Non-volatile semiconductor memory device
According to one embodiment, a semiconductor memory device includes: a first interconnecting layer; a first signal line; a first memory cell that stores first information between the first interconnecting layer and the first signal line; second to fourth interconnecting layers provided above the first interconnecting layer; fifth to seventh interconnecting layers disposed apart from the second to fourth interconnecting layers; a second signal line coupled to the first signal line; a third signal line coupled to the first and second signal lines and the sixth interconnecting layer; and, first to fifth transistors.
1. A semiconductor memory device comprising:
a first interconnecting layer extending in a first direction;
a first signal line extending in a second direction intersecting the first direction and perpendicular to a substrate;
a first memory cell that stores first information between the first interconnecting layer and the first signal line;
a second interconnecting layer provided above the first interconnecting layer and extending in the first direction;
a third interconnecting layer provided above the second interconnecting layer and extending in the first direction;
a fourth interconnecting layer provided above the third interconnecting layer and extending in the first direction;
a fifth interconnecting layer disposed apart from the second interconnecting layer in a third direction intersecting the first and second directions and extending in the first direction;
a sixth interconnecting layer disposed apart from the third interconnecting layer in the third direction and extending in the first direction;
a seventh interconnecting layer disposed apart from the fourth interconnecting layer in the third direction and extending in the first direction;
a second signal line provided above the first signal line, coupled to the first signal line, disposed between the second interconnecting layer and the fifth interconnecting layer, between the third interconnecting layer and the sixth interconnecting layer, and between the fourth interconnecting layer and the seventh interconnecting layer, and extending in the second direction;
a third signal line provided above the first signal line, coupled to the first and second signal lines and the sixth interconnecting layer, and disposed between the second signal line and the fifth interconnecting layer, between the second signal line and the sixth interconnecting layer, and between the second signal line and the seventh interconnecting layer, and extending in the second direction,
a first transistor including the second interconnecting layer and the second signal line;
a second transistor including the third interconnecting layer and the second signal line,
a third transistor including the fourth interconnecting layer and the second signal line;
a fourth transistor including the fifth interconnecting layer and the third signal line, and a fifth transistor including the seventh interconnecting layer and the third signal line.
2. The device according to claim 1 , further comprising
an eighth interconnecting layer provided between the third interconnecting layer and the fourth interconnecting layer in the second direction and extending in the first direction.
3. The device according to claim 1 , further comprising:
a ninth interconnecting layer disposed apart from the first interconnecting layer in the third direction via the first signal line and extending in the first direction;
a fourth signal line provided between the first signal line and the ninth interconnecting layer, coupled to the second and third signal lines, and extending in the second direction;
a first insulating layer in contact with the first and fourth signal lines; and
a second memory cell that stores second information between the ninth interconnecting layer and the fourth signal line.
4. The device according to claim 1 , further comprising:
a first conductive layer provided on the second and third signal lines;
a bit line coupled to the first conductive layer; and
a sense amplifier coupled to the bit line.
5. The device according to claim 1 , wherein
the second and third signal lines are oxide semiconductors.
6. The device according to claim 1 , wherein
in the writing operation, a first voltage is applied to the first interconnecting layer, a second voltage lower than the first voltage is applied to the second to fourth interconnecting layers, and a third voltage lower than the second voltage is applied to the fifth and seventh interconnecting layers.
7. The device according to claim 1 , wherein
in the reading operation, a fourth voltage is applied to the first interconnecting layer, a fifth voltage higher than the fourth voltage is applied to the second and third interconnecting layers, and a sixth voltage lower than the fourth and fifth voltages is applied to the fourth, fifth and seventh interconnecting layers.
8. The device according to claim 3 , wherein
in the writing operation, a seventh voltage is applied to the first interconnecting layer, an eighth voltage lower than the seventh voltage is applied to the second to fourth and ninth interconnecting layers, and a ninth voltage lower than the eighth voltage is applied to the fifth and seventh interconnecting layers.
9. The device according to claim 1 , further comprising:
a charge storage layer provided between the first interconnecting layer and the first signal line;
a second insulating layer provided between the first interconnecting layer and the charge storage layer; and
a third insulating layer provided between the charge storage layer and the first signal line.
