Light-emitting device including quantum dots
A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.
1. A light emitting device comprising:
a pair of electrodes comprising
an anode, and
a cathode, wherein at least one of the anode and the cathode comprises indium tin oxide;
a layer comprising a light emissive material comprising quantum dots provided between the electrodes;
a layer comprising an inorganic material provided between the emissive layer and the cathode, wherein the inorganic material comprises a zinc oxide;
a layer comprising a hole transporting material provided between the emissive layer and the anode; and
a layer comprising an organic hole-injection material provided between the anode and the layer comprising the hole transporting material,
wherein the layer comprising the inorganic material comprises a stratified structure comprising first and second horizontal zones having different conductivities from each other, and
wherein:
the first horizontal zone is at a lower portion of the layer more remote from the emissive layer, the first horizontal zone comprising an electron injecting material, and
the second horizontal zone is at an upper portion of the layer nearer the emissive layer, the second horizontal zone comprising an electron transporting material,
wherein the electron injecting material comprises a first n-doped inorganic material, and the electron transporting material comprises a second n-doped inorganic material having a lower concentration of n-type doping than the first n-doped inorganic material.
2. The light emitting device in accordance with claim 1 , wherein the hole transporting material comprises an organic material and is different from the organic hole-injection material.
3. The light-emitting device in accordance with claim 1 , wherein the zinc oxide is crystalline or amorphous.
4. The light emitting device in accordance with claim 1 , wherein the layer comprising the inorganic material further comprises a second metal oxide.
5. The light emitting device in accordance with claim 1 , wherein the layer comprising the inorganic material comprises a mixture of the zinc oxide and a titanium dioxide.
6. The light emitting device in accordance with claim 1 , wherein the hole transporting material comprises an organic material comprising an organic chromophore.
7. The light emitting device in accordance with claim 1 , wherein the first n-doped inorganic material comprises zinc oxide, titanium dioxide, or a combination thereof.
8. The light emitting device in accordance with claim 1 , wherein the second n-doped inorganic material comprises zinc oxide, titanium dioxide, or a combination thereof.
9. The light emitting device in accordance with claim 1 , wherein the quantum dots are capable of emitting visible light.
10. The light emitting device in accordance with claim 1 , wherein the emissive layer comprises a quantum dots selected from a red-emitting quantum dot, a blue-emitting quantum dot, a green-emitting quantum dot, a yellow-emitting quantum dot, or a combination thereof.
11. The light emitting device in accordance with claim 1 , wherein the zinc oxide is doped with a dopant species to enhance its electron transport characteristics.
12. The light emitting device in accordance with claim 1 , wherein the layers are formed in the following sequential order: the cathode, the layer comprising the inorganic material comprising zinc oxide, the light emissive layer comprising quantum dots, the layer comprising the hole transporting material, the layer comprising the organic hole injection material, and the anode, and wherein the organic hole injection material is p-type doped.
13. The light emitting device in accordance with claim 1 , wherein the light emitting device has a turn-on voltage that is less than or equal to 1240/λ, volts, wherein λ represents the wavelength (nm) of light emitted by the emissive layer.
14. A light emitting device comprising:
a pair of electrodes comprising
an anode, and
a cathode, wherein at least one of the anode and the cathode comprises indium tin oxide;
a layer comprising a light emissive material comprising quantum dots provided between the electrodes;
a layer comprising an inorganic material provided between the emissive layer and the cathode, wherein the inorganic material comprises a zinc oxide;
a layer comprising a hole transporting material provided between the emissive layer and the anode; and
a layer comprising a hole-injection material provided between the anode and the layer comprising the hole transporting material,
wherein the layer comprising the inorganic material comprises a stratified structure comprising first and second horizontal zones having different conductivities from each other,
wherein:
the first horizontal zone is at a lower portion of the layer more remote from the emissive layer, the first horizontal zone comprising an electron injecting material; and
the second horizontal zone is at an upper portion of the layer nearer the emissive layer, the second horizontal zone comprising an electron transporting material;
wherein the electron injecting material comprises a first n-doped inorganic material, and the electron transporting material comprises a second n-doped inorganic material having a lower concentration of n-type doping than the first n-doped inorganic material, and
wherein the light emitting device has a turn-on voltage that is less than or equal to 1240/λ volts, wherein λ represents the wavelength (nm) of light emitted by the emissive layer.
15. The light emitting device in accordance with claim 14 , wherein the first n-doped inorganic material comprises zinc oxide, titanium dioxide, or a combination thereof.
16. The light emitting device in accordance with claim 14 , wherein the second n-doped inorganic material comprises zinc oxide, titanium dioxide, or a combination thereof.
17. The light emitting device in accordance with claim 14 , wherein the layer comprising the inorganic material comprises a mixture of the zinc oxide and a titanium oxide.
18. A light emitting device comprising, in combination,
a cathode,
a layer comprising a material capable of transporting and injecting electrons comprising a zinc oxide,
an emissive layer comprising quantum dots having a core/shell structure,
a layer comprising a material capable of transporting holes comprising an organic compound,
a layer comprising a hole injection material which is different from the organic compound, and
an anode, and
wherein the hole injection material comprises a p-type organic material capable of transporting holes,
wherein the device has a turn-on voltage that is less than 1240/λ volts,
wherein λ represents a wavelength (nm) of light emitted by the emissive layer.
19. The light emitting device in accordance with claim 18 , wherein the p-type organic hole injection material comprises PEDOT:PSS, LG-101, 4, 4′, 4″-tris(diphenylamino)triphenylamine (TDATA) that is doped with tetrafluoro-tetracyano-quinodimethane (F4-TCNQ), a p-doped phthalocyanine, N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′biphenyl-4,4″diamine (alpha-NPD) doped with F4-TCNQ, or a combination thereof.
20. The light emitting device in accordance with claim 18 , wherein the layer comprising the material capable of transporting and injecting electrons comprises
a first zone at a lower portion of the layer more remote from the emissive layer, the first zone comprising an electron injecting material, and
a second zone at an upper portion of the layer nearer the emissive layer, the second zone comprising an electron transporting material,
wherein the electron injecting material comprises a first n-doped inorganic material, and the electron transporting material comprises a second n-doped inorganic material having a lower concentration of n-type doping than the first n-doped inorganic material.
21. The light emitting device in accordance with claim 18 , wherein the layer comprising the material capable of transporting and injecting electrons comprises an n-doped zinc oxide.
22. The light emitting device in accordance with claim 18 , the cathode comprises indium tin oxide and
wherein the layers are in the following sequential order: the cathode, the layer comprising the material capable of transporting and injecting electrons comprising the zinc oxide, the emissive layer comprising quantum dots, the layer comprising the material capable of transporting holes, the layer comprising the hole injection material, and the anode.
23. The light emitting device in accordance with claim 18 , wherein the layer comprising the material capable of transporting and injecting electrons comprises a mixture of the zinc oxide and a titanium oxide.