Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
A method and apparatus for use in a digitally tuning a capacitor in an integrated circuit device is described. A Digitally Tuned Capacitor DTC is described which facilitates digitally controlling capacitance applied between a first and second terminal. In some embodiments, the first terminal comprises an RF+ terminal and the second terminal comprises an RF− terminal. In accordance with some embodiments, the DTCs comprise a plurality of sub-circuits ordered in significance from least significant bit (LSB) to most significant bit (MSB) sub-circuits, wherein the plurality of significant bit sub-circuits are coupled together in parallel, and wherein each sub-circuit has a first node coupled to the first RF terminal, and a second node coupled to the second RF terminal. The DTCs further include an input means for receiving a digital control word, wherein the digital control word comprises bits that are similarly ordered in significance from an LSB to an MSB.
1. A module comprising at least one integrated circuit chip, wherein
i) the at least one integrated circuit chip is incorporated into the module and includes:
a first node;
a second node; and
a series arrangement of one or more capacitive elements and two or more stacked switches coupled between the first node and the second node;
ii) the two or more stacked switches are configured to withstand a voltage greater than a voltage withstood by one switch;
iii) each of the two or more stacked switches has a control node connectable to a control signal via a resistive element;
iv) the control signal is configured to enable or disable the two or more stacked switches, thereby adjusting the capacitance between the first node and the second node,
v) the two or more stacked switches are stacked SOI MOSFET switches, and
vi) the one or more capacitive elements have capacitance values assigned according to a capacitance weighting scheme and the two or more stacked switches have switch sizes assigned according to a switch size weighting scheme, the switch size weighting scheme being a function of the capacitance weighting scheme.
2. The module of claim 1 , wherein a capacitive element of the one or more capacitive elements connects a top switch of the two or more stacked switches to the first node, the top switch being the closest switch to the first node and the farthest switch from the second node.
3. The module of claim 1 , wherein the two or more stacked SOI MOSFET switches are consecutively stacked one on each other without capacitive elements between the SOI MOSFET switches and all of the one or more capacitive elements are arranged above a top switch of the SOI MOSFET switches between the top switch and the first node.
4. The module of claim 1 , wherein a capacitive element of the one or more capacitive elements connects a drain or source of a top SOI MOSFET switch of the two or more stacked SOI MOSFET switches to the first node.
5. The module of claim 2 , wherein the capacitive element comprises one or more capacitors.
6. The module of claim 1 , wherein the switch size weighting scheme is same as the capacitance weighting scheme.
7. The module of claim 2 , wherein the second node is coupled to ground.
8. A communication device comprising: at least one integrated circuit chip; wherein
i) the at least one integrated circuit chip is incorporated into the communication device and further includes:
a first node;
a second node; and
a series arrangement of one or more capacitive elements and two or more stacked switches coupled between the first node and the second node;
ii) the two or more stacked switches are configured to withstand a voltage greater than a voltage withstood by one switch;
iii) each of the two or more stacked switches has a control node connected to a control signal via a resistive element,
iv) the control signal is configured to enable or disable the two or more stacked switches and thereby adjusting the capacitance between the first node and the second node,
v) the two or more stacked switches are stacked SOI MOSFET switches, and
vi) the one or more capacitive elements have capacitance values assigned according to a capacitance weighting scheme and the two or more stacked switches have switch sizes assigned according to a switch size weighting scheme, the switch size weighting scheme being a function of the capacitance weighting scheme.
9. The communication device of claim 8 , wherein a capacitive element of the one or more capacitive elements connects a top switch of the two or more stacked switches to the first node, the top switch being the closest switch to the first node and the farthest switch from the second node.
10. The communication device of claim 8 , wherein the two or more stacked SOI MOSFET switches are consecutively stacked one on each other without capacitive elements between the SOI MOSFET switches and all of the one or more capacitive elements are arranged above a top switch of the SOI MOSFET switches between the top switch and the first node.
11. The communication device of claim 8 , wherein a capacitive element of the one or more capacitive elements connects a drain or source of a top SOI MOSFET switch of the two or more stacked SOI MOSFET switches to the first node.
12. The communication device of claim 9 , wherein the capacitive element comprises one or more capacitors.
13. The communication device of claim 8 , wherein the switch size weighting scheme is same as the capacitance weighting scheme.
14. An RF front-end comprising: at least one integrated circuit chip and other RF front-end components; wherein:
i) the at least one integrated circuit chip and other RF front-end components are incorporated into the RF front-end, the at least one integrated circuit chip further includes:
a first node;
a second node;
a series arrangement of one or more capacitive elements and two or more stacked switches coupled between the first node and the second node;
ii) the two or more stacked switches are configured to withstand a voltage greater than a voltage withstood by one switch;
iii) each of the two or more stacked switches has a control node connected to a control signal via a resistive element,
iv) the control signal is configured to enable or disable the two or more stacked switches and thereby adjusting the capacitance between the first node and the second node,
v) the two or more stacked switches are stacked SOI MOSFET switches, and
vi) the one or more capacitive elements have capacitance values assigned according to a capacitance weighting scheme and the two or more stacked switches have switch sizes assigned according to a switch size weighting scheme, the switch size weighting scheme being a function of the capacitance weighting scheme.
15. The RF front-end of claim 14 , wherein a capacitive element of the one or more capacitive elements connects a top switch of the two or more stacked switches to the first node, the top switch being the closest switch to the first node and the farthest switch from the second node.
16. The RF front-end of claim 15 , wherein the two or more stacked SOI MOSFET switches are consecutively stacked one on each other without capacitive elements between the SOI MOSFET switches and all of the one or more capacitive elements are arranged above a top switch of the SOI MOSFET switches between the top switch and the first node.
17. The RF front-end of claim 14 , wherein a capacitive element of the one or more capacitive elements connects a drain or source of a top SOI MOSFET switch of the two or more stacked SOI MOSFET switches to the first node.
18. The RF front-end of claim 15 , wherein the capacitive element comprises one or more capacitors.
19. The RF front-end of claim 14 , wherein the switch size weighting scheme is same as the capacitance weighting scheme.
20. The RF front-end of claim 15 , wherein the second node is coupled to ground.