Imaging element, manufacturing method, and electronic apparatus
The present disclosure relates to an imaging element, a manufacturing method, and an electronic apparatus which enable an image having higher image quality to be captured. In a valid pixel region in which a plurality of pixels is arranged in a matrix, a plurality of microlenses for condensing light is formed in a corresponding relation with the pixels, and in a valid pixel peripheral region which is provided so as to surround an outside of the valid pixel region, a plurality of slit type light diffraction gratings is formed such that a longitudinal direction thereof extends in a direction orthogonal to a side direction of the valid pixel region. Then, an anti-reflection film is deposited on the microlenses and the slit type light diffraction gratings. The present technology, for example, can be applied to a CMOS image sensor.
1. An imaging element, comprising:
a valid pixel region in which a plurality of pixels is arranged in a matrix and a plurality of microlenses for condensing light is formed in a corresponding relation with the pixels; and
a valid pixel peripheral region which is provided so as to surround an outside of the valid pixel region, and in which a plurality of slit type light diffraction gratings is formed such that a longitudinal direction thereof extends in a direction orthogonal to a side direction of the valid pixel region,
wherein the plurality of slit type light diffraction gratings is provided at different intervals around the valid pixel peripheral region, and
wherein the plurality of slit type light diffraction gratings provided on an upper side and a lower side of the valid pixel peripheral region are formed at different intervals than the plurality of slit type light diffraction gratings provided on a left and a right side of the valid pixel peripheral region.
2. The imaging element according to claim 1 , wherein an anti-reflection film is deposited on the slit type light diffraction gratings and the microlenses.
3. The imaging element according to claim 1 , wherein the slit type light diffraction gratings in the valid pixel peripheral region are formed in a same process as a process for forming the microlenses in the valid pixel region.
4. The imaging element according to claim 1 , wherein the slit type light diffraction gratings in the valid pixel peripheral region and the microlenses in the valid pixel region are formed by using an etching method.
5. The imaging element according to claim 1 , wherein the slit type light diffraction gratings in the valid pixel peripheral region and the microlenses in the valid pixel region are formed by using a heat reflow method.
6. The imaging element according to claim 1 , wherein the slit type light diffraction gratings in the valid pixel peripheral region include a material different from a material of the microlenses in the valid pixel region.
7. A manufacturing method including the steps of:
forming a plurality of microlenses for condensing light, in a valid pixel region in which a plurality of pixels is arranged in a matrix, in a corresponding relation with the pixels; and
forming a plurality of slit type light diffraction gratings in a valid pixel peripheral region provided so as to surround an outside of the valid pixel region such that a longitudinal direction thereof extends in a direction orthogonal to a side direction of the valid pixel region,
wherein the plurality of slit type light diffraction gratings is provided at different intervals around the valid pixel peripheral region, and
wherein the plurality of slit type light diffraction gratings provided on an upper side and a lower side of the valid pixel peripheral region are formed at different intervals than the plurality of slit type light diffraction gratings provided on a left and a right side of the valid pixel peripheral region.
8. An electronic apparatus, comprising:
an imaging element including
a valid pixel region in which a plurality of pixels is arranged in a matrix and a plurality of microlenses for condensing light is formed in a corresponding relation with the pixels, and
a valid pixel peripheral region which is provided so as to surround an outside of the valid pixel region, and in which a plurality of slit type light diffraction gratings is formed such that a longitudinal direction thereof extends in a direction orthogonal to a side direction of the valid pixel region,
wherein the plurality of slit type light diffraction gratings is provided at different intervals around the valid pixel peripheral region, and
wherein the plurality of slit type light diffraction gratings provided on an upper side and a lower side of the valid pixel peripheral region are formed at different intervals than the plurality of slit type light diffraction gratings provided on a left and a right side of the valid pixel peripheral region.
9. The manufacturing method according to claim 7 , further comprising the step of depositing an anti-reflection film on the slit type light diffraction gratings and the microlenses.
10. The manufacturing method according to claim 7 , further comprising the step of forming the slit type light diffraction gratings in the valid pixel peripheral region in a same process as a process for forming the microlenses in the valid pixel region.
11. The manufacturing method according to claim 7 , further comprising the step of forming the slit type light diffraction gratings in the valid pixel peripheral region and the microlenses in the valid pixel region using an etching method.
12. The manufacturing method according to claim 7 , further comprising the step of forming the slit type light diffraction gratings in the valid pixel peripheral region and the microlenses in the valid pixel region using a heat reflow method.
13. The manufacturing method according to claim 7 , wherein the slit type light diffraction gratings in the valid pixel peripheral region include a material different from a material of the microlenses in the valid pixel region.
14. The electronic apparatus according to claim 8 , wherein an anti-reflection film is deposited on the slit type light diffraction gratings and the microlenses.
15. The electronic apparatus according to claim 8 , wherein the slit type light diffraction gratings in the valid pixel peripheral region are formed in a same process as a process for forming the microlenses in the valid pixel region.
16. The electronic apparatus according to claim 8 , wherein the slit type light diffraction gratings in the valid pixel peripheral region and the microlenses in the valid pixel region are formed by using an etching method.
17. The electronic apparatus according to claim 8 , wherein the slit type light diffraction gratings in the valid pixel peripheral region and the microlenses in the valid pixel region are formed by using a heat reflow method.
18. The electronic apparatus according to claim 8 , wherein the slit type light diffraction gratings in the valid pixel peripheral region include a material different from a material of the microlenses in the valid pixel region.