Quantum well placement in a tunable VCSEL
Quantum well designs for tunable VCSELs are disclosed that are tolerant of the wavelength shift. Specifically, the active region has even number of substantially uniformly spaced (¼ of the center wavelength in the semiconducting material) quantum wells.
1. A tunable vertical cavity surface emitting laser (VCSEL) with an active region with at least one pair of quantum wells, wherein the quantum wells in each pair of the quantum wells are spaced from each other by a ¼ of a center wavelength of a tuning range of the VCSEL in a semiconducting material of the active region.
2. The VCSEL of claim 1 , wherein the center wavelength is between 950 and 1150 nanometers.
3. The VCSEL of claim 1 , wherein the center wavelength is about 1050 nanometers.
4. The VCSEL of claim 1 , further comprising at least three pairs of quantum wells wherein the spacing between the quantum wells of each pair is ¼ of the center wavelength in the semiconducting material of the active region.
5. The VCSEL of claim 1 , comprising:
a membrane device; and
a half VCSEL device containing the active region.
6. The VCSEL of claim 5 , wherein the membrane device is bonded to the half VCSEL device.
7. The VCSEL of claim 1 , wherein a polarization is controlled.
8. The VCSEL of claim 1 , comprising a distributed Bragg reflector on one side of the active region.
9. The VCSEL of claim 8 , wherein the distributed Bragg reflector is constructed from SiO 2 /Ta 2 O 5 .
10. A tunable vertical cavity surface emitting laser (VCSEL) with an active region with at least two pairs of quantum wells, wherein at a center wavelength of a tuning range, quantum wells of the active regions are located on either side of an antinode of a standing wave inside the VCSEL, wherein a distance between a last quantum well of the active region is spaced from a beginning of a semiconductor distributed Bragg reflector by less than twice a distance between the quantum wells, wherein a spacing between the quantum wells of each pair is ¼ of the center wavelength in a semiconducting material of the active region.
11. The VC SEL of claim 10 , wherein the center wavelength is between 950 and 1150 nanometers.
12. The VCSEL of claim 10 , wherein the center wavelength is about 1050 nanometers.
13. The VCSEL of claim 10 , further comprising at least three pairs of quantum wells wherein the spacing between the quantum wells of each pair is ¼ of the center wavelength in the semiconducting material of the active region.
14. The VCSEL of claim 10 , comprising:
a membrane device; and
a half VCSEL device containing the active region.
15. The VCSEL of claim 14 , wherein the membrane device is bonded to the half VCSEL device.
16. The VCSEL of claim 10 , wherein a polarization is controlled.
17. The VCSEL of claim 10 , comprising a distributed Bragg reflector on one side of the active region.
18. The VCSEL of claim 17 , wherein the distributed Bragg reflector is constructed from SiO 2 /Ta 2 O 5 .