Semiconductor die having a first light-emitting diode and a second light-emitting diode
The invention describes a semiconductor die comprising at least a first light-emitting diode and a second light-emitting diode, wherein the first light-emitting diode comprises a first diode formed in a first die area and a first phosphor layer deposited over the first die area; the second light-emitting diode comprises a second diode and a second phosphor layer deposited over the second die area; the first diode and the second diode are electrically connected in anti-parallel; and wherein the optical properties of the second phosphor layer differ from the optical properties of the first phosphor layer.
1. A semiconductor die comprising: at least a first light-emitting diode that comprises a first diode in a first die area and a first phosphor layer over the first die area, the first light-emitting diode configured to emit electromagnetic radiation in a first wavelength range; and a second light-emitting diode that comprises a second diode in a second die area and a second phosphor layer over the second die area, the second light-emitting diode configured to emit electromagnetic radiation in a second wavelength range that is different from the first wavelength range by at least 200 nm, the first diode and the second diode being electrically connected in parallel with their polarities reversed, and the second phosphor layer and the first phosphor layer having different compositions.
2. The semiconductor die according to claim 1 , wherein the first diode and the second diode are each a transient-voltage suppressor for the other of the second diode and the first diode.
3. The semiconductor die according to claim 1 , wherein the at least first light-emitting diode emits electromagnetic radiation in a visible spectrum.
4. The semiconductor die according to claim 3 , wherein the first phosphor layer of the at least first light-emitting diode comprises any of YAG:Ce; (Y,Lu)AG:Ce and (Ba,Sr) 2 Si 5 N 8 :Eu (BSSN); Sr[LiAl 3 N 4 ]:Eu 2+ ; Eu-activated Ba—Mg-Aluminate; ZnS:Ag; Sr 3 MgSi 2 O 8 :Eu; Y 3−x Al 5−y Ga y O 12 :Ce x for which 0.002<x<0.12 and 0≤Y≤0.4; Sr 1−x−y Ca y SiAlN 3 :Eux for which 0.001<x<0.03 and 0≤y≤1.
5. The semiconductor die according to claim 1 , wherein both the first light-emitting diode and the second light-emitting diode emit electromagnetic radiation in a visible spectrum.
6. The semiconductor die according to claim 4 , wherein the second light-emitting diode emits electromagnetic radiation in an infrared range.
7. The semiconductor die according to claim 6 , wherein the second phosphor layer of the second light-emitting diode comprises any of RE 3 Ga 5−x−y A x SiO 14 :Cr y (RE=La, Nd, Gd, Yb, Tm; A=Al, Sc), where 0≤x≤1 and 0.005≤y≤0.1; Gd 3−x RE x Sc 2-y-z Ln y Ga 3-w Al w O 12 :Cr z (Ln=Lu, Y, Yb, Tm; RE=La, Nd), where 0≤x≤3; 0≤y≤1.5; 0≤z≤0.3; and 0≤w≤2; AAEM 1−x F 6 :Cr x (A=Li, Cu; AE=Sr, Ca; M=Al, Ga, Sc) where 0.005≤x≤0.2; A 2−x (WO 4 ) 3 :Cr x (A=Al, Ga, Sc, Lu, Yb) where 0.003≤x≤0.5; Sc 1−x−y A x BO 3 :Cr y (A=Ga, Al, In, Lu, Y, Yb) where 0≤x≤1 and 0.005≤y≤0.1.
8. The semiconductor die according to claim 7 , wherein the first light-emitting diode and the second light-emitting diode emit electromagnetic radiation in a red infrared range.
9. The semiconductor die according to claim 1 , wherein the different wavelength ranges differ by at least 250 nm.
10. A method of manufacturing a semiconductor die, comprising: forming a first diode in a first die area and forming a second diode in a second die area such that the first diode and the second diode are connected in parallel with their polarities reversed; depositing a first phosphor layer over the first die area to complete a first light-emitting diode such that the first light-emitting diode is configured to emit electromagnetic radiation in a first wavelength range; and depositing a second phosphor layer over the second die area to complete a second light-emitting diode such that the second light-emitting diode is configured to emit electromagnetic radiation in a second wavelength range different from the first wavelength range by at least 200 nm, and the second phosphor layer and the first phosphor layer having different compositions.
11. The method according to claim 10 , wherein the first die area is formed to comprise at least 50% of a total die area.
12. The method according to claim 10 , further comprising forming a separation layer between the first light-emitting diode and the second light-emitting diode.
13. The method according to claim 10 , wherein the first die area is formed to comprise at least 75% of a total die area.
14. An electronic device comprising: an imaging module that comprises a semiconductor die, the semiconductor die including at least a first light-emitting diode and a second light emitting diode, the first light-emitting diode including a first diode in a first die area and a first phosphor layer over the first die area, and the second light-emitting diode including a second diode in a second die area and a second phosphor layer over the second die area, the first light-emitting diode and the second light-emitting diode configured to emit electromagnetic radiation in wavelength ranges that differ from each other by at least 200 nm, the first diode and the second diode being electrically connected in parallel with their polarities reversed, and the second phosphor layer and the first phosphor layer having different compositions.
15. The electronic device according to claim 14 , wherein the semiconductor die is a part of a camera flash arrangement of the imaging module.