IP Library Granted Patent US 11,865,672
Granted Patent B1
US 11,865,672 · App. 16/518,049 · Granted Jan 9, 2024

Polycrystalline diamond compacts, methods of fabricating the same, and methods of using the same

Inventors: Daniel Call Mortensen (Eagle Mountain, UT); Lindsay Sue Patton (Provo, UT); Trevor Allen Olsen (Spanish Fork, UT); Casey Wade Swan (Spanish Fork, UT); Shawn Casey Scott (Payson, UT); Matthew Kimball Baker (Provo, UT); Anne-Grethe Slotnaes (South Jordan, UT); Kenneth E. Bertagnolli (Riverton, UT); Jiang Qian (Cedar Hills, UT); Jason Lott (Payson, UT); Joshua Adam Hawks (Saratoga Springs, UT)
Assignee: US Synthetic Corporation
B24D3/007B24D3/10C22C1/04C22C1/05C22C1/051E21B10/55E21B10/5673E21B10/62E21B10/633
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Quick Facts
Patent No.
US 11,865,672
App. No.
16/518,049
Granted
Jan 9, 2024
Kind
B1
Abstract

PDCs, methods of fabricating the PDCs, and methods of using the PDCs are disclosed herein. The PDCs include a PCD table bonded to a substrate. The PCD table includes an upper surface having a plurality of recessed features formed therein. The plurality of recessed features are configured to attract at least some cracks that form in the PCD table. As such, the plurality of recessed features limit or prevent crack propagation into other portions of the PCD table and limit a volume of the PCD table that spalls. Methods of fabricating the PDCs include partially leaching the PCD table and, after leaching the PCD table, forming the plurality of recessed features in the upper surface thereof. Method of using the PDCs include rotating a PDC that has spalled relative to a rotary drill bit such that a portion of the upper surface of the PDC that has not spalled forms a cutting surface thereof.

Claims (34)

1. A method of fabricating a polycrystalline diamond compact, the method comprising:

leaching at least a portion of at least one interstitial constituent from a polycrystalline diamond table to a leach depth measured inwardly from an upper surface and to a lateral leach depth measured inwardly from at least one lateral surface of the polycrystalline diamond table to form a leached region, the leach depth being less than a depth of the polycrystalline diamond table to produce an unleached region;

after leaching the polycrystalline diamond table, forming a plurality of recessed features that extend from the upper surface of the polycrystalline diamond table to a depth less than the leach depth of the leached region such that the plurality of recessed features are entirely contained within the leached region and do not extend into the unleached region of the polycrystalline diamond table; and

forming at least a portion of one recessed feature of the plurality of recessed features proximate to an anticipated leach boundary-wear intersection location;

wherein forming the plurality of recessed features forms a plurality of cells on the upper surface that are at least partially defined by the plurality of recessed features.

2. The method of claim 1 , wherein forming a plurality of recessed features includes forming the plurality of recessed features using at least one of a laser, electrical discharge machining, a water jet, or grinding.

3. The method of claim 1 , wherein the leached region exhibits a first leach depth measured from the upper surface and a second leach depth measured from a base of each of the plurality of recessed features that is less than the first leach depth.

4. The method of claim 3 , wherein leaching at least a portion of at least one interstitial constituent from a polycrystalline diamond table includes leaching the polycrystalline diamond table until the first leach depth is about 200 μm to about 900 μm.

5. The method of claim 3 , wherein forming a plurality of recessed features includes forming the plurality of recessed features to exhibit the second leach depth that is about 1% to about 75% less than the first leach depth.

6. The method of claim 1 , wherein forming a plurality of recessed features includes forming the plurality of recessed features using acid etching or plasma etching.

7. The method of claim 1 , wherein forming a plurality of recessed features includes forming at least one of the plurality of the plurality of recessed features to exhibit a depth measured from the upper surface to a base thereof that is different from at least one other of the plurality of recessed features.

8. The method of claim 1 , wherein forming a plurality of recessed features includes forming at least one of the plurality of recessed features to exhibit a depth measured from the upper surface to a base thereof that is about 50 μm to about 500 μm.

9. The method of claim 1 , wherein one or more of the plurality of recessed features exhibit an average maximum width and an average maximum depth, the average maximum depth is greater than or equal to the average maximum width.

10. The method of claim 9 , wherein forming a plurality of recessed features includes forming the one or more of the plurality of recessed features to exhibit a ratio of the average maximum depth to the average maximum width of about 1.5 to about 3.

11. The method of claim 1 , wherein forming a plurality of recessed features includes forming at least a plurality of substantially parallel recesses that are spaced from each other by a distance that is less than 650 μm.

12. The method of claim 1 , wherein forming a plurality of recessed features includes forming at least some of the plurality of recessed features in at least one of a hypocycloid or hypotrochoid shape.

