Semiconductor device
A semiconductor device includes a semiconductor substrate 10 of a first conductivity type, a vertical Hall element 100 provided on the semiconductor substrate 10 , and an excitation conductor 200 provided directly above the vertical Hall element 100 with an intermediation of an insulating film 30 . The vertical Hall element 100 includes a semiconductor layer 101 of a second conductivity type provided on the semiconductor substrate 10 , and a plurality of electrodes 111 through 115 each constituted from a high-concentration second conductivity type impurity region and provided on the surface of the semiconductor layer 101 along a straight line. A ratio W C /W H between a width W C of the excitation conductor 200 and a width W H of each of the plurality of electrodes 111 through 115 satisfies 0.3≤W C /W H ≤1.0.
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type;
a vertical Hall element on the semiconductor substrate; and
an excitation conductor directly above the vertical Hall element with an intermediation of an insulating film,
the vertical Hall element comprising:
a semiconductor layer of a second conductivity type on the semiconductor substrate; and
a plurality of electrodes each constituted from a high-concentration second conductivity type impurity region, and on a surface of the semiconductor layer along a straight line, and
a ratio W C /W H between a width W C of the excitation conductor and a width W H of each of the plurality of electrodes satisfying an inequality 0.3≤W C /W H ≤1.0
wherein a ratio h/W H between a distance h from a center of the vertical Hall element in a substrate depthwise direction to a lower surface of the excitation conductor and the width W H of each of the plurality of electrodes is equal to or less than 0.4.
2. The semiconductor device according to claim 1 , wherein the excitation conductor has a linear shape, and a longitudinal center line of the excitation conductor and a longitudinal center line of the semiconductor layer of the vertical Hall element coincide.