Light emitting element having excellent contact between semiconductor layer and electrode
A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the plurality of p-type conductors in the first direction.
1. A light emitting device comprising:
a sapphire substrate;
a first conductivity type semiconductor layer disposed on the sapphire substrate;
an active layer disposed on the first conductivity type semiconductor layer;
a plurality of p-type conductors disposed on the active layer, and separated from each other;
a first pad disposed on the first conductivity type semiconductor layer; and
a second pad disposed on the plurality of p-type conductors,
wherein the plurality of p-type conductors are arranged in a first direction,
wherein the second pad is spaced apart from the first pad in a second direction,
wherein the second direction is perpendicular to the first direction,
wherein a top surface of each of the plurality of p-type conductors has a rectangular shape,
wherein the rectangular shape of the top surface of each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being larger than the second width,
wherein the plurality of p-type conductors are evenly spaced apart by a distance in the first direction, the distance being less than the first width of the rectangular shape of the top surface of each of the plurality of p-type conductors in the first direction,
wherein the second pad is electrically connected to each of the plurality of p-type conductors and fully covers the top surface of each of the plurality of p-type conductors,
wherein a top surface area of the second pad is larger than a top surface area of the first pad, and
wherein the first width of each p-type conductor is in a range of 20 μm to 400 μm.
2. The light emitting device of claim 1 ,
wherein the first width of the rectangular shape of the top surface of each of the plurality of p-type conductors is equal to each other,
wherein the second width of the rectangular shape of the top surface of each of the plurality of p-type conductors is equal each other, and
wherein the second pad covers an entire area of the top surface of each of the plurality of p-type conductors.
3. The light emitting device of claim 1 , wherein the second pad includes a plurality of concave portions and a plurality of convex portions.
4. The light emitting device of claim 3 , wherein the plurality of convex portions of the second pad overlap with the plurality of p-type conductors, respectively.
5. The light emitting device of claim 3 , wherein the active layer is configured to emit light having a highest intensity in a wavelength less than 290 nm.
6. The light emitting device of claim 1 , wherein the first conductivity type semiconductor layer includes Si, and
wherein each of the plurality of p-type conductors includes Mg.
7. The light emitting device of claim 6 , further comprising:
a second conductivity type semiconductor layer disposed between the plurality of p-type conductors and the active layer.
8. The light emitting device of claim 7 , wherein the second conductivity type semiconductor layer includes Al x Ga (1-x) N and a Mg dopant, where 0<x<1, and
wherein the plurality of p-type conductors include p-GaN.
9. The light emitting device of claim 3 , wherein each of the plurality of concave portions is disposed between two adjacent convex portions among the plurality of convex portions.
10. The light emitting device of claim 1 , wherein the second width of each of the plurality of p-type conductors is equal to each other.
11. The light emitting device of claim 10 , further comprising:
a first adhesive member disposed on the first pad; and
a second adhesive member disposed on the second pad,
wherein the second adhesive member directly contacts the plurality of convex portions of the second pad.
12. A light emitting device package comprising:
a sapphire substrate;
a first conductivity type semiconductor layer disposed on the sapphire substrate;
an active layer disposed on the first conductivity type semiconductor layer;
a plurality of conductors disposed on the active layer, and separated from each other;
a first pad disposed on the first conductivity type semiconductor layer; and
a second pad disposed on the plurality of conductors,
wherein the plurality of conductors are arranged in a first direction,
wherein the second pad is spaced apart from the first pad in a second direction,
wherein the second direction is perpendicular to the first direction,
wherein the plurality of conductors include a plurality of top surfaces, respectively, each of the plurality of top surfaces having a rectangular shape,
wherein each of the plurality of top surfaces of the plurality of conductors has a first width in the first direction and a second width in the second direction, the first width being larger than the second width,
wherein the plurality of top surfaces of the plurality of conductors are evenly spaced apart from each other in the first direction by a distance,
wherein the first width of each of the plurality of top surfaces of the plurality of conductors in the first direction is greater than the distance,
wherein the second pad covers the plurality of top surfaces of the plurality of conductors entirely, and
wherein the first width of each of the plurality of top surfaces is in a range of 20 μm to 400 μm.
13. The light emitting device package of claim 12 , further comprising:
a second conductivity type semiconductor layer disposed between the plurality of conductors and the active layer,
wherein the second conductivity type semiconductor layer includes Al x Ga (1-x) N and a Mg dopant, where 0<x<1.
14. The light emitting device package of claim 12 , further comprising:
a substrate;
wherein the first pad and second pad are disposed on the substrate,
wherein a first conductive adhesive member is disposed between the first pad and the substrate, and
wherein a second conductive adhesive member is disposed between the second pad and the substrate.
15. The light emitting device package of claim 14 , wherein the second pad includes a plurality of concave portions and a plurality of convex portions, and
wherein the second conductive adhesive member directly contacts the plurality of convex portions of the second pad.
16. The light emitting device package of claim 14 , wherein the active layer is configured to emit light having a highest intensity in a wavelength less than 290 nm.
17. The light emitting device package of claim 12 ,
wherein the second pad overlaps the rectangular shape of each of the plurality of top surfaces of the plurality of conductors, entirely.
18. The light emitting device package of claim 17 ,
wherein the second width of each of the pluarlity of top surfaces of the plurality of conductors is equal to each other.
19. The light emitting device package of claim 18 , wherein the first pad includes a width in the second direction, and
wherein the width is in a range of 20 μm to 400 μm.