Polycrystalline diamond compact including a non-uniformly leached polycrystalline diamond table and applications therefor
In an embodiment, a polycrystalline diamond compacts (“PDC”) includes a substrate and a polycrystalline diamond (“PCD”) table bonded to the substrate. The PCD table defines an upper surface and at least one peripheral surface. The PCD table includes a plurality of bonded diamond grains. The PCD table includes a first region adjacent to the substrate that includes a metallic constituent disposed interstitially between the bonded diamond grains thereof, and a leached second region extending inwardly from the upper surface and the at least one peripheral surface that is depleted of the metallic constituent. The leached second region exhibits a leach depth profile having a maximum leach depth that is measured from the upper surface. A leach depth of the leach depth profile decreases with lateral distance from a central axis of the PCD table and toward the at least one peripheral surface.
1. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table defining a substantially planar upper surface, and at least one peripheral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including:
a first region adjacent to the substrate that includes a metallic constituent disposed interstitially between the bonded diamond grains thereof; and
a leached second region extending inwardly from the substantially planar upper surface to the first region with the first region positioned between the leached second region and the substrate, and inwardly from the at least one peripheral surface, the leached second region depleted of the metallic constituent, the leached second region including:
a first leached portion that exhibits a first leach depth; and
a second leached portion that exhibits a second leach depth that is about 5 percent to about 60 percent less than the first leach depth.
2. The polycrystalline diamond compact of claim 1 , wherein the first leached portion includes a non-peripheral portion of the leached second region and the second leached portion includes a peripheral portion of the leached second region.
3. The polycrystalline diamond compact of claim 2 , wherein the first leached portion is generally centrally positioned in the leached second region and the second leached portion includes a peripheral portion of the leached second region.
4. The polycrystalline diamond compact of claim 2 , wherein the polycrystalline diamond table defines a chamfer extending between the substantially planar upper surface and the at least one peripheral surface and the leached second region extends inwardly from the chamfer.
5. The polycrystalline diamond compact of claim 4 , wherein the first leached depth is measured inwardly from the substantially planar upper surface and the second leached depth is measured inwardly from at least one of the chamfer or the at least one peripheral surface.
6. The polycrystalline diamond compact of claim 1 , wherein the second leach depth is about 5 percent to about 50 percent less than the first leach depth.
7. The polycrystalline diamond compact of claim 1 , wherein the second leach depth is about 25 percent to about 50 percent less than the first leach depth.
8. The polycrystalline diamond compact of claim 1 , wherein the second leach depth is about 5 percent to about 15 percent less than the first leach depth.
9. The polycrystalline diamond compact of claim 1 , wherein the second leach depth is about 8 percent to about 12 percent less than the first leach depth.
10. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table defining a substantially planar upper surface, at least one peripheral surface, and a chamfer extending between the substantially planar upper surface and the at least one peripheral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including:
a first region adjacent to the substrate that includes a metallic constituent disposed interstitially between the bonded diamond grains thereof; and
a leached second region extending inwardly from the substantially planar upper surface to the first region with the first region positioned between the leached second region and the substrate, inwardly from the chamfer, and inwardly from the at least one peripheral surface, the leached second region depleted of the metallic constituent, the leached second region including:
a first leached portion adjacent to the chamfer that exhibits a first leach depth; and
a second leached portion extending along and adjacent to the at least one peripheral surface that exhibits a second leach depth that is about 5 percent to about 60 percent less than the first leach depth.
11. The polycrystalline diamond compact of claim 10 , wherein the first leached portion includes a non-peripheral portion of the leached second region and the second leached portion includes a peripheral portion of the leached second region.
12. The polycrystalline diamond compact of claim 11 , wherein the first leached depth is measured inwardly from the substantially planar upper surface and the second leached depth is measured inwardly from at least one of the chamfer or the at least one peripheral surface.
13. The polycrystalline diamond compact of claim 10 , wherein the second leach depth is about 5 percent to about 50 percent less than the first leach depth.
14. The polycrystalline diamond compact of claim 10 , wherein the second leach depth is about 25 percent to about 50 percent less than the first leach depth.
15. The polycrystalline diamond compact of claim 10 , wherein the second leach depth is about 5 percent to about 15 percent less than the first leach depth.
16. The polycrystalline diamond compact of claim 10 , wherein the second leach depth is about 8 percent to about 12 percent less than the first leach depth.
17. A rotary drill bit, comprising:
a bit body configured to engage a subterranean formation; and
a plurality of polycrystalline diamond cutting elements affixed to the bit body, at least one of the plurality of polycrystalline diamond cutting elements including:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table defining a substantially planar upper surface, and at least one peripheral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including:
a first region adjacent to the substrate that includes a metallic constituent disposed interstitially between the bonded diamond grains thereof; and
a leached second region extending inwardly from the substantially planar upper surface to the first region with the first region positioned between the leached second region and the substrate, and inwardly from the at least one peripheral surface, the leached second region depleted of the metallic constituent, the leached second region including:
a first leached portion that exhibits a first leach depth; and
a second leached portion that exhibits a second leach depth that is about 5 percent to about 60 percent less than the first leach depth.
18. The rotary drill bit of claim 17 , wherein the first leached portion includes a non-peripheral portion of the leached second region and the second leached portion includes a peripheral portion of the leached second region.
19. The rotary drill bit of claim 18 , wherein the polycrystalline diamond table defines a chamfer extending between the substantially planar upper surface and the at least one peripheral surface and the leached second region extends inwardly from the chamfer.
20. The rotary drill bit of claim 19 , wherein the first leached depth is measured inwardly from the substantially planar upper surface and the second leached depth is measured inwardly from at least one of the chamfer or the at least one peripheral surface.