IP Library Granted Patent US 10,886,703
Granted Patent B1
US 10,886,703 · App. 16/455,051 · Granted Jan 5, 2021

LED DBR structure with reduced photodegradation

Inventors: Ken Shimizu (Sunnyvale, CA); Hisashi Masui (San Jose, CA); Ted Wangensteen (San Jose, CA)
Assignee: Lumileds LLC
H01S5/222H01S5/18341H01S5/18361G02F2201/346
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Quick Facts
Patent No.
US 10,886,703
App. No.
16/455,051
Granted
Jan 5, 2021
Kind
B1
Abstract

A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

Claims (23)

1. A DBR structure on a substrate, comprising:

high refractive index layers each comprising titanium oxide (TiO 2 ); and

low refractive index layers each having a high carbon region and at least one low carbon region that contacts at least one of the high refractive index layers.

2. The DBR structure of claim 1 , wherein the high refractive index layers and the low refractive index layers are stacked to a thickness of less than 10 microns.

3. The DBR structure of claim 1 , wherein each of the respective layers of the high refractive index layers and the low refractive index layers have a thickness of less than 0.2 microns.

4. The DBR structure of claim 1 , wherein each of the low refractive index layers further comprises at least one of Al 2 O 3 and SiO 2 .

5. The DBR structure of claim 1 , wherein the high carbon region of the low refractive index layers further comprises Al 2 O 3 formed from an organometallic precursor.

6. The DBR structure of claim 1 , wherein the high carbon region of the low refractive index layers further comprises Al 2 O 3 formed from Trimethyl Aluminum.

7. The DBR structure of claim 1 , wherein the low carbon region of the low refractive index layers further comprises Al 2 O 3 formed from a halide precursor.

8. The DBR structure of claim 1 , wherein the low carbon region of the low refractive index layers further comprises Al 2 O 3 formed from AlCl 3 .

9. The DBR structure of claim 1 , wherein the substrate is sapphire.

10. An ALD process for forming a DBR structure on a substrate, comprising the steps of:

depositing a first low refractive index layer having a high carbon region;

depositing a first low refractive index layer with a low carbon region that contacts the high carbon region;

depositing a high refractive index layer comprising titanium oxide (TiO 2 ) that contacts the low carbon region of the first low refractive index layer;

depositing a second low refractive index layer with a low carbon region that contacts the high refractive index layer; and

depositing a second low refractive index layer having a high carbon region.

11. An ALD process for forming a DBR structure on a substrate of claim 10 , wherein the first and second low refractive index layers further comprise Al 2 O 3 .

12. An ALD process for forming a DBR structure on a substrate of claim 10 , wherein the high carbon region of the first and second low refractive index layers further comprises Al 2 O 3 formed from an organometallic precursor.

13. An ALD process for forming a DBR structure on a substrate of claim 10 , wherein the high carbon region first and second low refractive index layers further comprises Al 2 O 3 formed from Trimethyl Aluminum.

14. An ALD process for forming a DBR structure on a substrate of claim 10 , wherein the low carbon region of the first and second low refractive index layers further comprises Al 2 O 3 formed from a halide precursor.

15. An ALD process for forming a DBR structure on a substrate of claim 10 , wherein the low carbon region of the first and second low refractive index layers further comprises Al 2 O 3 formed from AlCl 3 .

16. An ALD process for forming a DBR structure on a substrate of claim 10 , wherein the substrate is sapphire.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2025
From: LUMILEDS LLC
To: LUMILEDS SINGAPORE PTE. LTD.
Reel/Frame 071888/0086 →
RELEASE OF SECURITY INTEREST Recorded Jan 29, 2025
From: SOUND POINT AGENCY LLC
To: LUMILEDS LLC; LUMILEDS HOLDING B.V.
Reel/Frame 070046/0001 →
SECURITY INTEREST Recorded Jan 5, 2023
From: LUMILEDS LLC; LUMILEDS HOLDING B.V.
To: SOUND POINT AGENCY LLC
Reel/Frame 062299/0338 →
PATENT SECURITY AGREEMENT Recorded Dec 9, 2022
From: LUMILEDS, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 062114/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2020
From: WANGENSTEEN, TED
To: LUMILEDS LLC
Reel/Frame 054601/0797 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2020
From: LUMILEDS HOLDING B.V.
To: LUMILEDS LLC
Reel/Frame 052101/0350 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 23, 2019
From: SHIMIZU, KEN; MASUI, HISASHI
To: LUMILEDS HOLDING B.V.
Reel/Frame 050144/0973 →