METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
Provided is a method of manufacturing a semiconductor substrate. The method includes: forming a crushing layer on the back surface of the semiconductor substrate before forming an element on an epitaxial layer formed on a front surface of the semiconductor substrate; and removing a part of the epitaxial layer. The semiconductor substrate is not exposed to a temperature of 200° C. or higher between the forming of the crushing layer and the removing.
1 . A method of manufacturing a semiconductor substrate, comprising:
forming a crushing layer on the back surface of the semiconductor substrate before forming an element on an epitaxial layer formed on a front surface of the semiconductor substrate; and
removing a part of the epitaxial layer,
wherein the semiconductor substrate is not exposed to a temperature of 200° C. or higher between the forming of the crushing layer and the removing.
2 . A method of manufacturing a semiconductor substrate according to claim 1 ,
wherein the removing includes forming a mesa structure constituting the element by etching the epitaxial layer.
3 . A method of manufacturing a semiconductor substrate according to claim 2 ,
wherein the mesa structure constitutes a vertical cavity surface emitting laser element.
4 . A method of manufacturing a semiconductor substrate according to claim 1 ,
wherein the element is a light emitting element, and
the method further comprises forming a protective film that protects a light emission port of the light emitting element after the removing.
5 . A method of manufacturing a semiconductor substrate according to claim 4 ,
wherein the removing includes forming a mesa structure constituting the element by etching the epitaxial layer, and
the forming of the protective film is performed after the forming of the mesa structure.
6 . A method of manufacturing a semiconductor substrate according to claim 5 , further comprising forming an insulating film covering a part of the mesa structure, in which the protective film is formed at the same time.
7 . A method of manufacturing a semiconductor substrate according to claim 1 ,
wherein the semiconductor substrate is not exposed to a temperature of 300° C. or higher between the forming of the crushing layer and the removing.
8 . A method of manufacturing a semiconductor substrate comprising:
forming a crushing layer on the back surface of the semiconductor substrate before forming an element on an epitaxial layer formed on a front surface of the semiconductor substrate; and
removing a part of the epitaxial layer, wherein
the method is not provided with forming a film on the semiconductor substrate by chemical vapor deposition between the forming of the crushing layer and the removing.
9 . A method of manufacturing a semiconductor substrate according to claim 8 ,
wherein the removing includes forming a mesa structure constituting the element by etching the epitaxial layer.
10 . A method of manufacturing a semiconductor substrate according to claim 9 ,
wherein the mesa structure constitutes a vertical cavity surface emitting laser element.
11 . A method of manufacturing a semiconductor substrate according to claim 8 ,
wherein the element is a light emitting element, and
the method further comprises forming a protective film that protects a light emission port of the light emitting element after the removing.
12 . A method of manufacturing a semiconductor substrate according to claim 11 ,
wherein the removing includes forming a mesa structure constituting the element by etching the epitaxial layer, and
the forming of the protective film is performed after the forming of the mesa structure.
13 . A method of manufacturing a semiconductor substrate according to claim 12 , further comprising forming an insulating film covering a part of the mesa structure, in which the protective film is formed at the same time.
14 . A method of manufacturing a semiconductor substrate according to claim 8 ,
wherein the semiconductor substrate is not exposed to a temperature of 200° C. or higher between the forming of the crushing layer and the removing.
15 . A method of manufacturing a semiconductor substrate according to claim 8 ,
wherein the semiconductor substrate is not exposed to a temperature of 300° C. or higher between the forming of the crushing layer and the removing.
16 . A method of manufacturing a semiconductor substrate according to claim 2 ,
wherein the element is a light emitting element, and
the method further comprises forming a protective film that protects a light emission port of the light emitting element after the removing.
17 . A method of manufacturing a semiconductor substrate according to claim 3 ,
wherein the element is a light emitting element, and
the method further comprises forming a protective film that protects a light emission port of the light emitting element after the removing.
18 . A method of manufacturing a semiconductor substrate according to claim 2 ,
wherein the semiconductor substrate is not exposed to a temperature of 300° C. or higher between the forming of the crushing layer and the removing.
19 . A method of manufacturing a semiconductor substrate according to claim 3 ,
wherein the semiconductor substrate is not exposed to a temperature of 300° C. or higher between the forming of the crushing layer and the removing.
20 . A method of manufacturing a semiconductor substrate according to claim 4 ,
wherein the semiconductor substrate is not exposed to a temperature of 300° C. or higher between the forming of the crushing layer and the removing.