Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly
An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.
1. A method to process a melt comprising:
providing the melt in a crucible, the melt having an exposed surface;
providing heat through the melt to the exposed surface by heating a first side of the crucible opposite the exposed surface with a heater; and
providing within the crucible a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt, wherein the heat diffusion barrier assembly is disposed below the exposed surface, and wherein the heater is disposed to generate in the isolation region a first heat flow density at the exposed surface, and is arranged to generate in the outer region a second heat flow density at the exposed surface, less than the first heat flow density, wherein the heat diffusion barrier assembly comprises a first heat diffusion barrier and second heat diffusion barrier that are angled, wherein the isolation region is wider toward a bottom of the crucible, wherein top portions of the first and second heat diffusion barriers are free and unattached to other structures such that the melt is disposed between the first heat diffusion barrier and the second heat diffusion barrier at a top portion of the diffusion barrier assembly.
2. The method of claim 1 , wherein the melt is a silicon melt, and wherein at a top portion of the isolation region a heat flow is 30 W/cm 2 to 40 W/cm 2 .
3. The method of claim 1 , wherein at least one of the first heat diffusion barrier and the second heat diffusion barrier is composed of fused silica.
4. The method of claim 1 , wherein the melt is composed of silicon, and wherein a first portion of the heat that flows through the isolation region to the exposed surface has a first heat flow density that is greater than a second heat flow density for a second portion of the heat that flows from the isolation region through the first and second heat diffusion barriers to the outer region.
5. The method of claim 1 , further comprising providing a crucible holder disposed between the heater and crucible and having at least one insulator spacer arranged to generate at least two heating zones that provide heat to the melt.
6. The method of claim 5 , wherein the crucible holder is a heat intensifier.
7. The method of claim 1 , further comprising generating heat flow into the isolation region across a heater width greater than the isolation region width, wherein the heat flow at the surface region is uniform across the isolation region between the first heat diffusion barrier and second heat diffusion barrier.
8. A method to process a melt comprising:
providing the melt in a crucible, the melt having an exposed surface; and
providing within the crucible a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt, wherein the heat diffusion barrier assembly is disposed below the exposed surface, and wherein a heater is disposed to generate in the isolation region a first heat flow density at the exposed surface, and is arranged to generate in the outer region a second heat flow density at the exposed surface, less than the first heat flow density, wherein the heat diffusion barrier assembly comprises a first heat diffusion barrier and second heat diffusion barrier that are angled, wherein the isolation region is wider toward a bottom of the crucible, wherein top portions of the first and second heat diffusion barriers are free and unattached to other structures.
9. The method of claim 8 , wherein the melt is a silicon melt, and wherein at a top portion of the isolation region a heat flow is 30 W/cm 2 to 40 W/cm 2 .
10. The method of claim 8 , wherein at least one of the first heat diffusion barrier and the second heat diffusion barrier is composed of fused silica.
11. The method of claim 8 , wherein the melt is composed of silicon, and wherein a first portion of the heat that flows through the isolation region to the exposed surface has a first heat flow density that is greater than a second heat flow density for a second portion of the heat that flows from the isolation region through the first and second heat diffusion barriers to the outer region.
12. The method of claim 8 , further comprising providing a crucible holder disposed between the heater and crucible and having at least one insulator spacer arranged to generate at least two heating zones that provide heat to the melt.
13. The method of claim 12 , wherein the crucible holder is a heat intensifier.
14. The method of claim 8 , further comprising generating heat flow into the isolation region across a heater width greater than the isolation region width, wherein the heat flow at the surface region is uniform across the isolation region between the first heat diffusion barrier and second heat diffusion barrier.
15. A method to process a melt comprising:
providing the melt in a crucible, the melt having an exposed surface;
providing heat through the melt to the exposed surface by heating a first side of the crucible opposite the exposed surface with a heater; and
providing within the crucible a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt, wherein the heat diffusion barrier assembly is disposed below the exposed surface, and wherein the heater is disposed to generate in the isolation region a first heat flow density at the exposed surface, and is arranged to generate in the outer region a second heat flow density at the exposed surface, less than the first heat flow density, wherein the heat diffusion barrier assembly comprises a first heat diffusion barrier and second heat diffusion barrier that are angled, wherein the isolation region is wider toward a bottom of the crucible, wherein top portions of the first and second heat diffusion barriers are free and unattached to other structures such that the melt is disposed between the first heat diffusion barrier and the second heat diffusion barrier at a top portion of the diffusion barrier assembly;
wherein the melt is composed of silicon, and wherein a first portion of the heat that flows through the isolation region to the exposed surface has a first heat flow density that is greater than a second heat flow density for a second portion of the heat that flows from the isolation region through the first and second heat diffusion barriers to the outer region.
16. The method of claim 15 , wherein the melt is a silicon melt, and wherein at a top portion of the isolation region a heat flow is 30 W/cm 2 to 40 W/cm 2 .
17. The method of claim 15 , wherein at least one of the first heat diffusion barrier and the second heat diffusion barrier is composed of fused silica.
18. The method of claim 15 , further comprising providing a crucible holder disposed between the heater and crucible and having at least one insulator spacer arranged to generate at least two heating zones that provide heat to the melt.
19. The method of claim 18 , wherein the crucible holder is a heat intensifier.
20. The method of claim 15 , further comprising generating heat flow into the isolation region across a heater width greater than the isolation region width, wherein the heat flow at the surface region is uniform across the isolation region between the first heat diffusion barrier and second heat diffusion barrier.