Carrier-foil-attached ultra-thin copper foil
The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, a Cu—Al bonding strength improvement layer, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A 3 ) having peeling properties, and a second metal (B 3 ) and third metal (C 3 ) facilitating the plating of the first metal (A 3 ).
1. A carrier foil-attached ultra-thin copper foil comprising:
a carrier foil;
a release layer;
a first ultra-thin copper foil;
a copper (Cu)-aluminum (Al) bonding strength improvement layer;
an Al layer; and
a second ultra-thin copper foil,
wherein the release layer includes a first metal (A 3 ) having a peeling property and second and third metals (B 3 , C 3 ) which facilitate plating of the first metal (A 3 );
wherein the carrier foil-attached ultra-thin copper foil is formed by sequentially stacking the carrier foil, the release layer, the first ultra-thin copper foil, the Cu—Al bonding strength improvement layer, the Al layer, and the second ultra-thin copper foil; and
wherein the copper (Cu)-aluminum (Al) bonding strength improvement layer is a layer which improves bonding strength between the Al layer and the first ultra-thin copper foil.
2. The carrier foil-attached ultra-thin copper foil of claim 1 , further comprising a Cu—Al bonding strength improvement layer between the Al layer and the second ultra-thin copper foil.
3. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein bonding strength (p 3 ) between the second ultra-thin copper foil and the Al layer and bonding strength (p 4 ) of the release layer satisfy an expression of about 1≤p 3 /p 4 ≤about 30.0.
4. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein in a wire bonding process of connecting a bonding pad of a semiconductor chip and a semiconductor substrate manufactured using the carrier foil-attached copper foil with a wire, a thickness (t 8 ) of the Al layer and a thickness (t 9 ) of a bonding pad of a semiconductor chip satisfy an expression of about 0.0005≤t 8 /t 9 ≤about 3.0.
5. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein in a wire bonding process of connecting a bonding pad of a semiconductor chip and a semiconductor substrate manufactured using the carrier foil-attached copper foil with a wire, a thickness (t 8 ) of the Al layer and a thickness (t 10 ) of a bonding wire of a semiconductor chip satisfy an expression of about 0.0005≤t 8 /t 10 ≤about 3.0.
6. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein a matte surface or a shiny surface of the carrier foil has a surface roughness of about 3.0 μm or less, and the Al layer is formed through electroplating or sputtering and has a surface roughness of about 3.0 μm or less.
7. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein the Al layer is formed through electroplating or sputtering, and a surface roughness (r 5 ) of a matte surface or a shiny surface of the carrier foil and a surface roughness (r 6 ) of the Al layer satisfy an expression of r 6 /r 5 ≤about 3.0.
8. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein the first metal is molybdenum (Mo) or tungsten (W), and the second and third metals are two different metals selected from the group consisting of iron (Fe), cobalt (Co), and nickel (Ni).
9. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein, in the release layer, a content (a 3 ) of the first metal ranges from about 30 wt % to about 89 wt %, a content (b 3 ) of the second metal ranges from about 10 wt % to about 60 wt %, and a content (c 3 ) of the third metal ranges from about 1 wt % to about 20 wt %.
10. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein the sum of deposition amounts of the release layer ranges from about 50 μg/dm 2 to about 10,000 μg/dm 2 .
11. The carrier foil-attached ultra-thin copper foil of claim 1 , wherein the first ultra-thin copper foil and the second ultra-thin copper foil are formed through electroplating or sputtering.
12. A carrier foil-attached ultra-thin copper foil comprising:
a carrier foil;
a diffusion prevention layer;
a release layer;
an oxidation prevention layer;
a first ultra-thin copper foil;
a copper (Cu)-aluminum (Al) bonding strength improvement layer;
an Al layer; and
a second ultra-thin copper foil,
wherein the release layer includes a first metal (A 3 ) having a peeling property and second and third metals (B 3 , C 3 ) which facilitate plating of the first metal (A 3 ), and
the diffusion prevention layer and the oxidation prevention layer include at least one element selected from the group consisting of nickel (Ni), cobalt (Co), iron (Fe), chromium (Cr), molybdenum (Mo), tungsten (W), aluminum (Al), and phosphorus (P);
wherein the carrier foil-attached ultra-thin copper foil is formed by sequentially stacking the carrier foil, the diffusion prevention layer, the release layer, the oxidation prevention layer, the first ultra-thin copper foil, the Cu—Al bonding strength improvement layer, the Al layer, and the second ultra-thin copper foil;
wherein the copper (Cu)-aluminum (Al) bonding strength improvement layer is a layer which improves bonding strength between the Al layer and and the first ultra-thin copper foil.