Power stage with vertical integration for high-density, low-noise voltage regulators
Embodiments of a power stage with vertical integration for high-density, low-noise voltage regulators are described. In some embodiments, an Information Handling System (IHS) may include: a processor; and a multi-phase voltage regulator (VR) coupled to the processor, where the multi-phase VR comprises at least one power stage, and where the at least one power stage includes: a High-Side Field-Effect Transistor (HSFET) die mounted on a leadframe; a Low-Side FET (LSFET) die mounted on the leadframe; at least one decoupling capacitor mounted on the leadframe; and a driver circuit mounted on a clip, where the clip overlays at least a portion of the HSFET die and the LSFET die.
1. An Information Handling System (IHS), comprising:
a processor;
a multi-phase voltage regulator (VR) coupled to the processor, wherein the multi-phase VR comprises at least one power stage, and wherein the at least one power stage comprises, integrated in a Power Quad Flat No Leads (PQFN) package:
a High-Side Field-Effect Transistor (HSFET) die mounted on a leadframe;
a Low-Side FET (LSFET) die mounted on the leadframe;
at least one decoupling capacitor mounted on the leadframe;
a driver circuit mounted on a clip, wherein the clip overlays at least a portion of the HSFET die and the LSFET die; and
a VR controller coupled to the at least one power stage, wherein the VR controller is coupled to a first pin of the PQFN package, and wherein the first pin is configured to:
receive a current reference from the VR controller;
provide the VR controller with an identification of a supplier of the power stage with a selected voltage level;
provide the VR controller with access to an HSFET gate terminal; and
enable communications during operation of the power stage.
2. The IHS of claim 1 , wherein the at least one decoupling capacitor comprises a Multilayer Ceramic Capacitor (MLCC).
3. The IHS of claim 1 , wherein the clip comprises a trace configured to couple a source terminal of the HSFET die to a drain terminal of the LSFET die to form a phase node.
4. The IHS of claim 1 , wherein the clip covers the LSFET die and the HSFET die to the exclusion of the decoupling capacitor.
5. The IHS of claim 1 , wherein the VR controller is coupled to a second pin of the PQFN package, and wherein the second pin is configured to:
enable temperature sensing by the VR controller; and
provide a fault warning to the VR controller.
6. The IHS of claim 1 , wherein the multi-phase VR further comprises a plurality of power stages disposed next to each other, wherein the power stages share a common power via and decoupling capacitors.
7. A multi-phase voltage regulator (VR), comprising:
a VR controller; and
at least one power stage coupled to the VR controller, wherein the at least one power stage comprises:
a High-Side Field-Effect Transistor (HSFET) die mounted on a leadframe;
a Low-Side FET (LSFET) die mounted on the leadframe;
a decoupling capacitor mounted on the leadframe; and
a driver circuit mounted on a clip, wherein the clip overlays at least a portion of the HSFET die and the LSFET die to the exclusion of the decoupling capacitor, wherein the HSFET die, the LSFET die, the decoupling capacitor, and the driver circuit are integrated in a package, wherein the VR controller is coupled to a first pin of the package, and wherein the first pin is configured to:
provide the VR controller with an identification of the power stage;
provide the VR controller with access to an HSFET gate terminal; and
enable communications during operation of the power stage.
8. The multi-phase VR of claim 7 , wherein the VR controller is coupled to a third pin of the PQFN package, and wherein the third pin is configured to:
enable temperature sensing by the VR controller; and
provide a fault warning to the VR controller.
9. The multi-phase VR of claim 7 , wherein the VR controller is coupled to a second pin of the PQFN package, and wherein the second pin is configured to:
receive a current reference from the VR controller; and
enable communications before operation of the power stage.
10. The multi-phase VR of claim 7 , wherein the decoupling capacitor comprises a Multilayer Ceramic Capacitor (MLCC).
11. The multi-phase VR of claim 7 , wherein the clip comprises a trace configured to couple a source terminal of the HSFET die to a drain terminal of the LSFET die to form a phase node.
12. A power stage of a voltage regulator (VR), the power stage comprising:
a High-Side Field-Effect Transistor (HSFET) die mounted on a leadframe;
a Low-Side FET (LSFET) die mounted on the leadframe;
a decoupling capacitor mounted on the leadframe; and
a driver circuit mounted on a clip, wherein the clip overlays at least a portion of the HSFET die and the LSFET die to the exclusion of the decoupling capacitor, wherein the HSFET die, the LSFET die, the decoupling capacitor, and the driver circuit are integrated in a package, and wherein the package comprises:
a first pin configured to: provide an identification of the power stage, provide access to an HSFET gate terminal, and enable communications during operation of the power stage, and
a second pin configured to receive a current reference.
13. The power stage of claim 12 , wherein the package comprises a third pin configured to:
enable temperature sensing; and
provide a fault warning to the VR controller.