Vertical-cavity surface-emitting laser for near-field illumination of an eye

1. A vertical-cavity surface-emitting laser (VCSEL) for near-field illumination of an eye of a user of a head mounted device, the VCSEL comprising:

a semiconductor substrate;

a first reflector disposed on a first side of the semiconductor substrate;

a mesa region disposed above the first reflector and configured to generate a diverging infrared beam, wherein the mesa region includes:

a second reflector; and

an active region disposed between the first reflector and the second reflector;

a first electrical contact disposed on a second side of the semiconductor substrate, opposite the first side, for electrically coupling to the first reflector;

a second electrical contact disposed on the second side of the semiconductor substrate for electrically coupling to the second reflector; and

a through-hole via for electrically connecting the second electrical contact to the second reflector, wherein the through-hole via extends through the semiconductor substrate, the first reflector, and the active region.

2. The VCSEL of claim 1 , further comprising an isolation layer disposed between the semiconductor substrate and the second electrical contact for electrically insulating the second electrical contact from the first reflector, wherein the through-hole via also extends through the isolation layer.

3. The VCSEL of claim 1 , wherein the VCSEL has a footprint of less than 125 microns by 125 microns.

4. The VCSEL of claim 1 , wherein the VCSEL is configured to generate infrared light for illuminating the eye of the user at distance of less than 25 mm from the eye.

5. The VCSEL of claim 1 , wherein the semiconductor substrate is a thinned semiconductor substrate such that the VCSEL has a total thickness of less than 100 microns.

6. The VCSEL of claim 1 , wherein the VCSEL is configured as a single-mode emitter or a multi-mode emitter.

7. The VCSEL of claim 1 , wherein the mesa region further comprises an aperture definition layer configured to beam shape infrared light generated by the mesa region into the diverging infrared beam.

8. The VCSEL of claim 1 , wherein

the first reflector comprises a first distributed Bragg reflector (DBR); and

the second reflector comprises a second DBR.

9. The VCSEL of claim 8 , wherein

the first DBR comprises an N doped DBR; and

the second DBR comprises a P doped DBR.

10. The VCSEL of claim 1 , further comprising a wafer level optic disposed on the mesa region to direct the diverging infrared beam to illuminate the eye of the user.

11. The VCSEL of claim 10 , wherein the wafer level optic is formed from a high index Gallium arsenide (GaAs).

12. An eye-tracking system of a head mounted device, the eye-tracking system comprising:

a transparent substrate; and

an array of vertical-cavity surface-emitting lasers (VCSELs) disposed on the transparent substrate within a field of view of a user of the head mounted device, wherein each VCSEL comprises:

a semiconductor substrate;

a first reflector disposed on a first side of the semiconductor substrate;

a mesa region disposed above the first reflector and configured to generate a diverging infrared beam for near-field illumination of an eye of the user, wherein the mesa region includes:

a second reflector; and

an active region disposed between the first reflector and the second reflector;

a first electrical contact disposed on a second side of the semiconductor substrate, opposite the first side, for electrically coupling the first reflector to the transparent substrate;

a second electrical contact disposed on the second side of the semiconductor substrate for electrically coupling the second reflector to the transparent substrate; and

a through-hole via for electrically connecting the second electrical contact to the second reflector, wherein the through-hole via extends through the semiconductor substrate, the first reflector, and the active region.

13. The eye-tracking system of claim 12 , wherein each VCSEL further comprises an isolation layer disposed between the semiconductor substrate and the second electrical contact for electrically insulating the second electrical contact from the first reflector, wherein the through-hole via also extends through the isolation layer.

14. The eye-tracking system of claim 12 , wherein each VCSEL has a footprint of less than 125 microns by 125 microns.

15. An eye-tracking system of a head mounted device, the eye-tracking system comprising:

a transparent substrate of a near-eye optical element, the transparent substrate having an emission side and a non-emission side;

an array of vertical-cavity surface-emitting lasers (VCSELs) disposed on the non-emission side of the transparent substrate within a field of view of a user of the head mounted device, wherein each VCSEL comprises:

a semiconductor structure configured to generate a diverging infrared beam through the transparent substrate to the emission side of the transparent substrate for near-field illumination of an eye of the user, wherein the semiconductor structure includes a wafer level optic, formed from a high index Gallium arsenide (GaAs), to direct the diverging infrared beam to illuminate the eye of the user;

a first electrical contact disposed on the semiconductor structure for electrically coupling the semiconductor structure to the non-emission side of the transparent substrate; and

a second electrical contact disposed on the semiconductor structure for electrically coupling the semiconductor structure to the non-emission side of the transparent substrate.

16. The eye-tracking system of claim 15 , wherein each VCSEL has a total thickness of less than 100 microns.

17. The eye-tracking system of claim 15 , wherein each VCSEL has a footprint of less than 125 microns by 125 microns.