Fabrication of high density sensor array

1. A sensor array having a lattice topology, comprising:

a plurality of interconnects comprising an electrically-conductive layer sandwiched between two dielectric layers, the plurality of interconnects defining:

a plurality of first-axis interconnects;

a plurality of second-axis interconnects; and

a plurality of interconnect junctions;

a plurality of sensor nodes, each disposed on an associated interconnect junction defining an associated first-axis line and second-axis line;

a plurality of sensors, each disposed on an associated sensor node;

a primary first-axis interconnect interface, electrically connected to the plurality of first-axis interconnects; and

a primary second-axis interconnect interface, electrically connected to the plurality of second-axis interconnects;

wherein each of the plurality of sensor nodes comprises:

a first electrode, electrically connected to an associated first-axis line;

a second electrode, electrically connected to an associated second-axis line; and

a bypass bridge, electrically isolating the associated second-axis line from the associated first-axis line.

2. The sensor array of claim 1 , wherein the interconnects are flexible, thereby allowing the sensor array to conform to a curved surface profile.

3. The sensor array of claim 1 , wherein:

the electrically-conductive layer comprises at least one of silver, copper, aluminum, gold, platinum, ruthenium, carbon, and/or alloys thereof; and

each of the dielectric layers comprises a cured base material.

4. The sensor array of claim 1 , wherein the bypass bridge comprises:

an electrically-insulating substrate;

a first electrically-conductive trace, disposed on the electrically-insulating substrate;

a dielectric layer, disposed on the first conductive layer; and

a second electrically-conductive trace, disposed on the dielectric layer, the second electrically-conductive trace being electrically isolated from the first electrically-conductive trace.

5. The sensor array of claim 1 , wherein the primary first-axis interconnect interface and the primary second-axis interconnect interface can enable one of the plurality of first-axis interconnects and one of the plurality second-axis interconnects, respectively, thereby interrogating a sensor node associated with the enabled first-axis interconnect and the enabled second-axis interconnect.

6. The sensor array of claim 1 , further comprising:

a secondary first-axis interconnect interface, electrically connected to the plurality of first-axis interconnects; and

a secondary second-axis interconnect interface, electrically connected to the plurality of second-axis interconnects.

7. The sensor array of claim 6 , wherein two of the plurality of sensors can be interrogated at the same time by simultaneously:

enabling one of the plurality of first-axis interconnects by the primary first-axis interconnect interface;

enabling one of the plurality of second-axis interconnects by the primary second-axis interconnect interface;

enabling another of the plurality of first-axis interconnects by the secondary first-axis interconnect interface; and

enabling another of the plurality of second-axis interconnects by the secondary second-axis interconnect interface.

8. The sensor array of claim 6 , wherein the primary and secondary first-axis interconnect interfaces are configured to:

identify a fault on one or more of the plurality of first-axis interconnects; and

interrogate any of the plurality of sensors by enabling an associated first-axis interconnect and an associated second-axis interconnect.

9. The sensor array of claim 6 , wherein the primary and secondary second-axis interconnect interfaces are configured to:

identify a fault on one or more of the plurality of second-axis interconnects; and

interrogate any of the plurality of sensors by enabling an associated first-axis interconnect and an associated second-axis interconnect.

10. The sensor array of claim 1 , wherein the sensor array is additively-manufactured.

11. The sensor array of claim 1 , wherein the sensor array is configured to be disposed on a surface of an asset.

12. The sensor array of claim 1 , wherein each of the plurality of sensors is selected from the group consisting of a piezoelectric sensor, a resistance temperature detector (RTD), a piezoresistive sensor, a micro-electrical mechanical system (MEMS) pressure sensor, and a MEMS accelerometer.

13. A method of interrogating a sensor in a sensor array having a lattice topology, the sensor array comprising:

a plurality of interconnects comprising an electrically-conductive layer sandwiched between two dielectric layers, the plurality of interconnects defining:

a plurality of first-axis interconnects;

a plurality of second-axis interconnects; and

a plurality of interconnect junctions;

a plurality of sensor nodes, each disposed on an associated interconnect junction defining an associated first-axis line and second-axis line;

a plurality of sensors, each disposed on an associated sensor node;

a primary first-axis interconnect interface, electrically connected to the plurality of first-axis interconnects; and

a primary second-axis interconnect interface, electrically connected to the plurality of second-axis interconnects;

wherein each of the plurality of sensor nodes comprises:

a first electrode, electrically connected to an associated first-axis line;

a second electrode, electrically connected to an associated second-axis line; and

a bypass bridge, electrically isolating the associated second-axis line from the associated first-axis line;

the method comprising performing the steps of:

(a) enabling, with the primary first-axis interconnect interface, one of the plurality of first-axis interconnects;

(b) enabling, with the primary second-axis interconnect interface, one of the plurality of second-axis interconnects; and

(c) interrogating one of the plurality of sensors corresponding to the enabled first-axis interconnect and the enabled second-axis interconnect.

14. The method of claim 13 , wherein:

the electrically-conductive layer comprises silver, copper, aluminum, gold, platinum, ruthenium, carbon, and/or alloys thereof; and

each of the dielectric layers comprises a cured base material.

15. The method of claim 13 , wherein the interconnects are flexible, thereby allowing the sensor array to conform to a curved surface profile.

16. The method of claim 13 , wherein the bypass bridge comprises:

an electrically-insulating substrate;

a first electrically-conductive trace, disposed on the electrically-insulating substrate;

a dielectric layer, disposed on the first conductive layer; and

a second electrically-conductive trace, disposed on the dielectric layer, the second electrically-conductive trace being electrically isolated from the first electrically-conductive trace.

17. The method of claim 13 , wherein each of the plurality of sensors is selected from the group consisting of a piezoelectric sensor, a resistance temperature detector (RTD), a piezoresistive sensor, a micro-electrical mechanical system (MEMS) pressure sensor, and a MEMS accelerometer.

18. The method of claim 13 , further comprising performing the steps of:

enabling, with a secondary first-axis interconnect interface electrically connected to the plurality of first-axis interconnects, one of the plurality of first-axis interconnects; and

enabling, with a secondary second-axis interconnect interface electrically connected to the plurality of second-axis interconnects, one of the plurality of second-axis interconnects.

19. The method of claim 18 , further comprising the steps of:

identifying a fault on one or more of the plurality of second-axis interconnects; and

interrogating any of the plurality of sensors by enabling an associated first-axis interconnect and an associated second-axis interconnect.