METHOD OF MANUFACTURING CISCSP WITHOUT DAM

1 . A semiconductor package comprising:

a die comprising a first side and a second side;

at least two through silicon vias (TSVs) extending from a first side of the die to the second side of the die, the at least two TSVs positioned on opposite sides of an active area of the die;

a glass lid coupled to a second side of the die through adhesive, the adhesive positioned over the at least two TSVs;

a molding compound comprised around a perimeter of the die, extending from the first side of the die to at least the glass lid.

2 . The semiconductor package of claim 1 , further comprising a redistribution layer (RDL) on a first side of the die.

3 . The semiconductor package of claim 1 , further comprising a ball grid array coupled to the RDL.

4 . The semiconductor package of claim 1 , further comprising a die pad between the adhesive and the TSV.

5 . The semiconductor package of claim 1 , wherein the glass lid comprises a cavity forming a gap between the active area of the die and the glass lid.

6 . A method for forming a semiconductor package, the method comprising:

providing a glass cover comprising a plurality of cavities formed therein on a first side of the glass cover;

applying adhesive to the glass cover on a first side and a second side of each of the plurality of cavities;

coupling a plurality of die to each of the plurality of cavities through the adhesive;

applying a molding compound over the plurality of die and to the first side of the glass cover;

after applying the molding compound, forming at least two through silicon vias (TSVs) through each of the plurality of die, the TSVs positioned around an active area of the die;

forming a redistribution layer (RDL) on the first side of each of the plurality of die, the RDL extending over the TSVs; and

singulating each of the plurality of die to form a plurality of semiconductor packages.

7 . The method of claim 6 , further comprising applying a ball grid array to the RDL over each of the plurality of die.

8 . The method of claim 6 , wherein forming at least two TSVs through each of the plurality of die and forming a redistribution layer on the first side of each of the plurality of die occurs before applying the molding compound.

9 . The method of claim 6 , wherein applying the adhesive further comprises applying over a die pad.

10 . The method of claim 9 , further comprising thinning the molding compound and a first side of each of the plurality of die.

11 . The method of claim 6 , wherein the each of the plurality of die is an image sensor.

12 . The method of claim 6 , further comprising filling at least a portion of the TSVs with the adhesive.

13 . A method for forming a semiconductor package, the method comprising:

providing a glass cover with a plurality of cavities on a first side of the glass cover;

applying adhesive to the glass cover between each of the plurality of cavities;

coupling a semiconductor wafer to the glass cover over the plurality of cavities, wherein each of a plurality of die correspond with each of the plurality of cavities;

thinning a first side of the semiconductor wafer;

forming at least two through silicon vias (TSVs) through each of the plurality of die, the TSVs positioned around an active area of the die;

forming a redistribution layer (RDL) on the first side of each of the plurality of die, the RDL extending over the TSVs;

performing a first cut between each of the plurality of die;

applying a molding compound over the plurality of die and extending to the first side of the glass cover; and

performing a second cut between each of the plurality of die.

14 . The method of claim 13 , wherein performing the first cut extends only through the semiconductor wafer.

15 . The method of claim 13 , wherein performing the first cut extends through the semiconductor wafer and the glass cover between the plurality of die and plurality of cavities, respectively.

16 . The method of claim 13 , wherein performing the second cut singulates each of the plurality of die to form a plurality of semiconductor packages.

17 . The method of claim 13 , further comprising applying a ball grid array to a first side of each of the plurality of die.

18 . The method of claim 13 , further comprising coupling a second side of the glass cover to a carrier wafer.

19 . The method of claim 15 , further comprising removing each of the plurality of semiconductor wafers from the carrier wafer after performing the second cut.