Magnetic field sensor with magnetoresistance elements arranged in a bridge and having a common reference direction and opposite bias directions
A magnetic field sensor can include four magnetoresistance elements arranged in a bridge, wherein two of the magnetoresistance elements have a response to an external or stray magnetic field that is opposite to a response of the other two magnetoresistance elements.
1. A magnetic field sensor comprising:
first, second, third, and fourth magnetoresistance elements coupled to form a bridge circuit, wherein the first and second magnetoresistance elements are coupled in a first series arrangement at a first junction node and the third and fourth magnetoresistance elements are coupled in a second series arrangement at a second junction node, wherein a differential signal is generated between the first and second junction nodes, wherein the first, second, third, and fourth magnetoresistance elements comprise respective first, second, third and fourth reference layer structures having a respective first, second, third, and fourth reference directions, each in the same direction, wherein the first and fourth magnetoresistance elements experience respective first and fourth bias magnetic fields, each having a first direction orthogonal to the reference direction, wherein the second and third magnetoresistance elements experience respective second and third bias magnetic fields each having a second direction opposite to the first direction, resulting in the first and fourth magnetoresistance elements having a first direction of maximum sensitivity and the second and third magnetoresistance elements having a second direction of maximum sensitivity opposite to the first direction of maximum sensitivity, wherein each one of the first, second, third, and fourth magnetoresistance elements is arranged to experience substantially the same magnitude and direction of an external magnetic field, and wherein the bridge circuit is positioned so that, in the presence of the external magnetic field, respective sensitivities of the first, second, third, and fourth magnetoresistance elements change in response to the external magnetic field.
2. The magnetic field sensor of claim 1 , further comprising
an electronic circuit, comprising:
a carrier signal generator operable to generate an AC carrier magnetic field in a direction substantially the same as the first, second, third, and fourth reference directions, wherein the first, second, third, and fourth magnetoresistance elements experience the AC carrier magnetic field to generate an AC signal, wherein an amplitude of the AC signal changes in response to the external magnetic field.
3. The magnetic field sensor of claim 2 , wherein the electronic circuit further comprises:
an amplitude detector circuit to receive the AC signal and operable to detect an amplitude change of the AC signal.
4. The magnetic field sensor of claim 3 , further comprising:
a substrate, wherein the first, second, third and fourth magnetoresistance elements and the electronic circuit are disposed upon a major surface of the substrate.
5. The magnetic field sensor of claim 4 , wherein the first, second, third and fourth magnetoresistance elements are double pinned magnetoresistance elements, wherein the first, second, third and fourth magnetoresistance elements have respective first, second, third, and fourth bias layer structures operable to generate the first, second, third, and fourth bias magnetic fields, respectively.
6. The magnetic field sensor of claim 5 , wherein the first and fourth magnetoresistance elements comprise first and fourth spacer layers, respectively, each selected to result in an antiferromagnetic coupling, and wherein the second and third magnetoresistance elements comprise a second and third spacer layers, respectively, each selected to result in a ferromagnetic coupling.
7. The magnetic field sensor of claim 6 , wherein the magnetic field sensor further comprises a first insulating layer disposed between the first and second magnetoresistance elements in a first dual element stack arrangement, and wherein the magnetic field sensor further comprises a second insulating layer disposed between the third and fourth magnetoresistance elements in a second dual element stack arrangement.
8. The magnetic field sensor of claim 7 , wherein the first, second, third, and fourth magnetoresistance elements are GMR elements.
9. The magnetic field sensor of claim 7 , wherein the first, second, third, and fourth magnetoresistance elements are TMR elements.
10. The magnetic field sensor of claim 4 , wherein the first, second, third and fourth magnetoresistance elements are single pinned magnetoresistance elements, wherein bias directions of the first, second, third, and fourth magnetoresistance elements are determined by first, second, third, and fourth bias magnetic fields that originate outside of the first, second, third and fourth magnetoresistance elements.
11. The magnetic field sensor of claim 10 , further comprising:
a magnet disposed proximate to the substrate, wherein the first, second, third, and fourth bias magnetic fields are generated by the magnet.
12. The magnetic field sensor of claim 11 , wherein the first, second, third, and fourth magnetoresistance elements are GMR elements.
13. The magnetic field sensor of claim 11 , wherein the first, second, third, and fourth magnetoresistance elements are TMR elements.
14. The magnetic field sensor of claim 10 , further comprising:
a current conductor, wherein the first, second, third, and fourth bias magnetic fields are generated by a current flowing through the current conductor.
15. The magnetic field sensor of claim 14 , wherein the current conductor is disposed upon the substrate, wherein the current conductor is formed as a loop having first and second sides.
16. The magnetic field sensor of claim 14 , wherein the first and second magnetoresistance elements are disposed proximate to the first side and the third and fourth magnetoresistance elements are disposed proximate to the second side.
17. The magnetic field sensor of claim 16 , wherein the first, second, third, and fourth magnetoresistance elements are GMR elements.
18. The magnetic field sensor of claim 16 , wherein the first, second, third, and fourth magnetoresistance elements are TMR elements.
19. The magnetic field sensor of claim 1 , wherein the magnetic field sensor further comprises a first insulating layer disposed between the first and second magnetoresistance elements in a first dual element stack arrangement, and wherein the magnetic field sensor further comprises a second insulating layer disposed between the third and fourth magnetoresistance elements in a second dual element stack arrangement.