Laser diode drive method and arrangement
A method and apparatus to drive a laser diode are disclosed comprising increasing a bias current to the laser diode to a threshold level, wherein the threshold level is below an actuation level of the laser diode and wherein a resistor is placed in parallel to the laser diode, charging a capacitance to a precharge capacitance of a circuit including the laser diode, wherein the precharge capacitance is below a capacitance actuation level of the laser diode; and actuating the laser diode.
1. A method to drive a laser diode, comprising:
increasing a bias current to the laser diode to a threshold level, wherein the threshold level is below an actuation level of the laser diode and wherein a resistor is placed in parallel to the laser diode;
charging a capacitance to a precharge capacitance of a circuit including the laser diode, wherein the precharge capacitance is below a capacitance actuation level of the laser diode; and
actuating the laser diode.
2. The method according to claim 1 , wherein the increasing the bias current to the laser diode is performed by providing a single amplitude pulse of current to the laser diode.
3. The method according to claim 1 , wherein the increasing the bias current to the laser diode is performed by providing a burst of amplitude pulses to laser pulses.
4. The method according to claim 1 , wherein increasing the bias current to the laser diode is through an adjustable voltage source.
5. The method according to claim 4 , wherein the adjustable voltage source is controlled through an analog switch.
6. The method according to claim 1 , wherein the increasing the bias current to the laser diode to the threshold level is through sweeping a current from a zero level to the threshold level.
7. A method to drive a laser diode, comprising:
increasing a bias current to the laser diode in a series of pulses to a threshold level, wherein the threshold level is below an actuation level of the laser diode and wherein a resistor is placed in parallel to the laser diode and wherein the series of pulses are greater in frequency than a laser diode current discharge rate;
charging a capacitance to a precharge capacitance of a circuit including the laser diode, wherein the precharge capacitance is below a capacitance actuation level of the laser diode; and
actuating the laser diode.
8. The method according to claim 7 , wherein increasing the bias current to the laser diode is through an adjustable voltage source.
9. The method according to claim 8 , wherein the adjustable voltage source is controlled through an analog switch.
10. The method according to claim 7 , wherein the increasing the bias current to the laser diode to the threshold level is through sweeping a current from a zero level to the threshold level.
11. An arrangement for providing a current to an apparatus, comprising:
a diode;
a resistor placed in parallel to the diode;
at least two transistors, wherein each transistor has a collector, an emitter and a base, and each collector is connected to the diode;
at least one operational amplifier connected to each base of the at least two transistors;
a direct current power supply connected to the at least one operational amplifier; and
at least one direct current power supply connected to each of the emitters of the at least two transistors.
12. The arrangement according to claim 11 , further comprising:
at least one capacitor placed in parallel to the at least one operational amplifier.
13. The arrangement according to claim 11 , wherein the at least two transistors is a first transistor and a second transistor.
14. The arrangement according to claim 13 , further comprising:
at least two resistors positioned in between the emitters of the first transistor and the second transistor and the at least one direct current power supply connected to each of the emitters.
15. The arrangement according to claim 14 , wherein the at least two resistors is a first resistor and a second resistor.
16. The arrangement according to claim 15 , wherein the first resistor has a higher resistive value than the second resistor.
17. The arrangement according to claim 14 , further comprising:
at least one resistor placed between the emitters of the first transistor and the second transistor and ground.
18. The arrangement according to claim 17 , wherein the diode is a laser diode.
19. The arrangement according to claim 13 , further comprising:
at least one capacitor positioned in between the emitters of the first transistor and the second transistor.
20. The arrangement according to claim 11 , wherein the diode is a laser diode.