Solar cells
A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.
1. A tandem photovoltaic cell, comprising:
(A) at least one core semiconductor nanowire on a graphene layer, said at least one core semiconductor nanowire having been grown epitaxially on said graphene layer wherein said at least one core semiconductor nanowire comprises at least one group III-V compound;
a semiconductor shell surrounding said at least one core semiconductor nanowire, said semiconductor shell comprising at least one group III-V compound such that said at least one core semiconductor nanowire and said semiconductor shell form an n-type semiconductor and a p-type semiconductor respectively or vice versa; and
an outer conducting coating surrounding said semiconductor shell which forms an electrode contact; or
an outer conducting layer which contacts the top of the semiconductor shell on said at least one core semiconductor nanowire and which forms an electrode; and
(B) a thin-film p-n junction cell having a bottom electrode and a top electrode;
where said graphene layer serves as the top electrode for the thin-film p-n junction cell.
2. The tandem photovoltaic cell of claim 1 , further comprising a second photovoltaic cell stacked thereon.
3. The tandem photovoltaic cell as claimed in claim 1 , wherein said at least one core semiconductor nanowire comprises AlAs, GaSb, GaP, GaN, GaAs, InP, InN, InAs, InGaAs, or AlGaAs.
4. The tandem photovoltaic cell as claimed in claim 1 , wherein the graphene layer comprises 10 or fewer graphene sheets.
5. The tandem photovoltaic cell as claimed in claim 1 , wherein the graphene layer is a CVD-grown graphene layer on a metallic film or foil.
6. The tandem photovoltaic cell as claimed in claim 1 , wherein the graphene layer is doped with a dopant and the at least one core semiconductor nanowire is doped with the same dopant.
7. The tandem photovoltaic cell as claimed in claim 1 , wherein the graphene layer is doped by adsorption of organic or inorganic molecules.
8. The tandem photovoltaic cell as claimed in claim 1 , wherein a surface of the graphene layer is doped by a substitutional doping method during its growth with incorporation of dopants.
9. The tandem photovoltaic cell as claimed in claim 1 , wherein a plurality of the at least one core semiconductor nanowires are disposed on the graphene layer and wherein said plurality of the at least one core semiconductor nanowires are substantially parallel.
10. The tandem photovoltaic cell as claimed in claim 1 , wherein said at least one core semiconductor nanowire is grown in the presence of a catalyst.
11. The tandem photovoltaic cell as claimed in claim 1 , wherein said at least one core semiconductor nanowire is a p-type semiconductor and said semiconductor shell is an n-type semiconductor.
12. The tandem photovoltaic cell as claimed in claim 1 , wherein an undoped layer is present between said at least one core semiconductor nanowire and said semiconductor shell.
13. The tandem photovoltaic cell as claimed in claim 1 , further comprising a plurality of additional photovoltaic cells stacked vertically thereon.
14. The tandem photovoltaic cell as claimed in claim 13 , wherein the plurality of additional photovoltaic cells each have a different band gap.