Diode laser with improved mode profile
A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.
1. A diode laser, comprising:
an n-type first cladding layer,
an n-type first waveguide layer disposed on said first cladding layer,
an active layer which is suitable for radiation generation and which is arranged on the first waveguide layer,
a p-type second waveguide layer disposed on said active layer,
a p-type second cladding layer disposed on said second waveguide layer,
wherein between the first waveguide layer and the active layer an n-type first intermediate layer is formed as a transition region, and
between the second waveguide layer and the active layer a p-type second intermediate layer is formed as a transition region,
wherein the boundaries between the individual layers are determined by the fact that at these locations the left-hand and right-hand differential quotient of the refractive index progression differs,
wherein the first intermediate layer and/or the second intermediate layer is a GRIN layer,
the sum of the layer thickness of the first waveguide layer and the layer thickness of the second waveguide layer being greater than 1 μm, the layer thickness of the second waveguide layer being less than 350 nm, and
wherein the difference between the maximum refractive index of said first waveguide layer and the refractive index of said first cladding layer is between 0.04 and 0.01,
wherein
the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.
2. The diode laser of claim 1 , wherein the layer thickness of the second waveguide layer is less than 150 nm.
3. The diode laser of claim 1 , wherein the layer thickness of the first intermediate layer and the layer thickness of the second intermediate layer is less than 350 nm.
4. The diode laser of claim 1 , wherein within the first intermediate layer the refractive index, starting from the active layer, decreases in the direction of the first waveguide layer by at least 0.03 or by 30% of the difference between the maximum refractive index of the first intermediate layer and the minimum refractive index of the first waveguide layer.
5. The diode laser of claim 1 , wherein the active layer has a layer thickness of less than 80 nm.
6. The diode laser of claim 1 , wherein the active layer comprises at least one quantum well.
7. The diode laser of claim 1 , wherein the first intermediate layer and the second intermediate layer consist of Al x Ga 1-x As.
8. The diode laser of claim 7 , wherein the molar Al content (x) of the first intermediate layer at the interface between the first intermediate layer and the active layer is greater than 0.
9. The diode laser of claim 7 , wherein the molar Al content (x) of the first intermediate layer at the interface between the first waveguide layer and the first intermediate layer is greater than 0.05.
10. The diode laser of claim 1 , wherein at least one of the waveguide layers has a refractive index gradient.
11. The diode laser of claim 1 , wherein the diode laser is designed as an edge-emitting diode laser or as an optical amplifier.