Ejector device
An ejector device that includes one or more ejectors comprises an ejector layer that spans at least one hollow area. The ejector layer has a first surface and an opposing second surface arranged to receive a viscous material with viscosity between 20 and 50,000 centipoise. The ejector layer includes a radiation absorber material configured to thermally expand without phase transition in response to heating by activation radiation transmitted to the first surface. Thermal expansion of the ejector layer causes displacement of the ejector layer and ejection of the material from the second surface of the ejector layer.
1. A method, comprising:
depositing a base layer on a substrate;
patterning the base layer to form at least one sacrificial region;
conformally coating the sacrificial region with an ejector layer; and
etching the sacrificial region to form an ejector mesa comprising the ejector layer spanning a hollow area, wherein the ejector layer is configured to thermally expand without phase transition in response to heating by activation radiation, the thermal expansion of the ejector layer sufficient to cause ejection of a droplet of viscous material from the ejector layer; and wherein the ejector layer comprises multiple layers including a first layer having a first coefficient of thermal expansion, CTE1, and a second layer having a second coefficient of thermal expansion, CTE2, wherein CTE2>CTE1.
2. The method of claim 1 , wherein patterning the base layer comprises depositing a photoresist material on the base layer.
3. The method of claim 2 , further comprising:
irradiating the photoresist through a patterned mask; and
etching non-irradiated portions of the photoresist material.
4. The method of claim 3 , further comprising before conformally coating the sacrificial region with the ejector layer, forming a pinhole in a portion of the irradiated photoresist material and etching a portion of the sacrificial region through the pinhole, the etched portion of the sacrificial region having a convex surface.
5. The method of claim 4 , wherein etching the sacrificial region to form an ejector mesa comprises etching the sacrificial region to form a convex ejector mesa.
6. The method of claim 1 , wherein depositing the base layer on the substrate comprises depositing a first base layer on the substrate and depositing a second base layer on the first base layer.
7. The method of claim 1 , wherein patterning the base layer comprises patterning the first base layer into a first pattern and patterning the second base layer into a second pattern.
8. The method of claim 7 , wherein the first pattern is different than the second pattern.
9. The method of claim 7 , wherein patterning the first base layer and the second base layer comprises selectively etching the first base layer and the second base layer.
10. The method of claim 9 , further comprising selectively etching the second base layer to form the second pattern before selectively etching the first base layer to form the first pattern.
11. The method of claim 1 , further comprising forming one or more vias through the substrate, wherein etching the sacrificial mesa comprises etching the sacrificial mesa through the one or more vias.
12. The method of claim 1 , wherein patterning the base layer comprises using one or more of flexography and lithography.
13. A method, comprising:
depositing a base layer on a substrate;
depositing a photoresist material on the base layer;
irradiating the photoresist through a patterned mask; etching non-irradiated portions of the photoresist material and the base layer at least one sacrificial region; conformally coating the sacrificial region with an ejector layer; and etching the sacrificial region to form an ejector mesa comprising the ejector layer spanning a hollow area, wherein the ejector layer is configured to thermally expand without phase transition in response to heating by activation radiation, the thermal expansion of the ejector layer sufficient to cause ejection of a droplet of viscous material from the ejector layer; and wherein the ejector layer comprises multiple layers including a first layer having a first coefficient of thermal expansion, CTE1, and a second layer having a second coefficient of thermal expansion, CTE2, wherein CTE2>CTE1.
14. The method of claim 13 , further comprising before conformally coating the sacrificial region with the ejector layer, forming a pinhole in a portion of the irradiated photoresist material and etching a portion of the sacrificial region through the pinhole, the etched portion of the sacrificial region having a convex surface.
15. The method of claim 14 , wherein etching the sacrificial region to form an ejector mesa comprises etching the sacrificial region to form a convex ejector mesa.
16. The method of claim 13 , wherein depositing the base layer on the substrate comprises depositing a first base layer on the substrate and depositing a second base layer on the first base layer.
17. The method of claim 13 , wherein patterning the base layer comprises patterning the first base layer into a first pattern and patterning the second base layer into a second pattern.
18. The method of claim 17 , wherein the first pattern is different than the second pattern.
19. The method of claim 17 , wherein patterning the first base layer and the second base layer comprises selectively etching the first base layer and the second base layer.
20. The method of claim 13 , further comprising forming one or more vias through the substrate, wherein etching the sacrificial mesa comprises etching the sacrificial mesa through the one or more vias.