LED package structure with phosphor encapsulant layer
View Patent ↗An LED package structure with phosphor encapsulant layer includes an LED chip, a first encapsulant layer, and a second encapsulant layer; the first encapsulant layer covers the LED chip mixed with a first type phosphor having an excitation emission peak wavelength in a first wavelength range; the second encapsulant layer covers a first encapsulant layer mixed with a second type phosphor having an excitation emission peak wavelength in a second wavelength range. At least one of the first type phosphor and the second type phosphor is distributed in the corresponding first encapsulant layer or the corresponding second encapsulant layer in a state where the bottom concentration is higher than the top concentration.
1. An LED package structure with a phosphor encapsulant layer, comprising:
an LED chip;
a first encapsulant layer mixed with a first type phosphor, the first type phosphor being excited to have an emission peak wavelength in a first wavelength range, and the first encapsulant layer covering the LED chip; and
a second encapsulant layer mixed with a second type phosphor, the second type phosphor being excited to have an emission peak wavelength in a second wavelength range, the second wavelength range being different from the first wavelength range, and the second encapsulant layer covering the first encapsulant layer;
wherein at least one of the first type phosphor and the second type phosphor is distributed in the corresponding first encapsulant layer or the second encapsulant layer, in a state where a bottom concentration of the at least one of the first type phosphor and the second type phosphor in the corresponding first encapsulant layer or the second encapsulant layer is higher than a top concentration of the at least one of the first type phosphor and the second type phosphor in the corresponding first encapsulant layer or the second encapsulant layer;
wherein a relative spectral energy distribution curve of a light emitted by the LED package structure has a slope change rate greater than 4 in a wavelength range of 510 nm to 585 nm.
2. The LED package structure with a phosphor encapsulant layer according to claim 1 , wherein a concentration of the first type phosphor in the first encapsulant layer decreases from a bottom of the first encapsulant layer to a top of the first encapsulant layer.
3. The LED package structure with a phosphor encapsulant layer according to claim 2 , wherein the first type phosphor in a height range of 30% measured upward from the bottom of the first encapsulant layer accounts for more than 50% of a total amount of the first type phosphor.
4. The LED package structure with a phosphor encapsulant layer according to claim 3 , wherein the LED package structure further comprises a conductive layer that is electrically connected to the LED chip, and wherein the first type phosphor at the bottom of the first encapsulant layer forms a thermal shield layer covering the conductive layer.
5. The LED package structure with a phosphor encapsulant layer according to claim 2 , wherein the LED package structure further comprises a conductive layer that is electrically connected to the LED chip, and wherein the first type phosphor deposited at the bottom of the first encapsulant layer forms a thermal shield layer covering the conductive layer.
6. The LED package structure with a phosphor encapsulant layer according to claim 1 , wherein a concentration of the second type phosphor in the second encapsulant layer decreases from a bottom of the second encapsulant layer to a top of the second encapsulant layer.
7. The LED package structure with a phosphor encapsulant layer according to claim 6 , wherein the concentration of the second type phosphor in a height range of 30% measured upward from a bottom of the second encapsulant layer accounts for more than 50% of a total amount of the second type phosphor.
8. The LED package structure with a phosphor encapsulant layer according to claim 1 , wherein in the relative spectral energy distribution curve of the light emitted by the LED package structure, a minimum wavelength in which a spectral radiance intensity exceeds 0.5 is greater than 540 nm, and a difference between a maximum wavelength in which the spectral radiance intensity exceeds 0.5 and the minimum wavelength in which the spectral radiance intensity exceeds 0.5 is less than 140 nm.
9. The LED package structure with a phosphor encapsulant layer according to claim 1 , wherein the first wavelength range is between 600 nm and 660 nm, and the first type phosphor includes one or more phosphor materials having emission peak wavelengths within the first wavelength range.
10. The LED package structure with a phosphor encapsulant layer according to claim 1 , wherein the second wavelength range is between 500 nm and 575 nm, and the second type phosphor includes one or more phosphor materials having an emission peak wavelength in the second wavelength range.
11. The LED package structure with a phosphor encapsulant layer according to claim 1 , wherein the first wavelength range is between 500 nm and 575 nm, and the first type phosphor includes one or more phosphor materials having emission peak wavelengths within the first wavelength range.
12. The LED package structure with a phosphor encapsulant layer according to claim 1 , wherein the second wavelength range is between 600 nm to 660 nm, and the second type phosphor includes one or more phosphor materials having an emission peak wavelength in the second wavelength range.