IP Library › Patent Application 16526018
Patent Application
App. No. 16/526,018

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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Quick Facts
Patent No.
US None
App. No.
16/526,018
Abstract

An upper surface of a plug (PL 1 ) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate ( 1 S), completing a CMP method for forming the plug (PL 1 ) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL 1 ) and a wiring (W 1 ) in a vertical direction can be ensured. Also, the wiring (W 1 ) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

Claims (7)

1 . A semiconductor device comprising:

a first interlayer insulating film formed on a semiconductor substrate;

a first plug formed inside the first interlayer insulating film;

a second interlayer insulating film formed on the first interlayer insulating film and having a dielectric constant lower than a dielectric constant of silicon oxide; and

a first buried wiring formed inside the second interlayer insulating film and connected to the first plug,

an upper surface of the first plug being formed at a position higher than an upper surface of the first interlayer insulating film, and

a lower surface of the first buried wiring being formed at a position lower than the upper surface of the first plug.