Semiconductor memory

1. A semiconductor memory comprising:

a substrate;

a control circuit on the substrate;

a first memory cell array disposed above the control circuit, the first memory cell array including a plurality of first conductors stacked in a first direction crossing the substrate, and a first pillar extending through the first conductors and forming intersections with the first conductors, each of the intersections being configured to function as a memory cell; and

an external connection electrode disposed above the first memory cell array, and electrically connected to the control circuit,

wherein part of the first conductors is overlapped with the external connection electrode in the first direction.

2. The memory of claim 1 , wherein the first pillar is between the external connection electrode and the substrate.

3. The memory of claim 1 , wherein the external connection electrode and the first conductors are insulated from each other.

4. The memory of claim 1 , wherein the control circuit comprises a sense amplifier connected to the first pillar.

5. The memory of claim 1 , wherein the control circuit comprises a row decoder connected to the first pillar.

6. The memory of claim 1 , wherein the control circuit comprises an input/output circuit configured to control communication between the first memory cell array and an external memory controller.

7. The memory of claim 1 , wherein the external connection electrode is connected to the control circuit via a linear contact via.

8. The memory of claim 1 , wherein the external connection electrode is connected to the control circuit via a plurality of dot contact vias.

9. The memory of claim 1 , further comprising, at a position different from a connection between the external connection electrode and the control circuit, a portion to join together opposing metals disposed between the first memory cell array and the control circuit, respectively.

10. The memory of claim 9 , wherein the metals are copper.

11. The memory of claim 1 , wherein the first pillar is absent between the external connection electrode and the substrate.

12. The memory of claim 11 , wherein ends of the first conductors are provided in a staircase manner and located between the external connection electrode and the substrate.

13. The memory of claim 12 , wherein the ends are free from connections of conductors for connecting the first memory cell array with the control circuit.

14. The memory of claim 1 , further comprising

a second memory cell array disposed between the control circuit and the first memory cell array, the second memory cell array including a plurality of second conductors stacked in the first direction, and a second pillar extending through the second conductors and forming intersections with the second conductors, each of the intersections being configured to function as a memory cell.

15. The memory of claim 14 , wherein the external connection electrode comprises a portion penetrating through a side portion of the second memory cell array.

16. The memory of claim 15 , wherein the external connection electrode and the second conductors are insulated from each other.

17. The memory of claim 14 , wherein

the first pillar in the first memory cell array is more than one,

the second pillar in the second memory cell array is more than one and connected to the respective first pillar, and

the first pillar and the second pillar which are connected to each other are designated by same address information.

18. The memory of claim 14 , wherein

the second conductors are connected to the first conductors, respectively, and

one of the first conductors and respective one of the second conductors connected to each other are designated by same address information.