10. The device according to claim 2 , further comprising:
a tenth interconnecting layer provided between the first interconnecting layer and the second interconnecting layer in the second direction and extending in the first direction;
an eleventh interconnecting layer provided between the tenth interconnecting layer and the second interconnecting layer in the second direction and extending in the first direction;
a twelfth interconnecting layer provided between the eleventh interconnecting layer and the second interconnecting layer in the second direction and extending in the first direction;
a transistor including the tenth interconnecting layer and the first signal line;
a third memory cell that stores third information between the eleventh interconnecting layer and the first signal line; and
a selection transistor including the twelfth interconnecting layer and the first signal line,
wherein the first signal line is an oxide semiconductor.
11. The device according to claim 10 , wherein
in the writing operation, after the first information is stored in the first memory cell, the third information is stored in the third memory cell.
12. The device according to claim 10 , wherein
in the reading operation, after the third information is read from the third memory cell, the first information of the first memory cell is transferred to the third memory cell, and the first information is read from the third memory cell.
13. A semiconductor memory device comprising:
a first interconnecting layer extending in a first direction;
a first signal line having one end coupled to a first conductive layer, and extending in a second direction intersecting the first direction and perpendicular to a substrate;
a first memory cell that stores first information between the first interconnecting layer and the first signal line;
a second signal line provided above the first signal line, having one end coupled to a second conductive layer, and the other end coupled to the first signal line, and extending in the second direction;
a third signal line provided above the first signal line, having one end coupled to the second conductive layer, and the other end coupled to the first signal line and the second signal line, and extending in the second direction;
a first insulating layer provided between the second signal line and the third signal line;
a second interconnecting layer provided above the first interconnecting layer and extending in the first direction;
a third interconnecting layer provided above the second interconnecting layer and extending in the first direction;
a fourth interconnecting layer provided above the third interconnecting layer and extending in the first direction;
a fifth interconnecting layer disposed apart from the second interconnecting layer in a third direction intersecting the first direction and the second direction, and extending in the first direction;
a sixth interconnecting layer disposed apart from the third interconnecting layer in the third direction, coupled to the third signal line, and extending in the first direction;
a seventh interconnecting layer disposed apart from the fourth interconnecting layer in the third direction and extending in the first direction;
a second insulating layer provided between the second signal line and the second interconnecting layer, between the second signal line and the third interconnecting layer, and between the second signal line and the fourth interconnecting layer;
a third insulating layer provided between the third signal line and the fifth interconnecting layer; and
a fourth insulating layer provided between the third signal line and the seventh interconnecting layer.
14. The device according to claim 13 , further comprising
an eighth interconnecting layer provided between the third interconnecting layer and the fourth interconnecting layer in the second direction and extending in the first direction, wherein
the second insulating layer is provided between the eighth interconnecting layer and the second signal line.
15. The device according to claim 13 , further comprising:
a ninth interconnecting layer disposed apart from the first interconnecting layer in the third direction and extending in the first direction;
a fourth signal line provided between the first signal line and the ninth interconnecting layer, and having one end coupled to the second and third signal lines, and the other end coupled to the first conductive layer, and extending in the second direction,
a fifth insulating layer provided between the first signal line and the fourth signal line; and
a second memory cell that stores second information between the ninth interconnecting layer and the fourth signal line.
16. The device according to claim 13 , further comprising
a selection transistor provided between the first interconnecting layer and the second interconnecting layer.
17. The device according to claim 13 , wherein
the second and third signal lines are oxide semiconductors.
18. The device according to claim 13 , wherein
in the writing operation, a first voltage is applied to the first interconnecting layer, a second voltage lower than the first voltage is applied to the second to fourth interconnecting layers, and a third voltage lower than the second voltage is applied to the fifth and seventh interconnecting layers.
19. The device according to claim 13 , wherein
in the reading operation, a fourth voltage is applied to the first interconnecting layer, a fifth voltage higher than the fourth voltage is applied to the second and third interconnecting layers, a sixth voltage lower than the fourth and fifth voltages is applied to the fourth, fifth and seventh interconnecting layers, a seventh voltage is applied to the second conductive layer, and an eighth voltage lower than the seventh voltage is applied to the first conductive layer.
20. The device according to claim 15 , wherein
in the writing operation, a first voltage is applied to the first interconnecting layer, a second voltage lower than the first voltage is applied to the second to fourth and ninth interconnecting layers, and a third voltage lower than the second voltage is applied to the fifth and seventh interconnecting layers.