Light emitting device with nanostructured phosphor
Embodiments of the invention include a light emitting device, a first wavelength converting material, and a second wavelength converting material. The first wavelength converting material includes a nanostructured wavelength converting material. The nanostructured wavelength converting material includes particles having at least one dimension that is no more than 100 nm in length. The first wavelength converting material is spaced apart from the light emitting device.
1. A structure comprising:
a semiconductor light emitting device; and
a wavelength converting region comprising:
a nanostructured wavelength converting material configured to absorb pump light and emit converted light, the nanostructured wavelength converting material comprising particles having at least one dimension that is no more than 100 nm in length; and
a transparent matrix in which the nanostructured wavelength converting material is disposed,
a spacing between the wavelength converting region and the semiconductor light emitting device is greater than 0 nm and no more than 10 mm; and
a phosphor, the phosphor disposed between the nanostructured wavelength converting material and the semiconductor light emitting device, the phosphor not in direct contact with the nanostructured wavelength converting material and not in direct contact with the semiconductor light emitting device.
2. The structure of claim 1 wherein the phosphor is garnet-based.
3. The structure of claim 1 wherein the nanostructured wavelength converting material is disposed in the transparent matrix material in a first layer, the phosphor is disposed in a second layer, and the first layer is not in direct contact with the second layer.
4. The structure of claim 1 wherein the transparent matrix is one of organic polymer and silicone.
5. The structure of claim 1 wherein the semiconductor light emitting device is disposed in a reflective container.
6. The structure of claim 1 wherein the nanostructured wavelength converting material is configured to emit red light.
7. The structure of claim 1 further comprising a dielectric material disposed between the wavelength converting region and the semiconductor light emitting device.
8. The structure of claim 1 further comprising at least one wire in direct contact with the wavelength converting region.
9. The structure of claim 8 wherein the at least one wire is thermally connected to a heat sink.
10. The structure of claim 1 further comprising a coating disposed on the wavelength converting region to reduce one of oxygen penetration and moisture penetration.
11. The structure of claim 10 wherein the coating is selected from the group consisting of alumina, silica, silicon nitride, and silicone oxynitride.
12. The structure of claim 10 wherein the coating is a parylene-based compound.
13. The structure of claim 1 wherein the nanostructured wavelength converting material further comprises a reflector configured to be more reflective of pump light and less reflective of converted light.