Sb—Te-based alloy sintered compact sputtering target
An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.
1. An Sb—Te-based alloy sputtering target having a composition containing Sb and Te as main constituent elements thereof and carbon or boron in an amount of more than 10 at % and equal to or less than 30 at %, having a relative density of 97.85% or more, and having an average deflective strength of 100 MPa or higher, wherein the Sb—Te-based alloy sputtering target has a uniform structure comprising grains of an Sb—Te-based alloy phase and a uniform dispersion of grains of the carbon or boron, the grains of the Sb—Te-based alloy phase have an average size of 3 μm or less and a standard deviation of less than 1.00, the grains of the carbon or boron have an average size of 0.5 μm or less and a standard deviation of less than 0.20, and, for the average size of the grains of the Sb—Te-based alloy phase expressed by X and the average size of the grains of the carbon or boron expressed by Y, a ratio Y/X is within a range of from 0.213 to 0.5.
2. The Sb—Te-based alloy sputtering target according to claim 1 , containing one or more elements selected from the group consisting of Ag, In, Si, Ge, Ga, Ti, Au, Pt, and Pd in a total amount of 30 at % or less.
3. The Sb—Te-based alloy sputtering target according to claim 2 , wherein the Sb—Te alloy sputtering target is an Ag—In—Sb—Te alloy or Ge—Sb—Te alloy sputtering target containing carbon or boron.
4. The Sb—Te-based alloy sputtering target according to claim 1 , wherein the Sb—Te alloy sputtering target is an Ag—In—Sb—Te alloy or Ge—Sb—Te alloy sputtering target containing carbon or boron.
5. The Sb—Te-based alloy sputtering target according to claim 1 , wherein the amount of carbon or boron contained in the target is 15 to 30 at %.
6. The Sb—Te-based alloy sputtering target according to claim 1 , wherein the composition contains carbon in an amount of 15 to 30 at %.
7. The Sb—Te-based alloy sputtering target according to claim 1 , wherein the relative density is 97.85% to 99.99%.
8. The Sb—Te-based alloy sputtering target according to claim 1 , wherein the grains of the Sb—Te-based alloy phase are jet mill pulverized grains.