Nitride crystal
An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by In x Al y Ga 1-x-y N (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1), and the concentration of B in the crystal is less than 1×10 15 at/cm 3 , and each of the concentrations of O and C in the crystal is less than 1×10 15 at/cm 3 in a region of 60% or more of a main surface.
1. A nitride crystal
in which a composition formula is represented by
In x Al y Ga 1-x-y N (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1), and
a concentration of B in the crystal is less than 1×10 15 at/cm 3 , and
an in-plane distribution of each of the concentrations of O and C in a main surface of the crystal is less than 1×10 15 at/cm 3 in a region of 60% or more of the main surface of the crystal, wherein the main surface of the crystal is +c-plane of the nitride crystal.
2. The nitride crystal according to claim 1 , wherein each of the concentrations of Si and Fe in the crystal is less than 1×10 15 at/cm 3 .
3. The nitride crystal according to claim 2 , wherein electric resistivity is 1×10 6 Ωcm or more under a temperature condition of 20° C. or more and 300° C. or less.
4. The nitride crystal according to claim 2 , wherein electric resistivity is 1×10 2 Ωcm or less under a temperature condition of 20° C. or more and 300° C. or less.
5. The nitride crystal according to claim 1 , wherein the concentration of Si is less than 1×10 15 at/cm 3 and the concentration of Fe is 1×10 16 at/cm 3 or more.
6. The nitride crystal according to claim 5 , wherein electric resistivity is 1×10 7 Ω cm or more under a temperature condition of 20° C. or more and 300° C. or less.
7. The nitride crystal according to claim 1 , wherein the concentration of Fe is less than 1×10 15 at/cm 3 and the concentration of Si or Ge or the total concentration of Si and Ge is 1×10 15 at/cm 3 or more in the crystal.
8. The nitride crystal according to claim 7 , wherein electric resistivity is 1×10 2 Ωcm or less under a temperature condition of 20° C. or more and 300° C. or less.
9. The nitride crystal according to claim 7 , wherein the concentration of Mg in the crystal is 1×10 17 at/cm 3 or more.
10. The nitride crystal according to claim 9 ,
wherein electric resistivity is 1×10 2 Ωcm or less under a temperature condition of 20° C. or more and 300° C. or less.
11. The nitride crystal according to claim 1 ,
wherein each of the concentrations of O and C in the crystal is less than 5×10 14 at/cm 3 in a region of 60% or more of the main surface of the crystal.
12. The nitride crystal according to claim 1 ,
wherein the concentration of O in the crystal is less than 5×10 14 at/cm 3 in a region of 60% or more of the main surface of the crystal, and
the concentration of C in the crystal is less than 1×10 14 at/cm 3 in a region of 60% or more of the main surface of the crystal.