Method of forming a semiconductor device and structure therefor
In an embodiment, a semiconductor device includes a resistor that overlies a doped region of the semiconductor device. The resistor is formed as an elongated element that is formed into a pattern of a spiral. An embodiment of the pattern of the resistor includes a plurality of revolutions from the starting point to an ending point. The resistor material has one of a separation distance between adjacent revolutions that increases with distance along a periphery of the resistor material or a width of the resistor material that increases with distance along the periphery of the resistor material.
1. A method of forming a resistor of a semiconductor device comprising:
providing a semiconductor substrate having a first conductivity type;
forming a first doped region of a second conductivity type on a first portion of the semiconductor substrate;
forming a second doped region of the second conductivity type in the semiconductor substrate and spaced apart from the first doped region;
forming an insulator overlying the first doped region;
forming a resistor overlying the insulator and the first doped region including forming a resistor material as an elongated element that is formed in a pattern of either a substantially circular spiral or a substantially polygonal spiral having curved corners having an arc shape, the pattern extending from a first point at an interior of the pattern in a plurality of revolutions that increase in distance from the first point to an ending point, including forming the resistor material to have a width of the resistor material that increases with distance along a path of the resistor material, and a separation distance between adjacent revolutions that increases with increasing distance along the path.
2. The method of claim 1 including forming the first point electrically coupled to the first doped region.
3. The method of claim 1 further including forming the second doped region as a source region of a transistor.
4. The method of claim 1 further including forming a portion of the first doped region as a source region of a junction field effect transistor.
5. The method of claim 1 further including forming the separation distance between inside edges of adjacent revolutions wherein the inside edges face toward the starting point.
6. The method of claim 1 further including forming the substantially polygonal spiral as one of a rectangular spiral having the curved corners, a pentagon spiral having the curved corners, or a hexagon spiral having the curved corners.
7. The method of claim 1 further including forming the resistor material to include polysilicon.
8. A method of forming a resistor of a semiconductor device comprising:
providing a semiconductor substrate having a first conductivity type;
forming a first doped region of a second conductivity type on a first portion of the semiconductor substrate;
forming a second doped region of the second conductivity type in the semiconductor substrate and spaced apart from the first doped region;
forming an insulator overlying the first doped region;
forming a resistor overlying the insulator and the first doped region including forming a resistor material as an elongated element that is formed in a pattern of either a substantially circular spiral or a substantially polygonal spiral having curved corners having an arc shape, the pattern extending from a first point at an interior of the pattern in a plurality of revolutions that increase in distance from the first point to an ending point, including forming the resistor material to have a separation distance between adjacent revolutions that increases with distance substantially along an entire path of the resistor material from the ending point to the first point.
9. A method of forming a resistor of a semiconductor device comprising:
providing a semiconductor substrate having a first conductivity type;
forming a first doped region of a second conductivity type on a first portion of the semiconductor substrate;
forming an insulator overlying the first doped region; and
forming a resistor overlying the insulator and the first doped region including forming a resistor material as an elongated element that is formed in a pattern of a spiral, the pattern extending from a first point at an interior of the pattern in a plurality of revolutions from the first point to an ending point, including forming the resistor material to have a separation distance between adjacent revolutions that increases with distance substantially along an entire path of the resistor material from the ending point to the first point.
10. The method of claim 9 including forming the pattern as either a substantially circular spiral or a substantially polygonal spiral having curved corners having an arc shape.
11. The method of claim 9 including forming the pattern to overlie the first doped region.