ENERGY CONVERTING DEVICE, AND DEVICE FOR ENERGIZING OIL EXPLORATION DEVICE
An energy converting device comprises an energy converting circuit which is provided on a substrate and configured to convert an input direct voltage into an output direct voltage higher than the input direct voltage, wherein the substrate comprises a first layer and a second layer. The energy converting circuit comprises a plurality of semiconductor devices and a planar transformer. Each of the semiconductor devices is in a flat shape and mounted on the substrate. The planar transformer comprises a primary circuit arranged on the first layer and a secondary circuit arranged on the second layer. The secondary circuit is insulated from the primary circuit by an insulation layer between the first and second layers.
1 . An energy converting device ( 400 , 600 ), comprising:
an energy converting circuit ( 610 ), provided on a substrate ( 620 ) and configured to convert an input direct voltage (V I ) into an output direct voltage (V o ) higher than the input direct voltage, wherein the substrate ( 620 ) comprises a first layer ( 621 ) and a second layer ( 622 ), and the energy converting circuit comprises:
a plurality of semiconductor devices ( 614 , 615 ), each in a flat shape and mounted on the substrate, and
a planar transformer ( 613 ), comprising:
a primary circuit ( 616 ) arranged on the first layer ( 621 ), and
a secondary circuit ( 617 ) arranged on the second layer ( 622 ) and insulated from the primary circuit by an insulation layer ( 623 ) between the first and second layers.
2 . The device according to claim 1 , wherein the primary circuit ( 616 ) and the secondary circuit ( 617 ) overlap in a direction perpendicular to the substrate.
3 . The device according to claim 1 , wherein the insulation layer ( 623 ) is made of a material comprising polypropylene, polytetrafluoroethylene and a combination thereof.
4 . The device according to claim 1 , wherein the input direct voltage is in a range from about 12 to about 400 volts, and the output direct voltage is in a range from about 10 to about 1000 kilovolts.
5 . The device according to claim 1 , wherein the semiconductor device ( 614 , 615 ) is made of a material comprising silicon carbide, each semiconductor device has a maximum operating temperature in a range from about 150 to about 250 degrees centigrade and a maximum operating pressure in a range from about 30 to about 40 kilopascals.
6 . The device according to claim 1 , wherein at least one of the semiconductor devices ( 614 ) is mounted onto a surface of the first layer, and the other semiconductor device(s) ( 615 ) is mounted onto a surface of the second layer.
7 . The device according to claim 1 , wherein all of the semiconductor devices ( 614 , 615 ) are mounted on a surface of the first layer or the second layer.
8 . A device ( 100 ) for energizing an oil exploration device ( 200 ), comprising:
a power source ( 300 ), configured to provide an input direct voltage; and
an energy converting circuit ( 410 , 610 ), coupled between the power source ( 300 ) and the oil exploration device ( 200 ) and configured to convert the input direct voltage (V I ) into an output direct voltage (V o ) which is higher than the input direct voltage and provided to the oil exploration device ( 200 ), wherein the energy converting circuit ( 610 ) is arranged on a substrate ( 620 ) comprising a first layer ( 621 ) and a second layer ( 622 ), and the energy converting circuit ( 610 ) comprises:
a plurality of semiconductor devices ( 614 , 615 ), each in a flat shape and mounted on the substrate, and
a planar transformer, comprising:
a primary circuit ( 616 ) arranged on the first layer ( 621 ), and
a secondary circuit ( 617 ) arranged on the second layer ( 622 ) and insulated from the primary circuit ( 616 ) by an insulation layer ( 623 ) between the first and second layers.
9 . The device according to claim 8 , wherein the oil exploration device ( 200 ) comprises a neutron generator ( 210 ), and the energy converting circuit ( 410 ) is coupled between the power source ( 300 ) and the neutron generator ( 210 ).
10 . An energy converting device ( 500 ) provided on a substrate, wherein the substrate comprises a first layer, a second layer, a third layer, and a fourth layer, the energy converting device comprising:
an inverter circuit ( 511 ), configured to invert an input direct voltage into a first alternating voltage, wherein the inverter circuit ( 511 ) comprises inverter components ( 514 ), each of which is in a flat shape and mounted onto a surface of the first layer ( 521 );
a transformer circuit ( 513 ), configured to transform the first alternating voltage into a second alternating voltage, wherein the second alternating voltage has an amplitude larger than the first alternating voltage, and the transformer circuit ( 513 ) comprises:
a primary circuit ( 516 ) arranged on the second layer ( 522 ), and
a secondary circuit ( 517 ) arranged on the third layer ( 523 ) and insulated from the primary circuit ( 516 ) by an insulation layer ( 525 ) between the second and third layers; and
a voltage-multiplier circuit ( 512 ), configured to convert the second alternating voltage into an output direct voltage having a value larger than a peak value of the second alternating voltage, wherein the voltage-multiplier circuit ( 512 ) comprises voltage-multiplier components ( 515 ), each of which is in a flat shape and mounted onto a surface of the fourth layer ( 524 ).