Gas supply member, plasma processing apparatus, and method for forming coating film
A gas supply member according to an embodiment includes: a base material that has a gas flow path capable of flowing a gas from an upstream side to a downstream side, a main surface arranged on the downstream side of the gas flow path in a direction intersecting an extending direction of the gas flow path, and a discharge port connecting the gas flow path and the main surface; and a film that contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covers the main surface and a surface of the discharge port of the base material. The film covers the main surface and the surface of the discharge port such that a surface of the film does not have a surface orientation portion of which a normal intersects a normal of the main surface at 45° to 75°.
1. A gas supply member comprising:
a base material that has:
a gas flow path capable of flowing a gas from an upstream side to a downstream side,
a main surface arranged on the downstream side of the gas flow path in a direction intersecting an extending direction of the gas flow path, and
a discharge port connecting the gas flow path and the main surface; and
a film that contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covers the main surface and a surface of the discharge port of the base material,
wherein the film covers the main surface and the surface of the discharge port such that a surface of the film does not have a surface orientation portion of which a normal intersects a normal of the main surface at 45° to 75°.
2. The gas supply member according to claim 1 , wherein
the discharge port has a curved or planar surface between the main surface and the gas flow path, and
the film covering the surface of the discharge port has:
a first face extending in a direction along the main surface;
a second face extending in a direction along the extending direction of the gas flow path; and
an apex angle formed by an intersection of the first surface and the second surface.
3. The gas supply member according to claim 2 , wherein
the surface of the discharge port has a surface orientation portion having a normal intersecting the normal of the main surface at 45° to 75°, and
a film thickness of the film is maximized on the surface orientation portion of the surface of the discharge port.
4. The gas supply member according to claim 3 , wherein
the apex angle of the film is arranged on the surface orientation portion of the surface of the discharge port.
5. The gas supply member according to claim 1 , wherein
the film is an yttria film.
6. A gas supply member comprising:
a base material that has:
a gas flow path capable of flowing a gas from an upstream side to a downstream side,
a main surface arranged on the downstream side of the gas flow path in a direction intersecting an extending direction of the gas flow path, and
a discharge port connecting the gas flow path and the main surface; and
a film that contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covers the main surface and a surface of the discharge port of the base material,
wherein the surface of the discharge port has a surface orientation portion having a normal intersecting a normal of the main surface at 45° to 75°,
a film thickness of the film is maximized on the surface orientation portion of the surface of the discharge port, and
wherein the discharge port has a curved or planar surface between the main surface and the gas flow path, and
the film covering the surface of the discharge port has:
a first surface extending in a direction along the main surface;
a second surface extending in a direction along the extending direction of the gas flow path; and
an apex angle formed by an intersection of the first surface and the second surface.
7. The gas supply member according to claim 6 , wherein the apex angle or the film is arranged on the surface orientation portion of the surface of the discharge port.
8. The gas supply member according to claim 6 , wherein
the film is an yttria film.
9. A plasma processing apparatus comprising:
a processing container in which a substrate is processed;
a power supply which supplies power into the processing container to generate plasma;
a substrate mounting table on which the substrate is mounted; and
the gas supply member according to claim 1 which is arranged to oppose the substrate mounting table.
10. The plasma processing apparatus according to claim 9 , wherein
the surface of the discharge port has a surface orientation portion having a normal intersecting the normal of the main surface at 45° to 75°, and
a film thickness of the film is maximized on the surface orientation portion of the surface of the discharge port.
11. The plasma processing apparatus according to claim 9 , wherein
the discharge port has a curved or planar surface between the main surface and the gas flow path, and
the film covering the surface of the discharge port has:
a first surface extending in a direction along the main surface;
a second surface extending in a direction along the extending direction of the gas flow path; and
an apex angle formed by an intersection of the first surface and the second surface.
12. The plasma processing apparatus according to claim 9 , wherein
the film is an yttria film.
13. A plasma processing apparatus comprising:
a processing container in which a substrate is processed;
a power supply which supplies power into the processing container to generate plasma;
a substrate mounting table on which the substrate is mounted; and
the gas supply member according to claim 6 which is arranged to oppose the substrate mounting table.
14. The plasma processing apparatus according to claim 13 , wherein
the film is an yttria film.
15. A method for forming a coating film on a base material,
the base material having a gas flow path capable of flowing a gas, a main surface arranged in a direction intersecting an extending direction of the gas flow path, and a discharge port connecting the gas flow path and the main surface,
the coating film containing at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covering the main surface and a surface of the discharge port of the base material, the method comprising:
forming a first film which contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and has a film thickness on the surface of the discharge port thicker than a film thickness on the main surface;
forming a second film on the first film, the second film containing at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and having a film thickness on the main surface thicker than a film thickness on the surface of the discharge port;
polishing the first film and the second film from a side of the main surface to form the coating film such that a surface of the coating film extends in a direction along the main surface on the side of the main surface; and
the coating film covers the main surface and the surface of the discharge port such that the surface of the coating film does not have a surface orientation portion of which a normal intersects a normal of the main surface at 45° to 75°.
16. The method for forming a coating film according to claim 15 , wherein
the surface of the discharge port has a surface orientation portion having a normal intersecting a normal of the main surface at 45° to 75°, and
a film thickness of the coating film is maximized on the surface orientation portion of the surface of the discharge port.
17. The method for forming a coating film according claim 15 , wherein
the coating film is an yttria film.