Fingerprint recognition device, manufacturing method thereof, and display panel

1. A fingerprint recognition device, comprising:

a first substrate; and

at least one photosensitive detector on the first substrate, each of the at least one photosensitive detector comprising a first electrode, a photosensitive layer on the first electrode, and a second electrode on the photosensitive layer,

wherein a side of the photosensitive layer facing away from the first electrode has a curved shape,

wherein each of the at least one photosensitive detector further comprises a respective loop-shaped frame on the photosensitive layer, and wherein the loop-shaped frame has a reflective inner surface such that light impinging on the inner surface is reflected to the photosensitive layer, and

wherein the loop-shaped frame surrounds at least a portion of the second electrode, and wherein the second electrode is in contact with the photosensitive layer via the at least the portion surrounded by the loop-shaped frame.

2. The fingerprint recognition device of claim 1 , wherein the photosensitive layer comprises:

an N-type semiconductor layer;

an intrinsic semiconductor layer on the N-type semiconductor layer; and

a P-type semiconductor layer on the intrinsic semiconductor layer,

wherein a side of the P-type semiconductor layer facing away from the first electrode has the curved shape.

3. The fingerprint recognition device of claim 2 , wherein the curved shape comprises at least one selected from a group consisting of a concave arced surface, a convex arced surface, and a wavy surface.

4. The fingerprint recognition device of claim 1 , wherein the loop-shaped frame is arranged such that an orthographic projection of the loop-shaped frame onto the first substrate overlaps an orthographic projection of a peripheral region of the photosensitive layer onto the first substrate.

5. The fingerprint recognition device of claim 1 , further comprising a second substrate opposite the first substrate and on the second electrode.

6. The fingerprint recognition device of claim 1 , further comprising at least one thin film transistor on the first substrate, wherein each of the at least one thin film transistor is electrically connected to the first electrode of a respective photosensitive detector of the at least one photosensitive detector to transfer an output signal from the respective photosensitive detector for fingerprint recognition.

7. A display panel comprising the fingerprint recognition device of claim 1 .

8. The display panel of claim 7 , wherein the photosensitive layer comprises:

an N-type semiconductor layer;

an intrinsic semiconductor layer on the N-type semiconductor layer; and

a P-type semiconductor layer on the intrinsic semiconductor layer,

wherein a side of the P-type semiconductor layer facing away from the first electrode has the curved shape.

9. The display panel of claim 8 , wherein the curved shape comprises at least one selected from a group consisting of a concave arced surface, a convex arced surface, and a wavy surface.

10. The display panel of claim 7 , wherein the loop-shaped frame is arranged such that an orthographic projection of the loop-shaped frame onto the first substrate overlaps an orthographic projection of a peripheral region of the photosensitive layer onto the first substrate.

11. The display panel of claim 7 , wherein the loop-shaped frame is made of a material comprising at least one selected from a group consisting of Mo, Al, Nb, and Ti.

12. A method of manufacturing a the fingerprint recognition device according to claim 1 , comprising:

forming the first electrode on the first substrate;

forming the photosensitive layer on the first electrode;

patterning the side of the photosensitive layer facing away from the first electrode into the curved shape; and

forming the second electrode on the patterned photosensitive layer.

13. The method of claim 12 , wherein the photosensitive layer comprises an N-type semiconductor layer, an intrinsic semiconductor layer on the N-type semiconductor layer, and a P-type semiconductor layer on the intrinsic semiconductor layer, and wherein the patterning comprises:

forming a photoresist layer on the P-type semiconductor layer;

patterning a side of the photoresist layer facing away from the P-type semiconductor layer into the curved shape; and

performing dry etching to remove the photoresist layer and to etch a side of the P-type semiconductor layer facing away from the first electrode into the curved shape.

14. The method of claim 13 , wherein the dry etching comprises a plurality of cycles of etching and ashing.

15. The method of claim 13 , wherein the dry etching is performed such that the P-type semiconductor layer has a minimum thickness greater than a threshold.

16. A fingerprint recognition device, comprising:

a first substrate; and

at least one photosensitive detector on the first substrate, each of the at least one photosensitive detector comprising a first electrode, a photosensitive layer on the first electrode, and a second electrode on the photosensitive layer,

wherein a side of the photosensitive layer facing away from the first electrode has a curved shape,

wherein each of the at least one photosensitive detector further comprises a respective loop-shaped frame on the photosensitive layer, and wherein the loop-shaped frame has a reflective inner surface such that light impinging on the inner surface is reflected to the photosensitive layer, and

wherein the loop-shaped frame is made of a material comprising at least one selected from a group consisting of Mo, Al, Nb, and Ti.