Data storage based on data polarity
Methods, systems, and devices for storing and reading data at a memory device are described. A memory device may utilize one or more storage states to store data within a data word. The memory device may exhibit higher data leakage or more power consumption when storing or reading a first storage state compared to storing or reading one or more other storage states. In some cases, the memory device may generate a second data word corresponding to a first data word by modifying each symbol type of the first data word to generate a different symbol type for the second data word. A memory device may reduce the occurrence of a storage state associated with large data leakage, or high-power consumption, or both. Further, the memory device may generate and store an indicator indicating the transformation of a corresponding data word.
1. A method, comprising:
receiving, from a host device, a first data word to be stored in a memory device;
determining, by the memory device, that the first data word satisfies a first storage state criterion of the memory device, the first storage state criterion indicating a first characteristic of one or more memory cells of the memory device;
generating a second data word that satisfies a second storage state criterion by applying a transformation to the first data word based at least in part on determining that the first data word satisfies the first storage state criterion, the second storage state criterion indicating a second characteristic of the one or more memory cells of the memory device; and
storing the second data word in the memory device.
2. The method of claim 1 , further comprising:
generating an indicator that the second data word stored in the memory device is a transformed version of the first data word based at least in part on generating the second data word; and
storing the indicator in the memory device.
3. The method of claim 2 , wherein the indicator indicates how each symbol type of the first data word is modified as part of the transformation used to generate the second data word stored in the memory device.
4. The method of claim 2 , wherein the indicator is stored in a first portion of the memory device that is different than a second portion of the memory device that stores the second data word.
5. The method of claim 1 , further comprising:
modifying each symbol of the first data word to generate the second data word, the first data word and the second data word each including three or more symbol types, wherein each symbol type of the first data word is mapped to a different symbol type of the second data word.
6. The method of claim 1 , further comprising:
determining a quantity of symbols of the first data word that are a symbol type associated with the second characteristic of the one or more memory cells of the memory device; and
determining that the quantity of symbols of the first data word that are the symbol type associated with the second characteristic fails to satisfy a storage state threshold of the memory device.
7. The method of claim 1 , further comprising:
determining a quantity of symbols of the second data word that are a symbol type associated with the second characteristic of the memory device for storing in the one or more memory cells;
determining that the quantity of symbols of the second data word that are the symbol type associated with the second characteristic satisfies a storage state threshold of the memory device; and
determining that the second data word satisfies the second storage state criterion based at least in part on determining that the quantity of symbols of the second data word that are the symbol type associated with the second characteristic satisfies the storage state threshold of the memory device, wherein storing the second data word in the memory device is based at least in part on determining that the second data word satisfies the second storage state criterion.
8. The method of claim 1 , wherein the second characteristic indicates a symbol type that is configured to be stored in the memory device that exhibits less leakage compared to one or more symbol types configured to be stored in the memory device that are indicated by the first characteristic.
9. The method of claim 1 , further comprising:
receiving a third data word from the host device to be stored in the memory device;
determining, by the memory device, that the third data word satisfies the second storage state criterion of the memory device; and
storing the third data word in the memory device.
10. A method, comprising:
receiving, from a host device, a read command associated with a location of a memory device;
identifying, by the memory device, that a first data word stored at the location is associated with a second data word;
applying a transformation to symbols of the first data word stored in the memory device to generate the second data word based at least in part on identifying that the first data word stored in the memory device is associated with the second data word; and
sending the second data word to the host device.
11. The method of claim 10 , further comprising:
identifying an indicator stored in the memory device that indicates that the first data word is a transformed version of the second data word, wherein applying the transformation is based at least in part on the indicator.
12. The method of claim 10 , further comprising:
identifying an indicator stored in the memory device that indicates how each symbol type of the first data word is modified as part of the transformation used to generate the first data word, wherein applying the transformation is based at least in part on the transformation indicated in the indicator.
13. The method of claim 10 , further comprising:
modifying each symbol of the first data word to generate the second data word, the first data word and the second data word each including three or more symbol types, wherein each symbol type of the first data word is mapped to a different symbol type of the second data word.
14. A method, comprising:
identifying, by a host device, that a first data word to be stored in a memory device satisfies a first storage state criterion of the memory device, the first storage state criterion indicating a first characteristic of one or more memory cells of the memory device;
generating a second data word that satisfies a second storage state criterion by applying a transformation to the first data word based at least in part on determining that the first data word satisfies the first storage state criterion, a second characteristic indicating a symbol type that is configured to be stored in the one or more memory cells that exhibits less leakage compared to one or more symbol types configured to be stored in the one or more memory cells that are indicated by the first characteristic; and
sending the second data word to the memory device.
15. The method of claim 14 , further comprising:
receiving, from the memory device, a message indicating the first storage state criterion associated with the one or more memory cells.
16. The method of claim 15 , further comprising:
sending, to the memory device, a request for the first storage state criterion of the one or more memory cells, wherein receiving the message is based at least in part on sending the request.
17. The method of claim 14 , further comprising:
modifying each symbol of the first data word to generate the second data word, the first data word and the second data word each including three or more symbol types, wherein each symbol type of the first data word is mapped to a different symbol type of the second data word.
18. The method of claim 14 , further comprising:
sending, to the memory device, a read command for a stored data word, the read command comprising a transformation indicator commanding the memory device to transform the stored data word; and
receiving, from the memory device, a transformed data word.
19. The method of claim 14 , further comprising:
sending, to the memory device, a read command for the second data word;
receiving, from the memory device, the second data word; and
transforming the second data word to generate the first data word.
20. An apparatus comprising:
a first portion of a memory array configured to store a first data word; and
a second portion of the memory array configured to store an indicator associated with the first data word, wherein the indicator indicates that the first data word is a transformed version of a second data word, and wherein the first data word is transformed based at least in part on a storage state criterion indicating a characteristic of one or more memory cells of the memory array.
21. The apparatus of claim 20 , wherein the apparatus is configured to transform the second data word to generate the first data word.
22. The apparatus of claim 20 , further comprising:
a third portion of the memory array configured to store error correction code (ECC) information associated with the first data word stored in the first portion of the memory array.
23. The apparatus of claim 20 , wherein the indicator indicates how each symbol type of the second data word is modified as part of a transformation used to generate the first data word stored in the first portion of the memory array.
24. The apparatus of claim 20 , wherein the first portion of the memory array is configured to store a plurality of data words and the second portion of the memory array is configured to store a plurality of indicators associated with each of the plurality of data words.