb 19, 2019 · national
Continuity (1)
Related Publication 20190386465A1 · Dec 19, 2019