13. The method of claim 1 , wherein forming the plurality of recessed features includes forming at least some of the plurality of recessed features in a triangular grid-like pattern, a rectangular grid-like pattern, or a hexagonal grid-like pattern.

14. The method of claim 1 , wherein forming a plurality of recessed features includes forming the plurality of recessed features to exhibit, in side view, at least one of a generally arcuate cross-section, a generally triangular cross-section, or a generally rectangular cross-section.

15. The method of claim 1 , wherein forming a plurality of recessed features includes forming a plurality of cells at least partially defined by at least one of the plurality of recessed features, an average a surface area of each of the plurality of cells is 5% of a total surface area of the upper surface or less.

16. A method of fabricating a polycrystalline diamond compact, the method comprising:

leaching at least a portion of at least one interstitial constituent from a polycrystalline diamond table to a leach depth measured inwardly from an upper surface and to a lateral leach depth measured inwardly from at least one lateral surface of the polycrystalline diamond table to form a leached region, the leach depth being less than a depth of the polycrystalline diamond table to produce an unleached region;

after leaching the polycrystalline diamond table, forming a plurality of recessed features that extend from the upper surface of the polycrystalline diamond table to a depth less than the leach depth of the leached region using at least one of etching, a laser machining, electrical discharge machining, a water jet machining, or grinding, one or more of the plurality of recessed features exhibiting an average maximum width and an average maximum depth, the average maximum depth is greater than or equal to the average maximum width, wherein the plurality of recessed features exhibit, in side view, at least one of a generally arcuate cross-section, a generally triangular cross-section, or a generally rectangular cross-section; and

forming at least a portion of one recessed feature of the plurality of recessed features proximate to an expected wear front that intersects with an interface between the unleached region and the leached region;

wherein forming the plurality of recessed features forms a plurality of cells on the upper surface that are at least partially defined by the plurality of recessed features; and

wherein the leached region exhibits a first leach depth measured from the upper surface and a second leach depth measure from a base of each of the plurality of recessed features that is about 1% to about 75% less than the first leach depth.

17. A method of fabricating a polycrystalline diamond compact, the method comprising:

leaching at least a portion of at least one interstitial constituent from a polycrystalline diamond table to a leach depth measured inwardly from an upper surface to form a leached region;

maintaining an unleached region in the polycrystalline diamond table;

after leaching the polycrystalline diamond table, forming a plurality of recessed features that extend from the upper surface of the polycrystalline diamond table to a depth less than the leach depth of the leached region;

forming at least a portion of one recessed feature of the plurality of recessed features proximate to an expected wear front and proximate to an interface between the unleached region and the leached region; and

at least partially defining a plurality of cells on the upper surface with the plurality of recessed features.

18. The method of claim 17 , further comprising locating the plurality of recessed features entirely within the leached region.

19. The method of claim 17 , further comprising restricting the depth the plurality of recessed features to a location spaced from the unleached region.

20. The method of claim 17 , further comprising extending the depth the plurality of recessed features to a location short of the interface between the unleached region and the leached region in the polycrystalline diamond table.

Assignments (7)
SECURITY INTEREST Recorded Jul 18, 2025
From: US SYNTHETIC CORPORATION
To: KEYBANK NATIONAL ASSOCIATION
Reel/Frame 074973/0089 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 23, 2025
From: MORTENSEN, DANIEL CALL; PATTON, LINDSAY SUE; OLSEN, TREVOR ALLEN; SWAN, CASEY WADE; SCOTT, SHAWN CASEY; BAKER, MATTHEW KIMBALL; SLOTNAES, ANNE-GRETHE; BERTAGNOLLI, KENNETH E.; QIAN, JIANG; LOTT, JASON; HAWKS, JOSHUA ADAM
To: US SYNTHETIC CORPORATION
Reel/Frame 071210/0967 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2025
From: MORTENSEN, DANIEL CALL; PATTON, LINDSEY SUE; OLSEN, TREVOR ALLEN; SWAN, CASEY WADE; SCOTT, SHAWN CASEY; BAKER, MATTHEW KIMBALL; SLOTNAES, ANNE-GRETHE; BERTAGNOLLI, KENNETH E.; QIAN, JIANG; LOTT, JASON; HAWKS, JOSHUA ADAM
To: US SYNTHETIC CORPORATION
Reel/Frame 070501/0518 →
RELEASE OF SECURITY INTEREST Recorded Jun 7, 2022
From: BANK OF AMERICA, N.A.
To: ACE DOWNHOLE, LLC; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; APERGY BMCS ACQUISITION CORP.; NORRISEAL-WELLMARK, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
Reel/Frame 060305/0001 →
SECURITY INTEREST Recorded Jun 5, 2020
From: ACE DOWNHOLE, LLC; APERGY BMCS ACQUISITION CORP.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053790/0001 →
SECURITY AGREEMENT Recorded Nov 6, 2019
From: APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 050941/0695 →