High electron mobility transistor and methods for manufacturing the same
A high electron mobility transistor, includes a substrate; a channel layer formed on the substrate; a barrier layer formed on the channel layer; a source electrode and a drain electrode formed on the barrier layer; a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or zinc oxide; and a gate electrode formed on the depletion layer.
1. A high electron mobility transistor, comprising:
a substrate;
a channel layer formed on the substrate;
a barrier layer formed on the channel layer;
a source electrode and a drain electrode formed on the barrier layer;
a depletion layer formed on the barrier layer and between the source electrode and the drain electrode, wherein a material of the depletion layer comprises boron nitride or hexagonal zinc oxide; and
a gate electrode formed on the depletion layer.
2. The high electron mobility transistor according to claim 1 , further comprising a dielectric layer formed on the barrier layer and located between the depletion layer and both the source electrode and the drain electrode.
3. The high electron mobility transistor according to claim 1 , wherein the material of the depletion layer comprises a single crystal structure.
4. The high electron mobility transistor according to claim 1 , wherein the boron nitride of the depletion layer comprises hexagonal boron nitride (h-BN).
5. The high electron mobility transistor according to claim 1 , wherein the material of the depletion layer is doped with impurities.
6. The high electron mobility transistor according to claim 5 , wherein the material of the depletion layer comprises boron nitride and the impurities comprise Mg, Be, Zn or Cd.
7. The high electron mobility transistor according to claim 6 , wherein the impurities comprise Mg and a concentration of Mg in the boron nitride is between 1×10 19 atoms/cm 3 to 1×10 21 atoms/cm 3 .
8. The high electron mobility transistor according to claim 5 , wherein the material of the hexagonal zinc oxide comprises the impurities selected from at least one of N and P.
9. The high electron mobility transistor according to claim 1 , wherein the barrier layer comprises a recess and the depletion layer is in the recess.
10. A method of manufacturing a high electron mobility transistor, comprising:
forming a channel layer;
forming a barrier layer on the channel layer;
forming a depletion layer on the barrier;
forming a source electrode and a drain electrode on the barrier layer; and
forming a gate electrode on the depletion layer;
wherein a material of the depletion layer comprises boron nitride or hexagonal zinc oxide.
11. The method according to claim 10 , wherein the boron nitride of the depletion layer comprises hexagonal boron nitride and the method further comprises doping impurities in the hexagonal boron nitride; and
wherein the impurities comprise Mg, Be, Zn or Cd.
12. The method according to claim 11 , further comprising activating the impurities at a temperature between 600° C. and 800° C.
13. The method according to claim 11 , wherein the impurities comprise Mg and a concentration of Mg in the hexagonal boron nitride is between 1 x10 19 atoms/cm 3 to 1×10 21 atoms/cm 3 .
14. The method according to claim 10 , further comprising doping impurities in the hexagonal zinc oxide,
wherein the impurities comprise N or P.
15. The method according to claim 10 , further comprising removing a portion of the barrier layer to form a recess in the barrier layer; and forming the depletion layer in the recess.